GS8182D18BD-400I

GS8182D18BD-400I
Mfr. #:
GS8182D18BD-400I
制造商:
GSI Technology
描述:
SRAM 1.8 or 1.5V 1M x 18 18M
生命周期:
制造商新产品。
数据表:
GS8182D18BD-400I 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
GS8182D18BD-400I 更多信息
产品属性
属性值
制造商:
GSI技术
产品分类:
静态随机存取存储器
内存大小:
18 Mbit
组织:
1 M x 18
最大时钟频率:
400 MHz
接口类型:
平行线
电源电压 - 最大值:
1.9 V
电源电压 - 最小值:
1.7 V
电源电流 - 最大值:
730 mA
最低工作温度:
- 40 C
最高工作温度:
+ 85 C
安装方式:
贴片/贴片
包装/案例:
BGA-165
打包:
托盘
内存类型:
QDR-II
系列:
GS8182D18BD
类型:
SigmaQuad-II
品牌:
GSI技术
湿气敏感:
是的
产品类别:
静态随机存取存储器
出厂包装数量:
18
子类别:
内存和数据存储
商品名:
SigmaQuad-II
Tags
GS8182D18BD, GS8182D18B, GS8182D18, GS8182D1, GS8182D, GS8182, GS818, GS81, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    A***v
    A***v
    RU

    Ok! Got it. Shipping was not tracked. Ordered 19 jan 19 received 14 mar 19

    2019-03-13
    N***v
    N***v
    RU

    Got it. Thank you.

    2019-04-25
***et Europe
SRAM Chip Sync Dual 1.8V 18M-Bit 1M x 18 0.45ns 165-Pin FBGA Tray
***S
French Electronic Distributor since 1988
***ure Electronics
CY7C1314KV18 Series 18 Mb (512 K x 36) 1.9 V 250 MHz SMT SRAM - FBGA-165
***et
SRAM Chip Sync Dual 1.8V 18M-Bit 512K x 36 0.45ns 165-Pin FBGA Tray
***ponent Stockers USA
512K X 36 QDR SRAM 0.45 ns PBGA165
***ress Semiconductor SCT
Synchronous SRAM, BGA-165, RoHS
***or
QDR SRAM, 512KX36, 0.45NS PBGA16
***DA Technology Co., Ltd.
Product Description Demo for Development.
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***ure Electronics
CY7C1313CV18 18 Mb (2M x 8) 250 MHz 1.8 V QDR™-II 4-Word Burst SRAM -FBGA-165
***et
SRAM Chip Sync Dual 1.8V 18M-Bit 1M x 18 0.45ns 165-Pin FBGA Tray
***ponent Stockers USA
1M X 18 QDR SRAM 0.45 ns PBGA165
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***ure Electronics
SRAM - Synchronous, QDR II+ Memory IC 18Mb (1M x 18) Parallel 450MHz 165-FBGA
***et
SRAM Chip Sync Dual 1.8V 18M-Bit 1M x 18 0.45ns 165-Pin FBGA Tray
***ponent Stockers USA
1M X 18 QDR SRAM 0.45 ns PBGA165
***ress Semiconductor SCT
Synchronous SRAM, BGA-165, RoHS
***DA Technology Co., Ltd.
Product Description Demo for Development.
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***et
SRAM Chip Sync Single 1.8V 18M-Bit 512K x 36 0.45ns 165-Pin LFBGA
***i-Key
IC SRAM 18MBIT PARALLEL 165LFBGA
***et
SRAM Chip Sync Single 1.8V 18M-Bit 1M x 18 0.45ns 165-Pin LFBGA
***I SCT
1Mx18, 250Mhz, SRAM, FBGA-165
***i-Key
IC SRAM 18MBIT PARALLEL 165LFBGA
***enic
LFBGA-165(15x17) SRAM ROHS
Quad SRAMs
GSI Technology Quad SRAMs combine capacity and performance with the ability to transfer 4 beats of data (2 beats per data bus) in a single clock cycle. SigmaQuad SRAMs are synchronous memories that have separate read and write data buses with transaction rates unequaled by any competitors.
型号 制造商 描述 库存 价格
GS8182D18BD-400I
DISTI # GS8182D18BD-400I
GSI TechnologySRAM Chip Sync Dual 1.8V 18M-Bit 1M x 18 0.45ns 165-Pin FBGA Tray - Trays (Alt: GS8182D18BD-400I)
RoHS: Not Compliant
Min Qty: 18
Container: Tray
Americas - 0
  • 18:$52.2900
  • 36:$48.4900
  • 72:$45.1900
  • 108:$42.1900
  • 180:$40.8900
GS8182D18BD-400I
DISTI # 464-GS8182D18BD-400I
GSI TechnologySRAM 1.8 or 1.5V 1M x 18 18M0
  • 1:$44.0000
  • 25:$40.8600
图片 型号 描述
GS8182D19BGD-333

Mfr.#: GS8182D19BGD-333

OMO.#: OMO-GS8182D19BGD-333

SRAM 1.8 or 1.5V 1M x 18 18M
GS8182D18BD-200I

Mfr.#: GS8182D18BD-200I

OMO.#: OMO-GS8182D18BD-200I

SRAM 1.8 or 1.5V 1M x 18 18M
GS8182D18BD-200

Mfr.#: GS8182D18BD-200

OMO.#: OMO-GS8182D18BD-200

SRAM 1.8 or 1.5V 1M x 18 18M
GS8182D19BD-300I

Mfr.#: GS8182D19BD-300I

OMO.#: OMO-GS8182D19BD-300I

SRAM 1.8 or 1.5V 1M x 18 18M
GS8182D19BGD-375

Mfr.#: GS8182D19BGD-375

OMO.#: OMO-GS8182D19BGD-375

SRAM 1.8 or 1.5V 1M x 18 18M
GS8182D18BD-300I

Mfr.#: GS8182D18BD-300I

OMO.#: OMO-GS8182D18BD-300I

SRAM 1.8 or 1.5V 1M x 18 18M
GS8182D19BD-375I

Mfr.#: GS8182D19BD-375I

OMO.#: OMO-GS8182D19BD-375I

SRAM 1.8 or 1.5V 1M x 18 18M
GS8182D19BD-400I

Mfr.#: GS8182D19BD-400I

OMO.#: OMO-GS8182D19BD-400I

SRAM 1.8 or 1.5V 1M x 18 18M
GS8182D18BGD-375I

Mfr.#: GS8182D18BGD-375I

OMO.#: OMO-GS8182D18BGD-375I

SRAM 1.8 or 1.5V 1M x 18 18M
GS8182D19BD-435

Mfr.#: GS8182D19BD-435

OMO.#: OMO-GS8182D19BD-435

SRAM 1.8 or 1.5V 1M x 18 18M
可用性
库存:
Available
订购:
1000
输入数量:
GS8182D18BD-400I的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$44.00
US$44.00
25
US$40.86
US$1 021.50
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
从...开始
最新产品
  • High-Temperature FASTON Housings
    TE Connectivity's FASTON terminals and connectors are a high quality, high temperature rated flag house that fully encloses the terminal.
  • 8462 Silicone Grease
    MG Chemicals' 8462 silicone grease is a water repelling, non-melting, and lubricating dielectric grease that provides superior corrosion and arcing resistance for connectors.
  • LGA 3647 Socket and Hardware
    TE Connectivity’s LGA 3647 socket and hardware meet the next-generation designs for Intel- and AMD-based LAG microprocessor packages for server, storage, data center, and high-performance computin
  • Compare GS8182D18BD-400I
    GS8182D18BD167 vs GS8182D18BD167I vs GS8182D18BD200
  • Super Duster™ 134 Aerosol Dusters
    MG Chemicals' Super Duster™ 134 non-flammable aerosol dusters remove microscopic dust, lint, and foreign particles from electro-mechanical instruments.
  • 15.0 mm High Power Terminal Block
    TE Connectivity AMP's high power terminal blocks are compact size, provide high current capacity, and are available in multiple positions.
Top