IXFN27N80Q

IXFN27N80Q
Mfr. #:
IXFN27N80Q
制造商:
Littelfuse
描述:
MOSFET 27 Amps 800V 0.32 Rds
生命周期:
制造商新产品。
数据表:
IXFN27N80Q 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
产品属性
属性值
制造商
IXYS
产品分类
模块
系列
IXFN27N80
打包
管子
单位重量
38 g
安装方式
贴片/贴片
商品名
超场效应晶体管
技术
通道数
1 Channel
配置
单双源
包装盒
SOT-227-4
晶体管型
1 N-Channel
钯功耗
520 W
最高工作温度
+ 150 C
最低工作温度
- 55 C
秋季时间
13 ns
上升时间
28 ns
VGS-栅极-源极-电压
20 V
Id 连续漏极电流
27 A
Vds-漏-源-击穿电压
800 V
Rds-On-Drain-Source-Resistance
320 mOhms
晶体管极性
N通道
典型关断延迟时间
50 ns
典型开启延迟时间
20 ns
通道模式
增强
Tags
IXFN27, IXFN2, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ukat
N-Ch 800V 27A 520W 0,32R SOT227B
***pNet
N CH MOSFET, 800V, 27A, SOT-227B;
***ark
N Channel Mosfet, 800V, 27A, Sot-227B; Transistor Polarity:n Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:27A; On Resistance Rds(On):0.32Ohm; Transistor Mounting:module; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: Yes
型号 制造商 描述 库存 价格
IXFN27N80Q
DISTI # IXFN27N80Q-ND
IXYS CorporationMOSFET N-CH 800V 27A SOT-227B
RoHS: Compliant
Min Qty: 10
Container: Tube
Temporarily Out of Stock
  • 10:$29.7850
IXFN27N80Q
DISTI # 14J1686
IXYS CorporationN CHANNEL MOSFET, 800V, 27A, SOT-227B,Transistor Polarity:N Channel,Continuous Drain Current Id:27A,Drain Source Voltage Vds:800V,On Resistance Rds(on):0.32ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4.5V,MSL:- RoHS Compliant: Yes8
  • 250:$23.3400
  • 100:$25.4400
  • 50:$26.2100
  • 25:$27.1100
  • 10:$28.0000
  • 5:$28.9000
  • 1:$29.7900
IXFN27N80Q
DISTI # 747-IXFN27N80Q
IXYS CorporationMOSFET 27 Amps 800V 0.32 Rds
RoHS: Compliant
0
  • 10:$29.7900
  • 30:$27.3700
  • 50:$26.2100
  • 100:$25.4400
  • 200:$23.3400
IXFN27N80Q
DISTI # 4905593
IXYS CorporationMOSFET, N, SOT-227B
RoHS: Compliant
8
  • 100:$41.0200
  • 10:$43.3500
  • 1:$44.1800
IXFN27N80Q
DISTI # 4905593
IXYS CorporationMOSFET, N, SOT-227B8
  • 10:£21.3600
  • 5:£21.6700
  • 1:£21.9800
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MOSFET 280 Amps 70V 0.006 Rds
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Mfr.#: IXFN200N10P

OMO.#: OMO-IXFN200N10P-IXYS-CORPORATION

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Mfr.#: IXFN22N55

OMO.#: OMO-IXFN22N55-1190

全新原装
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Mfr.#: IXFN250N06

OMO.#: OMO-IXFN250N06-1190

全新原装
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Mfr.#: IXFN20N120

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MOSFET 20 Amps 1200 V 0.75 Ohms Rds
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Mfr.#: IXFN26N90

OMO.#: OMO-IXFN26N90-IXYS-CORPORATION

MOSFET 900V 26A
可用性
库存:
Available
订购:
1000
输入数量:
IXFN27N80Q的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$35.01
US$35.01
10
US$33.26
US$332.60
100
US$31.51
US$3 150.90
500
US$29.76
US$14 879.25
1000
US$28.01
US$28 008.00
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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