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VEC2315-TL-H

VEC2315-TL-H
Mfr. #:
VEC2315-TL-H
制造商:
ON Semiconductor
描述:
MOSFET PCH+PCH 4V DRIVE SERIES
生命周期:
制造商新产品。
数据表:
VEC2315-TL-H 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
产品属性
属性值
制造商：
安森美半导体
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
VEC-8
通道数：
2 Channel
晶体管极性：
P-通道
Vds - 漏源击穿电压：
60 V
Id - 连续漏极电流：
2.5 A
Rds On - 漏源电阻：
137 mOhms
Pd - 功耗：
1 W
配置：
双重的
打包：
卷轴
系列：
VEC2315
晶体管类型：
2 P-Channel
品牌：
安森美半导体
产品类别：
MOSFET
出厂包装数量：
3000
子类别：
MOSFET
单位重量：
0.000582 oz
Tags
VEC2315-T, VEC231, VEC23, VEC2, VEC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
Dual P-Channel Power MOSFET, -60V, -2.5A, 137mΩ
***et
Trans MOSFET P-CH 60V 2.5A 8-Pin VEC T/R
***r Electronics
Small Signal Field-Effect Transistor, 2.5A I(D), 60V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
***ark
Reel / Pch+Pch 4V Drive Series
***emi
Single N-Channel Power MOSFET 60V, 2A, 137mΩ
***et
Trans MOSFET N-CH 60V 2A 3-Pin MCPH T/R
***nell
SMALL SIGNAL FIELD-EFFECT TRANSISTOR;
***emi
Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 2.8 A, 110 mΩ, SOT-223
***ure Electronics
N-Channel 60 V 0.11Ohm Surface Mount Logic Mosfet - SOT-223
***(Formerly Allied Electronics)
Transistor, N-channel, QFET MOSFET, 60V, 2.8A, 110 mOhm at VGS 10V, SOT-223 | ON Semiconductor FQT13N06LTF
***et
Trans MOSFET N-CH 60V 2.8A 4-Pin(3+Tab) SOT-223 T/R
***nell
MOSFET, N CH, 60V, 2.8A, SOT-223-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.8A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.088oh; Available until stocks are exhausted Alternative available
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***et Europe
MOSFET N-CH 60V 2.9A SOT-223
***i-Key Marketplace
SMALL-SIGNAL N-CHANNEL MOSFET
***Yang
Trans MOSFET N-CH 60V 2.9A 4-Pin SOT-223 T/R - Product that comes on tape, but is not reeled
***p One Stop
Trans MOSFET N-CH 60V 2.9A Automotive 4-Pin(3+Tab) SOT-223 T/R
***ure Electronics
Single N-Channel 60 V 120 mOhm 9.7 nC SIPMOS® Small Signal Mosfet - SOT-223
***ark
Mosfet, N-Ch, 60V, 2.9A, 150Deg C, 1.8W; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:2.9A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon BSP320SH6327XTSA1
***ineon
All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom
***ure Electronics
ZXMN6A11DN8 Series Dual N-Channel 60 V 0.12 Ohm Power MOSFET SMT - SOIC-8
***et
Transistor MOSFET Array Dual N-CH 60V 3.2A 8-Pin SOIC T/R
***(Formerly Allied Electronics)
MOSFET Dual N-Channel 60V 3.2A SOIC8 | Diodes Inc ZXMN6A11DN8TA
***ment14 APAC
MOSFET, DUAL, N, 60V, SO-8; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:3.2A; Drain Source Voltage Vds:60V; On Resistance Rds(on):180mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:3.2A; No. of Transistors:2; Package / Case:SOIC; Pin Configuration:1(S1), 2(G1),3(S2),4(G2),5+6(D2),7+8(D1); Power Dissipation Pd:1.25W; Power Dissipation Pd:2.1W; Pulse Current Idm:13.7A; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
MOSFET; N-Ch; Vds 60V; Vgs +/- 20V; Rds(on) 82mohm; Id 3.2A; TSOP-6; Pd 2W
***ure Electronics
N-Channel 60 V 0.01 Ohm 3.3 W Surface Mount Power Mosfet - TSOP-6
*** Source Electronics
Trans MOSFET N-CH 60V 3.2A 6-Pin TSOP T/R / MOSFET N-CH 60V 4.1A 6-TSOP
型号 制造商 描述 库存 价格
VEC2315-TL-H
DISTI # VEC2315-TL-H-ND		ON SemiconductorMOSFET 2P-CH 60V 2.5A VEC8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    VEC2315-TL-H
    DISTI # VEC2315-TL-H    		ON SemiconductorTrans MOSFET P-CH 60V 2.5A 8-Pin VEC T/R (Alt: VEC2315-TL-H)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
      VEC2315-TL-H
      DISTI # 863-VEC2315-TL-H      		ON SemiconductorMOSFET PCH+PCH 4V DRIVE SERIES
      RoHS: Compliant      		423
      • 1:$0.8200
      • 10:$0.6810
      • 100:$0.4400
      • 1000:$0.3520
      • 3000:$0.2970
      • 9000:$0.2860
      • 24000:$0.2750
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      可用性
      库存:
      Available
      订购:
      1988
      输入数量:
      VEC2315-TL-H的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格（美元）
      数量
      单价
      小计金额
      1
      US$0.82
      US$0.82
      10
      US$0.68
      US$6.81
      100
      US$0.44
      US$44.00
      1000
      US$0.35
      US$352.00
      从...开始
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