T2G6001528-Q3

Mfr. #:: T2G6001528-Q3
制造商:: Qorvo
描述:: RF JFET Transistors DC-6.0GHz 18 Watt 28V GaN
生命周期:: 制造商新产品。
数据表:: T2G6001528-Q3 数据表
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更多信息:: T2G6001528-Q3 更多信息

产品属性
属性值

制造商：: 科沃

产品分类：: 射频 JFET 晶体管

RoHS：: Y

晶体管类型：: HEMT

技术：: 氮化镓碳化硅

打包：: 托盘

系列：: T2G

品牌：: 科沃

湿气敏感：: 是的

产品类别：: 射频 JFET 晶体管

出厂包装数量：: 100

子类别：: 晶体管

第 # 部分别名：: 1100001

Tags: T2G6001528-Q, T2G6001, T2G6, T2G

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

T2G6001528-Q3 描述

***W: RF Power Transistor, DC- 6 GHz, 18 W, 9 dB, 28 V, GaN

T2G6001528-Q3 更多信息

T2G GaN HEMT Transistors: QorvoT2G GaN HEMT Transistors are 15W to 30W (P3dB) discrete GaN on SiC HEMT which operate from DC to 3.5GHz and 6.0GHz. These devices are constructed with Qorvo's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.Learn More

QPD GaN RF Transistors: Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

Market price

型号	制造商	描述	库存	价格
T2G6001528-Q3 DISTI # T2G6001528-Q3	Qorvo	Trans JFET N-CH 32V 5KA 2-Pin NI-200 (Alt: T2G6001528-Q3) RoHS: Compliant Min Qty: 100	Asia - 0
T2G6001528-Q3 DISTI # 772-T2G6001528-Q3	Qorvo	RF JFET Transistors DC-6.0GHz 18 Watt 28V GaN RoHS: Compliant	0	1:$105.7500 25:$95.4400
T2G6001528-Q3 EVAL BOARD DISTI # 772-T2G6001528-Q3EB	Qorvo	RF Development Tools DC-6.0GHz 18 Watt 28V GaN Eval Brd RoHS: Compliant	0	1:$875.0000

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