IPA65R045C7XKSA1

IPA65R045C7XKSA1
Mfr. #:
IPA65R045C7XKSA1
制造商:
Infineon Technologies
描述:
MOSFET HIGH POWER BEST IN CLASS
生命周期:
制造商新产品。
数据表:
IPA65R045C7XKSA1 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
IPA65R045C7XKSA1 更多信息
产品属性
属性值
制造商:
英飞凌
产品分类:
MOSFET
技术:
安装方式:
通孔
包装/案例:
TO-220FP-3
通道数:
1 Channel
晶体管极性:
N通道
Vds - 漏源击穿电压:
650 V
Id - 连续漏极电流:
18 A
Rds On - 漏源电阻:
40 mOhms
Vgs th - 栅源阈值电压:
3 V
Vgs - 栅源电压:
20 V
Qg - 门电荷:
93 nC
最低工作温度:
- 55 C
最高工作温度:
+ 150 C
Pd - 功耗:
35 W
配置:
单身的
频道模式:
增强
商品名:
酷摩
打包:
管子
高度:
16.15 mm
长度:
10.65 mm
系列:
CoolMOS C7
晶体管类型:
1 N-Channel
宽度:
4.85 mm
品牌:
英飞凌科技
秋季时间:
7 ns
产品类别:
MOSFET
上升时间:
14 ns
出厂包装数量:
500
子类别:
MOSFET
典型关断延迟时间:
82 ns
典型的开启延迟时间:
20 ns
第 # 部分别名:
IPA65R045C7 SP001080092
单位重量:
0.211644 oz
Tags
IPA65R0, IPA65R, IPA65, IPA6, IPA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 700V 18A 3-Pin TO-220 FP Tube
***ineon SCT
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range, PG-TO220-3, RoHS
***ineon
Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
型号 制造商 描述 库存 价格
IPA65R045C7XKSA1
DISTI # V36:1790_06377844
Infineon Technologies AGTrans MOSFET N-CH 650V 18A 3-Pin(3+Tab) TO-220FP Tube
RoHS: Compliant
0
    IPA65R045C7XKSA1
    DISTI # IPA65R045C7XKSA1-ND
    Infineon Technologies AGMOSFET N-CH 650V TO220-3
    RoHS: Compliant
    Min Qty: 500
    Container: Tube
    Temporarily Out of Stock
    • 500:$8.3387
    IPA65R045C7XKSA1
    DISTI # SP001080092
    Infineon Technologies AGTrans MOSFET N-CH 700V 18A 3-Pin TO-220 FP Tube (Alt: SP001080092)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    Europe - 500
    • 1000:€5.7900
    • 500:€6.1900
    • 100:€6.3900
    • 50:€6.5900
    • 25:€6.8900
    • 10:€7.1900
    • 1:€7.8900
    IPA65R045C7XKSA1
    DISTI # IPA65R045C7XKSA1
    Infineon Technologies AGTrans MOSFET N-CH 700V 18A 3-Pin TO-220 FP Tube - Bulk (Alt: IPA65R045C7XKSA1)
    RoHS: Compliant
    Min Qty: 53
    Container: Bulk
    Americas - 0
    • 530:$5.9900
    • 265:$6.0900
    • 159:$6.2900
    • 106:$6.5900
    • 53:$6.7900
    IPA65R045C7XKSA1
    DISTI # IPA65R045C7XKSA1
    Infineon Technologies AGTrans MOSFET N-CH 700V 18A 3-Pin TO-220 FP Tube - Rail/Tube (Alt: IPA65R045C7XKSA1)
    RoHS: Compliant
    Min Qty: 500
    Container: Tube
    Americas - 0
    • 5000:$6.5900
    • 3000:$6.6900
    • 2000:$6.8900
    • 1000:$7.1900
    • 500:$7.4900
    IPA65R045C7
    DISTI # 726-IPA65R045C7
    Infineon Technologies AGMOSFET HIGH POWER BEST IN CLASS
    RoHS: Compliant
    401
    • 1:$10.9700
    • 10:$10.0900
    • 25:$9.6700
    • 100:$8.5200
    • 250:$8.1000
    • 500:$7.5800
    IPA65R045C7XKSA1
    DISTI # 726-IPA65R045C7XKSA1
    Infineon Technologies AGMOSFET HIGH POWER BEST IN CLASS0
    • 1:$10.9700
    • 10:$10.0900
    • 25:$9.6700
    • 100:$8.5200
    • 250:$8.1000
    • 500:$7.5800
    IPA65R045C7XKSA1Infineon Technologies AGPower Field-Effect Transistor, 18A I(D), 650V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RoHS: Compliant
    5475
    • 1000:$6.2900
    • 500:$6.6200
    • 100:$6.8900
    • 25:$7.1900
    • 1:$7.7400
    IPA65R045C7XKSA1
    DISTI # IPA65R045C7XKSA1
    Infineon Technologies AGTransistor: N-MOSFET,unipolar,650V,18A,35W,TO220FP17
    • 1:$14.6600
    • 3:$13.2000
    • 10:$12.3000
    • 50:$11.3900
    IPA65R045C7XKSA1
    DISTI # XSKDRABS0036211
    Infineon Technologies AG 
    RoHS: Compliant
    400 in Stock0 on Order
    • 400:$8.2100
    • 100:$10.5600
    IPA65R045C7XKSA1
    DISTI # IPA65R045C7
    Infineon Technologies AGN-Ch 650V 18A 35W 0,045R TO220-Fullpak
    RoHS: Compliant
    0
    • 1:€15.7500
    • 10:€9.7500
    • 50:€7.7500
    • 100:€7.1000
    图片 型号 描述
    IPA65R045C7XKSA1

    Mfr.#: IPA65R045C7XKSA1

    OMO.#: OMO-IPA65R045C7XKSA1

    MOSFET HIGH POWER BEST IN CLASS
    IPA65R045C7

    Mfr.#: IPA65R045C7

    OMO.#: OMO-IPA65R045C7-1190

    MOSFET HIGH POWER BEST IN CLASS
    IPA65R045C7XKSA1

    Mfr.#: IPA65R045C7XKSA1

    OMO.#: OMO-IPA65R045C7XKSA1-INFINEON-TECHNOLOGIES

    MOSFET HIGH POWER BEST IN CLASS
    可用性
    库存:
    Available
    订购:
    3500
    输入数量:
    IPA65R045C7XKSA1的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格(美元)
    数量
    单价
    小计金额
    1
    US$10.97
    US$10.97
    10
    US$10.09
    US$100.90
    25
    US$9.67
    US$241.75
    100
    US$8.52
    US$852.00
    250
    US$8.10
    US$2 025.00
    500
    US$7.58
    US$3 790.00
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