FCB20N60FTM

Mfr. #:: FCB20N60FTM
制造商:: ON Semiconductor
描述:: MOSFET N-CH 600V 20A D2PAK
生命周期:: 制造商新产品。
数据表:: FCB20N60FTM 数据表
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产品属性
属性值

制造商: 仙童半导体

产品分类: FET - 单

系列: 超场效应晶体管

打包: Digi-ReelR 替代包装

单位重量: 0.046296 oz

安装方式: 贴片/贴片

包装盒: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

技术: 硅

工作温度: -55°C ~ 150°C (TJ)

安装型: 表面贴装

通道数: 1 Channel

供应商-设备-包: D2PAK

配置: 单身的

FET型: MOSFET N 沟道，金属氧化物

最大功率: 208W

晶体管型: 1 N-Channel

漏源电压 Vdss: 600V

输入电容-Ciss-Vds: 3080pF @ 25V

FET-Feature: 标准

Current-Continuous-Drain-Id-25°C: 20A (Tc)

Rds-On-Max-Id-Vgs: 190 mOhm @ 10A, 10V

Vgs-th-Max-Id: 5V @ 250μA

栅极电荷-Qg-Vgs: 98nC @ 10V

钯功耗: 208 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 65 ns

上升时间: 140 ns

VGS-栅极-源极-电压: 30 V

Id 连续漏极电流: 20 A

Vds-漏-源-击穿电压: 600 V

Rds-On-Drain-Source-Resistance: 150 mOhms

晶体管极性: N通道

典型关断延迟时间: 230 ns

典型开启延迟时间: 62 ns

正向跨导最小值: 17 S

通道模式: 增强

Tags: FCB20N60F, FCB20N, FCB20, FCB2, FCB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FCB20N60FTM 描述

***Semiconductor: N-Channel Power MOSFET, SUPERFET®, FRFET®, 600 V, 20 A, 190 mΩ, D2PAK

***p One Stop Global: Trans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R

***Components: MOSFET N-Channel 600V 20A SuperFET D2PAK

***ure Electronics: FCB20N60F Series 600 V 0.19 Ohms Surface Mount N-Channel FRFET D2-PAK-3

***i-Key: MOSFET N-CH 600V 20A D2PAK

***ser: MOSFETs 600V, NCH, FRFET

***inecomponents.com: 600V N-CHANNEL FRFET

***ark: Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:20A; Drain Source Voltage, Vds:600V; On Resistance, Rds(on):0.15ohm; Rds(on) Test Voltage, Vgs:10V; Operating Temperature Range:-55°C to +150°C; Package/Case:3-D2Pak

***th Star Micro: SuperFET is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

***nell: MOSFET, N, 600V, D2-PAK; Transistor type:MOSFET; Voltage, Vds typ:600V; Current, Id cont:20A; Resistance, Rds on:0.19ohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:5V; Case style:D2-PAK; Capacitance, Ciss typ:2370pF; Case style, alternate:TO-263; Current, Idm pulse:60A; Marking, SMD:FCB20N60F; Pin format:G(1),D(2),S(3); Power dissipation:208W; Power, Pd:208W; Temperature, Tj max:150°C; Termination Type:SMD; Time, fall:65ns; Time, rise:140ns; Time, trr typ:160ns; Transistor polarity:N; Transistors, No. of:1; Voltage, Rds measurement:10V; Voltage, Vds max:600V; Voltage, Vgs th max:5V; dv/dt:50V/ns

***rchild Semiconductor: SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.

Market price

型号	制造商	描述	库存	价格
FCB20N60FTM DISTI # V72:2272_06337697	ON Semiconductor	600V, NCH, FRFET	798	500:$2.5740 250:$2.8590 100:$3.0130 25:$3.1269 10:$3.4750 1:$4.4847
FCB20N60FTM DISTI # V36:1790_06337697	ON Semiconductor	600V, NCH, FRFET	0	800000:$1.8710 400000:$1.8740 80000:$2.1480 8000:$2.6300 800:$2.7100
FCB20N60FTM DISTI # FCB20N60FTMCT-ND	ON Semiconductor	MOSFET N-CH 600V 20A D2PAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1600In Stock	100:$2.7327 10:$3.3350 1:$3.7100
FCB20N60FTM DISTI # FCB20N60FTMDKR-ND	ON Semiconductor	MOSFET N-CH 600V 20A D2PAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1600In Stock	100:$2.7327 10:$3.3350 1:$3.7100
FCB20N60FTM DISTI # FCB20N60FTMTR-ND	ON Semiconductor	MOSFET N-CH 600V 20A D2PAK RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR)	800In Stock	5600:$1.7416 2400:$1.8096 1600:$1.9048 800:$2.2586
FCB20N60FTM DISTI # 33079212	ON Semiconductor	600V, NCH, FRFET	800	2400:$1.7960 1600:$1.8858 800:$2.2360
FCB20N60FTM DISTI # 33599206	ON Semiconductor	600V, NCH, FRFET	800	800:$2.2667
FCB20N60FTM DISTI # 32681977	ON Semiconductor	600V, NCH, FRFET	798	500:$2.5740 250:$2.8590 100:$3.0130 25:$3.1269 10:$3.4750 4:$4.4847
FCB20N60FTM DISTI # FCB20N60FTM	ON Semiconductor	Trans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R (Alt: FCB20N60FTM) RoHS: Compliant Min Qty: 800 Container: Tape and Reel	Europe - 0	8000:€1.4900 4800:€1.5900 3200:€1.6900 800:€1.7900 1600:€1.7900
FCB20N60FTM DISTI # FCB20N60FTM	ON Semiconductor	Trans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R (Alt: FCB20N60FTM) RoHS: Compliant Min Qty: 800 Container: Tape and Reel	Asia - 0	40000:$2.1243 20000:$2.1597 8000:$2.2341 4000:$2.3139 2400:$2.3996 1600:$2.4919 800:$2.5916
FCB20N60FTM DISTI # FCB20N60FTM	ON Semiconductor	Trans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FCB20N60FTM) RoHS: Compliant Min Qty: 800 Container: Reel	Americas - 0	8000:$1.4900 800:$1.5900 1600:$1.5900 3200:$1.5900 4800:$1.5900
FCB20N60FTM DISTI # 20M1150	ON Semiconductor	N CHANNEL MOSFET, 600V, 20A, D2-PAK,Transistor Polarity:N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.15ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V RoHS Compliant: Yes	0	4000:$1.9400 2400:$2.1000 1600:$2.1600 1:$2.3300 800:$2.3300
FCB20N60FTM DISTI # 67P3446	ON Semiconductor	N CHANNEL MOSFET, 600V, 20A, D2-PAK,Transistor Polarity:N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.15ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V RoHS Compliant: Yes	0	500:$2.6500 250:$2.9400 100:$3.0900 50:$3.2500 25:$3.4000 10:$3.5600 1:$4.1600
FCB20N60FTM DISTI # 512-FCB20N60FTM	ON Semiconductor	MOSFET 600V NCH FRFET RoHS: Compliant	695	1:$3.4200 10:$2.9100 100:$2.5200 250:$2.3900 500:$2.1500 800:$1.8600
FCB20N60FTM	Fairchild Semiconductor Corporation		253
FCB20N60FTM DISTI # XSFP00000073919	Fairchild Semiconductor Corporation	RoHS: Compliant	1600 in Stock0 on Order	1600:$2.1600 800:$2.3100

图片	型号	描述
	Mfr.#: FCB20N60FTM OMO.#: OMO-FCB20N60FTM-ON-SEMICONDUCTOR	MOSFET N-CH 600V 20A D2PAK
	Mfr.#: FCB20N60F_F085 OMO.#: OMO-FCB20N60F-F085-124	Darlington Transistors MOSFET 600V, 20A SuperFET
	Mfr.#: FCB2012K-070T09 OMO.#: OMO-FCB2012K-070T09-1190	全新原装
	Mfr.#: FCB2012K-110 OMO.#: OMO-FCB2012K-110-1190	全新原装
	Mfr.#: FCB2012K-110T06 OMO.#: OMO-FCB2012K-110T06-1190	全新原装
	Mfr.#: FCB2012K-190T06 OMO.#: OMO-FCB2012K-190T06-1190	全新原装
	Mfr.#: FCB2012K-280T06 OMO.#: OMO-FCB2012K-280T06-1190	全新原装
	Mfr.#: FCB2012KF-260T07 OMO.#: OMO-FCB2012KF-260T07-1190	全新原装
	Mfr.#: FCB20N60TM-CUT TAPE OMO.#: OMO-FCB20N60TM-CUT-TAPE-1190	全新原装
	Mfr.#: FCB20N60-F085 OMO.#: OMO-FCB20N60-F085-ON-SEMICONDUCTOR	MOSFET N-CH 600V 20A D2PAK

FCB20N60FTM

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes