APT40GP90B2DQ2G

Mfr. #:: APT40GP90B2DQ2G
制造商:: Microchip / Microsemi
描述:: IGBT Transistors FG, IGBT-COMBI, 900V, TO-247 T-MAX, RoHS
生命周期:: 制造商新产品。
数据表:: APT40GP90B2DQ2G 数据表
交货:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: APT40GP90B2DQ2G Datasheet APT40GP90B2DQ2G Datasheet (P4-P6)APT40GP90B2DQ2G Datasheet (P7-P9)
ECAD Model:

产品属性
属性值

制造商：: 微芯片

产品分类：: IGBT晶体管

RoHS：: Y

技术：: 硅

打包：: 管子

品牌：: 微芯片/Microsemi

产品类别：: IGBT晶体管

出厂包装数量：: 1

子类别：: IGBT

Tags: APT40GP90B, APT40GP9, APT40GP, APT40G, APT40, APT4, APT

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

APT40GP90B2DQ2G 描述

***ical: Trans IGBT Chip N-CH 900V 101A 543000mW 3-Pin(3+Tab) T-MAX Tube

***rochip: FG IGBT-COMBI 900V TO-247 T-MAX RoHS

*** Stop Electro: Insulated Gate Bipolar Transistor, 101A I(C), 900V V(BR)CES, N-Channel

***ical: Trans IGBT Chip N-CH 900V 75A 400000mW 3-Pin(3+Tab) TO-247AD

***ure Electronics: IXGH Series 900 Vce 75 A 20 ns t(on) HiPerFAST IGBT w/ Fast Diode - TO-247AD

***el Electronic: OP Amp Single Volt Fdbk R-R I/O ±6V/12V 8-Pin SOIC N T/R

***DA Technology Co., Ltd.: Product Description Demo for Development.

***ical: Trans IGBT Chip N-CH 900V 75A 337000mW 3-Pin(3+Tab) TO-247

***rochip: IGBT PT MOS 8 Combi 900 V 43 A TO-247

*** Stop Electro: Insulated Gate Bipolar Transistor, 78A I(C), 900V V(BR)CES, N-Channel, TO-247

***ical: Trans IGBT Chip N-CH 900V 72A 417000mW 3-Pin(3+Tab) TO-247 Tube

***ark: IGBT PT MOS 7 SINGLE 900 V 25 A TO-247 3 TO-247 TUBE ROHS COMPLIANT: YES

*** Stop Electro: Insulated Gate Bipolar Transistor, 72A I(C), 900V V(BR)CES, N-Channel, TO-247AD

***p One Stop Global: Trans IGBT Chip N-CH 900V 51A 200000mW 3-Pin(3+Tab) TO-247AC Tube

***ineon SCT: 900V Warp 20-100 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS

***trelec: IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 900 V Collector-emitter saturation voltage: 2.25 V Current release time: 150 ns Power dissipation: 200 W

***nell: IGBT, TO-247; Collector Emitter Saturation Voltage Vce(on): 2.7V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 900V; Transistor Case Style: TO-247; No. of Pins: 3Pins; MSL: -; SVHC: No SVHC (27-Jun-2018); Cur

***ark: MOSFET; Transistor Type:MOSFET; Package/Case:TO-247AC; Power Dissipation, Pd:200W; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Current Rating:51A; Mounting Type:Through Hole; Voltage Rating:900V ;RoHS Compliant: Yes

***ment14 APAC: IGBT, 900V, 51A, TO-247AC; Transistor Type:IGBT; DC Collector Current:51A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:900V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:51A; Current Temperature:25°C; Device Marking:IRG4PF50WPbF; Fall Time Max:220ns; Fall Time tf:220ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:204A; Rise Time:26ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:900V

***p One Stop Global: Trans IGBT Chip N-CH 900V 51A 200000mW 3-Pin(3+Tab) TO-247AC Tube

***ure Electronics: IRG4PF50WDPBF Series 900 V 28 A N-Channel UltraFast IGBT - TO-247AC

***ineon SCT: Copacked 900V IGBT in a TO-247AC package with ultrafast 20-100 kHz ultrafast, ultrasoft recovery anti-parallel diode, TO247COPAK-3, RoHS

***trelec: IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 900 V Collector-emitter saturation voltage: 2.7 V Current release time: 190 ns Power dissipation: 200 W

***ark: IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:51A; Collector Emitter Saturation Voltage, Vce(sat):2.7V; Power Dissipation, Pd:200W; Package/Case:TO-247AC ;RoHS Compliant: Yes

***nell: IGBT, TO-247; Collector Emitter Saturation Voltage Vce(on): 2.25V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 900V; Transistor Case Style: TO-247; No. of Pins: 3Pins; MSL: -; SVHC: No SVHC (27-Jun-2018); Cu

***ment14 APAC: IGBT, 900V, 51A, TO-247AC; Transistor Type:IGBT; DC Collector Current:51A; Collector Emitter Voltage Vces:2.25V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:900V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:51A; Current Temperature:25°C; Device Marking:IRG4PF50WDPbF; Fall Time Max:190ns; Fall Time tf:220ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:204A; Rise Time:52ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:900V

***ical: Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247

***ure Electronics: IXYH80N90C3 900 Vce 80 A 34 ns t(on) GenX3 High-Speed IGBT - TO-247-3

***i-Key: IGBT 900V 165A 830W TO247

Market price

型号	制造商	描述	库存	价格
APT40GP90B2DQ2G DISTI # V36:1790_18738388	Microsemi Corporation	APT40GP90B2DQ2G RoHS: Compliant	637	500:$12.6100 100:$12.9300 50:$13.6000 10:$14.7900 1:$16.4300
APT40GP90B2DQ2G DISTI # V99:2348_09096394	Microsemi Corporation	APT40GP90B2DQ2G RoHS: Compliant	0
APT40GP90B2DQ2G DISTI # APT40GP90B2DQ2G-ND	Microsemi Corporation	IGBT 900V 101A 543W TMAX RoHS: Compliant Container: Tube	Temporarily Out of Stock
APT40GP90B2DQ2G DISTI # 26070501	Microsemi Corporation	APT40GP90B2DQ2G RoHS: Compliant	637	1:$16.4300
APT40GP90B2DQ2G DISTI # APT40GP90B2DQ2G	Microchip Technology Inc	Power MOS 7 IGBT N-Channel 900V 101A 3-Pin TO-247 - Rail/Tube (Alt: APT40GP90B2DQ2G) RoHS: Compliant Min Qty: 180 Container: Tube	Americas - 0
APT40GP90B2DQ2G DISTI # 494-APT40GP90B2DQ2G	Microchip Technology Inc	IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi RoHS: Compliant	0
APT40GP90B2DQ2G	Advanced Power Technology		19	15:$32.7512 8:$34.5707 1:$36.3902

图片	型号	描述
	Mfr.#: APT40GP60B2DQ2G OMO.#: OMO-APT40GP60B2DQ2G	IGBT Transistors FG, IGBT-COMBI, 600V, TO-247 T-MAX, RoHS
	Mfr.#: APT40GP90B2DQ2G OMO.#: OMO-APT40GP90B2DQ2G	IGBT Transistors FG, IGBT-COMBI, 900V, TO-247 T-MAX, RoHS
	Mfr.#: APT40GP60JDQ2 OMO.#: OMO-APT40GP60JDQ2	IGBT Modules FG, IGBT-COMBI, 600V, 40A, SOT-227
	Mfr.#: APT40GP90BG OMO.#: OMO-APT40GP90BG	IGBT Transistors FG, IGBT, 900V, 40A, TO-247, RoHS
	Mfr.#: APT40GP60BG OMO.#: OMO-APT40GP60BG	IGBT Transistors FG, IGBT, 600V, 40A, TO-247, RoHS
	Mfr.#: APT40GP60B2DQ2G OMO.#: OMO-APT40GP60B2DQ2G-MICROSEMI	IGBT Transistors
	Mfr.#: APT40GP60B2DF2 OMO.#: OMO-APT40GP60B2DF2-1190	全新原装
	Mfr.#: APT40GP60F2 OMO.#: OMO-APT40GP60F2-1190	全新原装
	Mfr.#: APT40GP60J OMO.#: OMO-APT40GP60J-1190	Trans IGBT Chip N-CH 600V 86A 4-Pin SOT-227
	Mfr.#: APT40GP90JDF2 OMO.#: OMO-APT40GP90JDF2-1190	全新原装

APT40GP90B2DQ2G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes