MJE181STU

MJE181STU
Mfr. #:
MJE181STU
制造商:
ON Semiconductor / Fairchild
描述:
Bipolar Transistors - BJT NPN Epitaxial Sil
生命周期:
制造商新产品。
数据表:
MJE181STU 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商:
安森美半导体
产品分类:
双极晶体管 - BJT
RoHS:
Y
安装方式:
通孔
包装/案例:
TO-126-3
晶体管极性:
NPN
配置:
单身的
集电极-发射极电压 VCEO 最大值:
60 V
集电极-基极电压 VCBO:
80 V
发射极基极电压 VEBO:
7 V
集电极-发射极饱和电压:
1.7 V
最大直流集电极电流:
3 A
增益带宽积 fT:
50 MHz
最低工作温度:
- 65 C
最高工作温度:
+ 150 C
系列:
MJE181
直流电流增益 hFE 最大值:
250
高度:
11 mm
长度:
8 mm
打包:
管子
宽度:
3.25 mm
品牌:
安森美半导体/飞兆半导体
连续集电极电流:
3 A
DC 集电极/基极增益 hfe 最小值:
50
Pd - 功耗:
12.5 W
产品类别:
BJT - 双极晶体管
出厂包装数量:
1920
子类别:
晶体管
单位重量:
0.026843 oz
Tags
MJE181, MJE18, MJE1, MJE
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Transistor,bjt,npn,60V V(Br)Ceo,3A I(C),to-126 Rohs Compliant: Yes
***emi
3.0 A, 60 V NPN Bipolar Power Transistor
***r Electronics
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
*** Electronic Components
Bipolar Transistors - BJT NPN Epitaxial Sil
*** Electronic Components
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
***ical
Trans GP BJT NPN 60V 3A 1000mW 3-Pin(3+Tab) TO-126 Tube
***r Electronics
Small Signal Bipolar Transistor, 3A I(C), 1-Element, NPN
***ark
Bipolar (BJT) Single Transistor, NPN, 60 V, 1.25 W, 1.5 A, 40
***emi
1.5 A, 60 V NPN Power Bipolar Junction Transistor
*** Electronic Components
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
***ical
Trans GP BJT NPN 60V 1.5A 1250mW 3-Pin(3+Tab) TO-126 Bulk
***r Electronics
Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
***nell
TRANSISTOR, NPN; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: -; Power Dissipation Pd: 1.25W; DC Collector Current: 1.5A; DC Current Gain hFE: 40hFE; Transistor Case Style: TO-126; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 500mV; Current Ic Continuous a Max: 500mA; Hfe Min: 100; Termination Type: Through Hole; Transistor Type: Power Bipolar
***emi
1.5 A, 60 V NPN Power Bipolar Junction Transistor
***ure Electronics
BD135 Series 60 V 1.5 A Through Hole NPN Epitaxial Silicon Transistor - TO-126
***r Electronics
Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
***ow.cn
Trans GP BJT NPN 60V 1.5A 1250mW 3-Pin(3+Tab) TO-126 Tube
***el Electronic
Bipolar Transistors - BJT NPN Epitaxial Sil
***nell
TRANSISTOR, BIPOL, NPN, 60V, TO-126-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: -; Power Dissipation Pd: 12.5W; DC Collector Current: 1.5A; DC Current Gain hFE: 63hFE; Transis
***et
Bipolar (BJT) Transistor NPN 45V 2A 3MHz 25W Through Hole TO-126
*** Electronic Components
Bipolar Transistors - BJT NPN Epitaxial Sil
***ark
RAIL / NPN/2A/45V/TO-126
***el Electronic
JFET N-CH 30V 625MW TO92
型号 制造商 描述 库存 价格
MJE181STU
DISTI # V36:1790_06302177
ON SemiconductorNPN EPITAXIAL SILICON TRANSIST918
  • 50000:$0.1288
  • 25000:$0.1318
  • 10000:$0.1388
  • 2500:$0.1487
  • 1000:$0.1744
  • 100:$0.2247
  • 10:$0.4029
  • 1:$0.4868
MJE181STU
DISTI # MJE181STU-ND
ON SemiconductorTRANS NPN 60V 3A TO-126
RoHS: Compliant
Min Qty: 1
Container: Tube
1129In Stock
  • 1000:$0.1830
  • 500:$0.2368
  • 100:$0.3014
  • 10:$0.4040
  • 1:$0.4700
MJE181STU
DISTI # 26636602
ON SemiconductorNPN EPITAXIAL SILICON TRANSIST5760
  • 50000:$0.1301
  • 25000:$0.1307
  • 10000:$0.1376
  • 2500:$0.1475
  • 1920:$0.1732
MJE181STU
DISTI # 27461005
ON SemiconductorNPN EPITAXIAL SILICON TRANSIST918
  • 50000:$0.1385
  • 25000:$0.1417
  • 10000:$0.1492
  • 2500:$0.1599
  • 1000:$0.1875
  • 100:$0.2416
  • 49:$0.3938
MJE181STU
DISTI # MJE181STU
ON SemiconductorTrans GP BJT NPN 60V 3A 3-Pin(3+Tab) TO-126 Rail - Bulk (Alt: MJE181STU)
RoHS: Compliant
Min Qty: 2273
Container: Bulk
Americas - 0
  • 22730:$0.1349
  • 11365:$0.1389
  • 6819:$0.1409
  • 4546:$0.1419
  • 2273:$0.1429
MJE181STU
DISTI # MJE181STU
ON SemiconductorTrans GP BJT NPN 60V 3A 3-Pin(3+Tab) TO-126 Rail - Rail/Tube (Alt: MJE181STU)
RoHS: Compliant
Min Qty: 1920
Container: Tube
Americas - 0
  • 19200:$0.1259
  • 11520:$0.1289
  • 7680:$0.1309
  • 1920:$0.1329
  • 3840:$0.1329
MJE181STU
DISTI # 82C8693
ON SemiconductorTRANSISTOR,BJT,NPN,60V V(BR)CEO,3A I(C),TO-126 ROHS COMPLIANT: YES0
  • 50000:$0.1400
  • 24000:$0.1430
  • 10000:$0.1500
  • 2000:$0.1600
  • 1000:$0.1650
  • 100:$0.2320
  • 10:$0.3450
  • 1:$0.5080
MJE181STU
DISTI # 512-MJE181STU
ON SemiconductorBipolar Transistors - BJT NPN Epitaxial Sil
RoHS: Compliant
5963
  • 1:$0.4500
  • 10:$0.3710
  • 100:$0.2260
  • 1000:$0.1750
  • 2500:$0.1490
MJE181STUFairchild Semiconductor CorporationPower Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
RoHS: Compliant
5760
  • 500:$0.1500
  • 1000:$0.1500
  • 100:$0.1600
  • 25:$0.1700
  • 1:$0.1800
MJE181STU
DISTI # 8062891
ON SemiconductorTRANSISTORFAIRCHILDMJE181STU, TU720
  • 600:£0.1770
  • 300:£0.2020
  • 120:£0.2260
  • 60:£0.3030
图片 型号 描述
OPA1678IDR

Mfr.#: OPA1678IDR

OMO.#: OMO-OPA1678IDR

Operational Amplifiers - Op Amps DUAL AUDIO OPAMP
IS61WV5128BLL-10TLI

Mfr.#: IS61WV5128BLL-10TLI

OMO.#: OMO-IS61WV5128BLL-10TLI

SRAM 4Mb (512k x 8) 10ns Async SRAM 3.3v
MJE171G

Mfr.#: MJE171G

OMO.#: OMO-MJE171G

Bipolar Transistors - BJT 3A 60V 12.5W PNP
MJE181G

Mfr.#: MJE181G

OMO.#: OMO-MJE181G

Bipolar Transistors - BJT 3A 60V 12.5W NPN
DLW5BTH251TQ2L

Mfr.#: DLW5BTH251TQ2L

OMO.#: OMO-DLW5BTH251TQ2L

Common Mode Chokes / Filters 250ohms 3A 50VDC AECQ200 Pwrtrain/Saf
FG16C0G1H104JNT06

Mfr.#: FG16C0G1H104JNT06

OMO.#: OMO-FG16C0G1H104JNT06

Multilayer Ceramic Capacitors MLCC - Leaded RAD 50V 0.1uF C0G 5% LS:2.5mm
IS61WV5128BLL-10TLI

Mfr.#: IS61WV5128BLL-10TLI

OMO.#: OMO-IS61WV5128BLL-10TLI-INTEGRATED-SILICON-SOLUTION

SRAM 4Mb (512k x 8) 10ns Async SRAM 3.3v
1025HC50-RTR

Mfr.#: 1025HC50-RTR

OMO.#: OMO-1025HC50-RTR-EATON

Fast-acting, high current, surface mount ceramic tube fuses
DLW5BTH251TQ2L

Mfr.#: DLW5BTH251TQ2L

OMO.#: OMO-DLW5BTH251TQ2L-MURATA-ELECTRONICS

CMC 3A 2LN 250 OHM SMD
OPA1678IDR

Mfr.#: OPA1678IDR

OMO.#: OMO-OPA1678IDR-TEXAS-INSTRUMENTS

IC AUDIO AMP 2 CIRCUIT 8SOIC
可用性
库存:
Available
订购:
1988
输入数量:
MJE181STU的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$0.45
US$0.45
10
US$0.37
US$3.71
100
US$0.23
US$22.60
1000
US$0.18
US$175.00
2500
US$0.15
US$372.50
从...开始
最新产品
Top