IRF3709ZPBF

IRF3709ZPBF
Mfr. #:
IRF3709ZPBF
制造商:
Infineon Technologies
描述:
MOSFET MOSFT 30V 87A 6.3mOhm 17nC Qg
生命周期:
制造商新产品。
数据表:
IRF3709ZPBF 数据表
交货:
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HTML Datasheet:
IRF3709ZPBF DatasheetIRF3709ZPBF Datasheet (P4-P6)IRF3709ZPBF Datasheet (P7-P9)IRF3709ZPBF Datasheet (P10-P12)IRF3709ZPBF Datasheet (P13)
ECAD Model:
更多信息:
IRF3709ZPBF 更多信息
产品属性
属性值
制造商:
英飞凌
产品分类:
MOSFET
RoHS:
Y
技术:
安装方式:
通孔
包装/案例:
TO-220-3
通道数:
1 Channel
晶体管极性:
N通道
Vds - 漏源击穿电压:
30 V
Id - 连续漏极电流:
87 A
Rds On - 漏源电阻:
7.8 mOhms
Vgs - 栅源电压:
20 V
Qg - 门电荷:
17 nC
Pd - 功耗:
79 W
配置:
单身的
打包:
管子
高度:
15.65 mm
长度:
10 mm
晶体管类型:
1 N-Channel
宽度:
4.4 mm
品牌:
英飞凌科技
产品类别:
MOSFET
出厂包装数量:
1000
子类别:
MOSFET
第 # 部分别名:
SP001564614
单位重量:
0.211644 oz
Tags
IRF3709Z, IRF3709, IRF370, IRF37, IRF3, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 6.3 mOhm 17 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
***ark
MOSFET, N, 30V, TO-220AB; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:87A; Resistance, Rds On:0.0063ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.25V; Case Style:TO-220AB; ;RoHS Compliant: Yes
***nell
MOSFET, N, 30V, TO-220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 87A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0063ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.25V; Power Dissipation Pd: 79W; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Base Number: 3709; Current Id Max: 87A; N-channel Gate Charge: 17nC; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Pulse Current Idm: 350A; Termination Type: Through Hole; Voltage Vds Typ: 30V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 2.25V; Voltage Vgs th Min: 1.35V
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
型号 制造商 描述 库存 价格
IRF3709ZPBF
DISTI # V99:2348_13890148
Infineon Technologies AGTrans MOSFET N-CH 30V 87A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant
100
  • 1000:$0.5984
  • 500:$0.7080
  • 100:$0.7860
  • 10:$0.9751
  • 1:$1.0966
IRF3709ZPBF
DISTI # IRF3709ZPBF-ND
Infineon Technologies AGMOSFET N-CH 30V 87A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube
2198In Stock
  • 1000:$0.7117
  • 500:$0.9014
  • 100:$1.1624
  • 10:$1.4710
  • 1:$1.6600
IRF3709ZPBF
DISTI # 30719910
Infineon Technologies AGTrans MOSFET N-CH 30V 87A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant
3250
  • 1000:$0.6211
  • 500:$0.7872
  • 100:$0.8909
  • 23:$1.1616
IRF3709ZPBF
DISTI # 26198111
Infineon Technologies AGTrans MOSFET N-CH 30V 87A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant
100
  • 100:$0.7860
  • 14:$0.9751
IRF3709ZPBF
DISTI # SP001564614
Infineon Technologies AGTrans MOSFET N-CH 30V 87A 3-Pin(3+Tab) TO-220AB (Alt: SP001564614)
RoHS: Compliant
Min Qty: 1
Europe - 900
  • 1:€1.2149
  • 10:€1.0439
  • 25:€1.0409
  • 50:€1.0379
  • 100:€0.7929
  • 500:€0.7009
  • 1000:€0.5529
IRF3709ZPBF
DISTI # 70017980
Infineon Technologies AGIRF3709ZPBF N-channel MOSFET Transistor,87 A,30 V,3-Pin TO-220AB
RoHS: Compliant
0
  • 500:$2.4500
IRF3709ZPBFInternational RectifierPower Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant
200
  • 1000:$0.5700
  • 500:$0.6000
  • 100:$0.6200
  • 25:$0.6500
  • 1:$0.7000
IRF3709ZPBF
DISTI # 942-IRF3709ZPBF
Infineon Technologies AGMOSFET MOSFT 30V 87A 6.3mOhm 17nC Qg
RoHS: Compliant
1618
  • 1:$1.4200
  • 10:$1.2100
  • 100:$0.9280
  • 500:$0.8200
  • 1000:$0.6470
IRF3709ZPBFInternational Rectifier42 A, 30 V, 0.0063 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB480
  • 257:$1.8000
  • 90:$1.9500
  • 1:$4.5000
IRF3709ZPBFInternational Rectifier42 A, 30 V, 0.0063 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB100
  • 90:$1.9500
  • 9:$2.2500
  • 1:$4.5000
IRF3709ZPBF
DISTI # 6886847
Infineon Technologies AGMOSFET N-CHANNEL 30V 87A HEXFET TO220AB, PK90
  • 5:£1.0920
  • 25:£0.8740
  • 50:£0.7740
  • 100:£0.6720
  • 250:£0.6580
IRF3709ZPBFInternational Rectifier 1275
    IRF3709ZPBF
    DISTI # IRF3709ZPBF
    Infineon Technologies AGTransistor: N-MOSFET,unipolar,30V,87A,79W,TO220AB194
    • 1:$0.9300
    • 3:$0.8300
    • 10:$0.6700
    • 50:$0.6100
    IRF3709ZPBF
    DISTI # IRF3709ZPBF
    Infineon Technologies AGN-Ch 30V 42A 79W 0,0063R TO220AB
    RoHS: Compliant
    230
    • 10:€0.7285
    • 50:€0.4885
    • 200:€0.4285
    • 500:€0.4125
    IRF3709ZPBFInternational Rectifier 
    RoHS: Compliant
    Europe - 45
      IRF3709ZPBF
      DISTI # 1436943
      Infineon Technologies AGMOSFET, N, 30V, TO-220AB
      RoHS: Compliant
      0
      • 1:$2.2500
      • 10:$1.9200
      • 100:$1.4700
      • 500:$1.3100
      • 1000:$1.0300
      IRF3709ZPBF
      DISTI # C1S322000480135
      Infineon Technologies AGMOSFETs
      RoHS: Compliant
      100
      • 100:$0.7860
      • 10:$0.9751
      图片 型号 描述
      AD8605ARTZ-REEL7

      Mfr.#: AD8605ARTZ-REEL7

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      LM22672MRE-ADJ/NOPB

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      SFH 5711-2/3-Z

      Mfr.#: SFH 5711-2/3-Z

      OMO.#: OMO-SFH-5711-2-3-Z

      Ambient Light Sensors PHOTO IC (ALS) SMT
      K104K15X0UH53H5H

      Mfr.#: K104K15X0UH53H5H

      OMO.#: OMO-K104K15X0UH53H5H

      Multilayer Ceramic Capacitors MLCC - Leaded 100nF 100volts 10% High Temp AEC-Q200
      EMZR500ADA101MF80G

      Mfr.#: EMZR500ADA101MF80G

      OMO.#: OMO-EMZR500ADA101MF80G

      Aluminum Electrolytic Capacitors - SMD 50V 100uF 20% Tol. AEC-Q200
      AD8605ARTZ-REEL7

      Mfr.#: AD8605ARTZ-REEL7

      OMO.#: OMO-AD8605ARTZ-REEL7-ANALOG-DEVICES-INC-ADI

      Precision Amplifiers Prec Low Noise CMOS RRIO SGL
      可用性
      库存:
      Available
      订购:
      1984
      输入数量:
      IRF3709ZPBF的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格(美元)
      数量
      单价
      小计金额
      1
      US$1.41
      US$1.41
      10
      US$1.20
      US$12.00
      100
      US$0.93
      US$92.80
      500
      US$0.82
      US$410.00
      1000
      US$0.65
      US$647.00
      2000
      US$0.57
      US$1 148.00
      10000
      US$0.55
      US$5 530.00
      由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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