IRG4PH40UD2-EP

Mfr. #:: IRG4PH40UD2-EP
制造商:: Infineon Technologies
描述:: IGBT Transistors 1200V UltraFast 5-40kHz
生命周期:: 制造商新产品。
数据表:: IRG4PH40UD2-EP 数据表
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ECAD Model:
更多信息:: IRG4PH40UD2-EP 更多信息

产品属性
属性值

制造商: 英飞凌科技

产品分类: IGBT - 单

系列: -

打包: 大部分

单位重量: 1.340411 oz

安装方式: 通孔

包装盒: TO-247-3

输入类型: 标准

安装型: 通孔

供应商-设备-包: TO-247AD

配置: 单身的

最大功率: 160W

反向恢复时间trr: 50ns

电流收集器 Ic-Max: 41A

电压收集器发射极击穿最大值: 1200V

IGBT型: -

电流收集器脉冲Icm: 82A

Vce-on-Max-Vge-Ic: 3.1V @ 15V, 21A

开关能源: 1.95mJ (on), 1.71mJ (off)

栅极电荷: 100nC

Td-on-off-25°C: 22ns/100ns

测试条件: 800V, 21A, 10 Ohm, 15V

钯功耗: 160 W

最高工作温度: + 150 C

最低工作温度: - 55 C

集电极-发射极-电压-VCEO-Max: 1.2 kV

集电极-发射极-饱和-电压: 2.43 V

25-C 时的连续集电极电流: 41 A

栅极-发射极-漏电流: 100 nA

最大栅极发射极电压: +/- 20 V

连续集电极电流 Ic-Max: 41 A

Tags: IRG4PH40UD2-EP, IRG4PH40UD2-E, IRG4PH40UD2, IRG4PH40UD, IRG4PH40U, IRG4PH4, IRG4PH, IRG4P, IRG4, IRG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRG4PH40UD2-EP 描述

***ark: TRANSISTOR,IGBT,N-CHAN+DIODE,1.2kV V(BR)CES,41A I(C),TO-247AD ;RoHS Compliant: Yes

***Components: In a Pack of 2, Infineon IRG4PH40UD2-EP IGBT, 41 A 1200 V, 3-Pin TO-247AD

***ernational Rectifier: 1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AD package

***ical: Trans IGBT Chip N-CH 1.2KV 41A 3-Pin(3+Tab) TO-247AD

***ineon: Target Applications: Solar; Welding

***i-Key: IGBT W/DIODE 1200V 41A TO247AD

*** Source Electronics: IGBT 1200V 41A 160W TO247AD

***nell: IGBT, TO-247AD; Transistor type:IGBT; Voltage, Vces:1200V; Current, Ic continuous a max:21A; Voltage, Vce sat max:3.1V; Power dissipation:160W; Case style:TO-247AD; Current, Icm pulsed:82A; Pins, No. of:3; Power, Pd:160W; Temperature, current:25°C; Temperature, full power rating:25°C; Termination Type:Through Hole; Time, fall max:200ns; Time, rise:26ns; Transistor polarity:N; Transistors, No. of:1; Voltage, Vceo:1200V

IRG4PH40UD2-EP 更多信息

300-1200V IGBTs: Infineon Rectifier has an extensive portfolio of IGBTs that ranges from 300V to 1200V and achieves the highest performance for specific application requirements. The Infineon IGBT portfolio includes the new ultra-fast IRG7PH 1200V Trench IGBTs that offer higher system efficiency while cutting switching losses and delivering higher switching frequencies. International Infineon IRG7PH ultra-fast 1200V IGBTs utilize thin wafer Field-Stop Trench technology that significantly reduces switching and conduction losses to deliver higher power density and greater efficiency at higher frequencies.Learn More

Market price

型号	制造商	描述	库存	价格
IRG4PH40UD2-EP DISTI # IRG4PH40UD2-EP-ND	Infineon Technologies AG	IGBT 1200V 41A 160W TO247AD RoHS: Compliant Min Qty: 400 Container: Bag	Limited Supply - Call	400:$4.6399
IRG4PH40UD2-EP DISTI # IRG4PH40UD2-EP	Infineon Technologies AG	Trans IGBT Chip N-CH 1.2KV 41A 3-Pin(3+Tab) TO-247AD - Rail/Tube (Alt: IRG4PH40UD2-EP) RoHS: Compliant Min Qty: 400 Container: Tube	Americas - 0	400:$3.5900 800:$3.3900 1600:$3.2900 2400:$3.1900 4000:$3.0900
IRG4PH40UD2-EP DISTI # 942-IRG4PH40UD2-EP	Infineon Technologies AG	IGBT Transistors 1200V UltraFast 5-40kHz RoHS: Compliant	400	1:$6.1900 10:$5.5900 25:$5.3300 100:$4.6300 250:$4.4200 500:$4.0300
IRG4PH40UD2-EP DISTI # 9074909P	Infineon Technologies AG	IGBT N-CHANNEL 1200V 41A TO-247AD, TU	218	10:£3.7550 50:£3.6800 100:£3.6050 250:£3.4450
IRG4PH40UD2-EP DISTI # XSLY00000001100	INFINEON/IR	TO-247AC RoHS: Compliant	720	425:$1.7000 720:$1.5900

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