IRGR3B60KD2PBF

Mfr. #:: IRGR3B60KD2PBF
制造商:: Infineon Technologies
描述:: IGBT Transistors 600V Non Punch Thru Short Cir Ratd IGBT
生命周期:: 制造商新产品。
数据表:: IRGR3B60KD2PBF 数据表
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ECAD Model:

产品属性
属性值

制造商: 英飞凌科技

产品分类: IGBT - 单

系列: -

打包: 管替代包装

单位重量: 0.012346 oz

安装方式: 贴片/贴片

包装盒: TO-252-3, DPak (2 Leads + Tab), SC-63

输入类型: 标准

安装型: 表面贴装

供应商-设备-包: D-Pak

配置: 单身的

最大功率: 52W

反向恢复时间trr: 77ns

电流收集器 Ic-Max: 7.8A

电压收集器发射极击穿最大值: 600V

IGBT型: 不扩散条约

电流收集器脉冲Icm: 15.6A

Vce-on-Max-Vge-Ic: 2.4V @ 15V, 3A

开关能源: 62μJ (on), 39μJ (off)

栅极电荷: 13nC

Td-on-off-25°C: 18ns/110ns

测试条件: 400V, 3A, 100 Ohm, 15V

钯功耗: 52 W

最低工作温度: - 55 C

集电极-发射极-电压-VCEO-Max: 600 V

集电极-发射极-饱和-电压: 2.4 V

25-C 时的连续集电极电流: 7.8 A

最大栅极发射极电压: +/- 20 V

Tags: IRGR3B60KD2, IRGR3B60K, IRGR3, IRGR, IRG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRGR3B60KD2PBF 描述

***ernational Rectifier: 600V Non Punch Through, Short Circuit Rated IGBT in a D-Pak package.

***ure Electronics: N-Channel 600 V 4.2 A IGBT with Ultrafast Soft Recovery Diode - DPAK

***ied Electronics & Automation: 600V NON PUNCH THROUGH, SHORT CIRCUIT RATED IGBT IN A D-PAK PACKAGE.

***ineon: Target Applications: Dishwasher; Fan; Lighting HID; Refridgeration

***ical: Trans IGBT Chip N-CH 600V 7.8A 3-Pin(2+Tab) DPAK

***i-Key: IGBT UFAST 600V 7.8A DPAK

***ukat: 600V 7,8A 52W TO252AA

***ark: IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:7.8A; Collector Emitter Saturation Voltage, Vce(sat):2.4V; Power Dissipation, Pd:52W; Package/Case:D-PAK; C-E Breakdown Voltage:600V ;RoHS Compliant: Yes

***nell: IGBT, 600V, 7.8A, D-PAK; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current, Ic Continuous a Max:7.8A; Voltage, Vce Sat Max:2.4V; Power Dissipation:52W; Case Style:D-PAK; Termination Type:SMD; Current, Icm Pulsed:15.6A; Power, Pd:52W; Time, Fall:80ns; Time, Fall Max:80ns; Time, Rise:15ns; Voltage, Vceo:600V

Market price

型号	制造商	描述	库存	价格
IRGR3B60KD2PBF DISTI # IRGR3B60KD2PBF-ND	Infineon Technologies AG	IGBT 600V 7.8A 52W DPAK RoHS: Compliant Min Qty: 3000 Container: Tube	Limited Supply - Call
IRGR3B60KD2PBF DISTI # 70018501	Infineon Technologies AG	600V Non Punch Through,Short Circut Rated IGBT IN A D-PAK Package. RoHS: Compliant	0	675:$2.7100 1350:$2.6560 3375:$2.5750 6750:$2.4660 16875:$2.3040
IRGR3B60KD2PBF DISTI # 942-IRGR3B60KD2PBF	Infineon Technologies AG	IGBT Transistors 600V Non Punch Thru Short Cir Ratd IGBT RoHS: Compliant	3061	1:$1.5400 10:$1.3100 100:$1.0500 500:$0.9150 1000:$0.7590

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