IRF3305PBF

IRF3305PBF
Mfr. #:
IRF3305PBF
制造商:
Infineon / IR
描述:
MOSFET 55V 1 N-CH HEXFET 8mOhms 100nC
生命周期:
制造商新产品。
数据表:
IRF3305PBF 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF3305PBF DatasheetIRF3305PBF Datasheet (P4-P6)IRF3305PBF Datasheet (P7-P9)
ECAD Model:
产品属性
属性值
制造商:
英飞凌
产品分类:
MOSFET
RoHS:
Y
技术:
安装方式:
通孔
包装/案例:
TO-220-3
通道数:
1 Channel
晶体管极性:
N通道
Vds - 漏源击穿电压:
55 V
Id - 连续漏极电流:
140 A
Rds On - 漏源电阻:
8 mOhms
Vgs - 栅源电压:
20 V
Qg - 门电荷:
100 nC
最低工作温度:
- 55 C
最高工作温度:
+ 175 C
Pd - 功耗:
330 W
配置:
单身的
频道模式:
增强
打包:
管子
高度:
15.65 mm
长度:
10 mm
晶体管类型:
1 N-Channel
类型:
汽车MOSFET
宽度:
4.4 mm
品牌:
英飞凌/红外
秋季时间:
34 ns
产品类别:
MOSFET
上升时间:
88 ns
出厂包装数量:
50
子类别:
MOSFET
典型关断延迟时间:
43 ns
典型的开启延迟时间:
16 ns
第 # 部分别名:
SP001576766
单位重量:
0.211644 oz
Tags
IRF3305, IRF330, IRF33, IRF3, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***ical
Trans MOSFET N-CH 55V 140A 3-Pin(3+Tab) TO-220AB Tube
***ied Electronics & Automation
MOSFET, 55V, 140A, 8 MOHM, 100 NC QG, TO-220AB
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:75A; On Resistance, Rds(on):8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes
型号 制造商 描述 库存 价格
IRF3305PBF
DISTI # IRF3305PBF-ND
Infineon Technologies AGMOSFET N-CH 55V 75A TO-220AB
RoHS: Compliant
Min Qty: 3000
Container: Tube
Limited Supply - Call
    IRF3305PBF
    DISTI # 70018187
    Infineon Technologies AGMOSFET,55V,140A,8 MOHM,100 NC QG,TO-220AB
    RoHS: Compliant
    0
    • 3000:$3.0400
    • 6000:$2.9790
    • 15000:$2.8880
    • 30000:$2.7660
    • 75000:$2.5840
    IRF3305PBF
    DISTI # 942-IRF3305PBF
    Infineon Technologies AGMOSFET 55V 1 N-CH HEXFET 8mOhms 100nC
    RoHS: Compliant
    0
      IRF3305PBFInternational Rectifier 
      RoHS: Compliant
      Europe - 350
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        Mfr.#: IRF3315LCL

        OMO.#: OMO-IRF3315LCL-1190

        全新原装
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        全新原装
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        Mfr.#: IRF3315STRRPBF

        OMO.#: OMO-IRF3315STRRPBF-INFINEON-TECHNOLOGIES

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        IRF3305PBF

        Mfr.#: IRF3305PBF

        OMO.#: OMO-IRF3305PBF-INFINEON-TECHNOLOGIES

        RF Bipolar Transistors MOSFET 55V 1 N-CH HEXFET 8mOhms 100nC
        可用性
        库存:
        Available
        订购:
        2500
        输入数量:
        IRF3305PBF的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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