SIS424DN-T1-GE3

SIS424DN-T1-GE3
Mfr. #:
SIS424DN-T1-GE3
制造商:
Vishay / Siliconix
描述:
MOSFET RECOMMENDED ALT 781-SIS410DN-T1-GE3
生命周期:
制造商新产品。
数据表:
SIS424DN-T1-GE3 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
产品属性
属性值
制造商:
威世
产品分类:
MOSFET
RoHS:
Y
技术:
商品名:
TrenchFET、PowerPAK
打包:
卷轴
系列:
情报局
品牌:
威世 / Siliconix
产品类别:
MOSFET
出厂包装数量:
3000
子类别:
MOSFET
第 # 部分别名:
SIS424DN-GE3
Tags
SIS42, SIS4, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 20V 19.6A 8-Pin PowerPAK 1212 T/R
***i-Key
MOSFET N-CH 20V 35A PPAK 1212-8
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:19.6A; On Resistance Rds(On):0.0053Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V Rohs Compliant: Yes
型号 制造商 描述 库存 价格
SIS424DN-T1-GE3
DISTI # SIS424DN-T1-GE3-ND
Vishay SiliconixMOSFET N-CH 20V 35A PPAK 1212-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 3000:$0.4389
SIS424DN-T1-GE3
DISTI # SIS424DN-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 20V 19.6A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS424DN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
    SIS424DN-T1-GE3.
    DISTI # 61AC1927
    Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:19.6A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.0053ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Power Dissipation Pd:39W,No. of Pins:8Pins RoHS Compliant: Yes0
    • 1:$0.5100
    • 6000:$0.4950
    • 12000:$0.4750
    • 18000:$0.4610
    • 30000:$0.4490
    SIS424DN-T1-GE3
    DISTI # 781-SIS424DN-T1-GE3
    Vishay IntertechnologiesMOSFET 20V 35A 39W
    RoHS: Compliant
    0
      SIS424DN-T1-GE3Vishay IntertechnologiesMOSFET 20V 35A 39W
      RoHS: Compliant
      Americas -
        图片 型号 描述
        SIS424DN-T1-GE3

        Mfr.#: SIS424DN-T1-GE3

        OMO.#: OMO-SIS424DN-T1-GE3

        MOSFET RECOMMENDED ALT 781-SIS410DN-T1-GE3
        SIS424DN-T1-GE3

        Mfr.#: SIS424DN-T1-GE3

        OMO.#: OMO-SIS424DN-T1-GE3-VISHAY

        RF Bipolar Transistors MOSFET 20V 35A 39W
        可用性
        库存:
        Available
        订购:
        5500
        输入数量:
        SIS424DN-T1-GE3的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
        参考价格(美元)
        数量
        单价
        小计金额
        1
        US$0.99
        US$0.99
        10
        US$0.82
        US$8.20
        100
        US$0.63
        US$62.90
        500
        US$0.54
        US$270.50
        1000
        US$0.43
        US$427.00
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