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SGH30N60RUFDTU

SGH30N60RUFDTU
Mfr. #:
SGH30N60RUFDTU
制造商:
ON Semiconductor / Fairchild
描述:
IGBT Transistors Dis Short Circuit Rated IGBT
生命周期:
制造商新产品。
数据表:
SGH30N60RUFDTU 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商：
安森美半导体
产品分类：
IGBT晶体管
RoHS：
Y
技术：
硅
包装/案例：
TO-3P-3
安装方式：
通孔
配置：
单身的
集电极-发射极电压 VCEO 最大值：
600 V
集电极-发射极饱和电压：
2.2 V
最大栅极发射极电压：
20 V
25 C 时的连续集电极电流：
48 A
Pd - 功耗：
235 W
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
系列：
SGH30N60RUFD
打包：
管子
连续集电极电流 Ic 最大值：
48 A
高度：
18.9 mm
长度：
15.8 mm
宽度：
5 mm
品牌：
安森美半导体/飞兆半导体
连续集电极电流：
48 A
栅极-发射极漏电流：
+/- 100 nA
产品类别：
IGBT晶体管
出厂包装数量：
450
子类别：
IGBT
第 # 部分别名：
SGH30N60RUFDTU_NL
单位重量：
0.225789 oz
Tags
SGH30N60RUFD, SGH30N60R, SGH30N6, SGH30, SGH3, SGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Transistor,Igbt,N-Chan+Diode,600V V(Br)Ces,48A I(C),To-247Var Rohs Compliant: Yes
***et
Trans IGBT Chip N-CH 600V 48A 3-Pin(3+Tab) TO-3P(N) Rail
***rchild Semiconductor
Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.
***p One Stop Global
Trans IGBT Chip N-CH 600V 48A 250000mW 3-Pin(3+Tab) TO-220AB Tube
***ineon SCT
600 V, 24 A IGBT with anti-parallel diode in TO-220AB package, TO220COPAK-3, RoHS
***(Formerly Allied Electronics)
600V ULTRAFAST COPACK TRENCH IGBT IN A TO-220AB PACKAGE | Infineon IRGB4062DPBF
***ineon
Target Applications: Air Conditioner; Fan; PFC; Pump; Solar; UPS; Washing Machine; Welding
***ure Electronics
IRGB4062DPbF Series 600 V 24 A N-Channel Bipolar Transistor IGBT - TO-220AB
***trelec
IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.04 V Current release time: 29 ns Power dissipation: 250 W
***ark
Dc Collector Current:48A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:250W; Collector Emitter Voltage V(Br)Ceo:600V; No. Of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Msl:- Rohs Compliant: Yes |Infineon IRGB4062DPBF.
***ment14 APAC
IGBT, COPAK, TO-220; Transistor Type:IGBT; DC Collector Current:48A; Collector Emitter Voltage Vces:1.65V; Power Dissipation Pd:250W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:48A; Package / Case:TO-220; Power Dissipation Max:250W; Power Dissipation Pd:250W; Power Dissipation Pd:250W; Pulsed Current Icm:96A; Rise Time:22ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***p One Stop Global
Trans IGBT Chip N-CH 600V 48A 250000mW 3-Pin(3+Tab) TO-247AC Tube
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.04 V Current release time: 29 ns Power dissipation: 250 W
***nell
IGBT, COPAK, TO-247; DC Collector Current: 48A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Ic Continuous a Max: 48A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Power Dissipation Max: 250W; Pulsed Current Icm: 96A; Rise Time: 22ns; Termination Type: Through Hole; Transistor Polarity: N Channel; Transistor Type: IGBT; Voltage Vces: 600V
***ineon
Target Applications: Air Conditioner; Fan; PFC; Pump; Solar; UPS; Washing Machine; Welding
***-Wing Technology
Tube Through Hole Trench ROHS3Compliant IGBT Transistor 1.95V @ 15V 24A 48A 250W 89ns
***nell
IGBT,N CH,DIODE,600V,48A,D2PAK; Transistor Type:IGBT; DC Collector Current:48A; Collector Emitter Voltage Vces:1.6V; Power Dissipation Pd:250W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:250W
***ical
Trans IGBT Chip N-CH 600V 60A 150000mW 3-Pin(3+Tab) TO-220AB Tube
***icroelectronics
600 V, 30 A high speed trench gate field-stop IGBT
***nell
IGBT, 600V, 60A, TO-220-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 260W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018)
***ical
Trans IGBT Chip N-CH 600V 40A 100000mW 3-Pin(3+Tab) TO-220AB Tube
***r Electronics
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***icroelectronics
600 V, 20 A high speed trench gate field-stop IGBT
***ical
Trans IGBT Chip N-CH 600V 40A 167000mW 3-Pin(3+Tab) TO-220AB Tube
***icroelectronics
Trench gate field-stop IGBT, V series 600 V, 20 A very high speed
***r Electronics
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
型号 制造商 描述 库存 价格
SGH30N60RUFDTU
DISTI # SGH30N60RUFDTU-ND		ON SemiconductorIGBT 600V 48A 235W TO3P
RoHS: Compliant
Min Qty: 450
Container: Tube		Limited Supply - Call
  • 450:$3.1408
SGH30N60RUFDTU
DISTI # SGH30N60RUFDTU		ON SemiconductorTrans IGBT Chip N-CH 600V 48A 3-Pin(3+Tab) TO-3P(N) Rail (Alt: SGH30N60RUFDTU)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€2.0900
  • 10:€1.8900
  • 25:€1.8900
  • 50:€1.7900
  • 100:€1.7900
  • 500:€1.6900
  • 1000:€1.6900
SGH30N60RUFDTU
DISTI # SGH30N60RUFDTU		ON SemiconductorTrans IGBT Chip N-CH 600V 48A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: SGH30N60RUFDTU)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 450:$1.8900
  • 900:$1.8900
  • 1800:$1.7900
  • 2700:$1.7900
  • 4500:$1.7900
SGH30N60RUFDTU
DISTI # 512-SGH30N60RUFDTU		ON SemiconductorIGBT Transistors Dis Short Circuit Rated IGBT
RoHS: Compliant		0
    图片 型号 描述
    SGH30N60

    Mfr.#: SGH30N60

    OMO.#: OMO-SGH30N60-1190

    		 全新原装
    SGH30N60DUFDTU

    Mfr.#: SGH30N60DUFDTU

    OMO.#: OMO-SGH30N60DUFDTU-1190

    		 全新原装
    SGH30N60RUF

    Mfr.#: SGH30N60RUF

    OMO.#: OMO-SGH30N60RUF-1190

    		 全新原装
    SGH30N60RUF G30N60

    Mfr.#: SGH30N60RUF G30N60

    OMO.#: OMO-SGH30N60RUF-G30N60-1190

    		 全新原装
    SGH30N60RUFD G30N60RUF

    Mfr.#: SGH30N60RUFD G30N60RUF

    OMO.#: OMO-SGH30N60RUFD-G30N60RUF-1190

    		 全新原装
    SGH30N60RUFD G30N60RUFD

    Mfr.#: SGH30N60RUFD G30N60RUFD

    OMO.#: OMO-SGH30N60RUFD-G30N60RUFD-1190

    		 全新原装
    SGH30N60RUFDTU(SG)

    Mfr.#: SGH30N60RUFDTU(SG)

    OMO.#: OMO-SGH30N60RUFDTU-SG--1190

    		 全新原装
    SGH30N60RUFTU

    Mfr.#: SGH30N60RUFTU

    OMO.#: OMO-SGH30N60RUFTU-ON-SEMICONDUCTOR

    		 IGBT 600V 48A 235W TO3P
    SGH30N60TU

    Mfr.#: SGH30N60TU

    OMO.#: OMO-SGH30N60TU-1190

    		 全新原装
    SGH30N60RUFDTU

    Mfr.#: SGH30N60RUFDTU

    OMO.#: OMO-SGH30N60RUFDTU-ON-SEMICONDUCTOR

    		 IGBT Transistors Dis Short Circuit Rated IGBT
    可用性
    库存:
    Available
    订购:
    5000
    输入数量:
    SGH30N60RUFDTU的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格（美元）
    数量
    单价
    小计金额
    1
    US$3.86
    US$3.86
    10
    US$3.27
    US$32.70
    100
    US$2.84
    US$284.00
    250
    US$2.69
    US$672.50
    500
    US$2.42
    US$1 210.00
    1000
    US$2.04
    US$2 040.00
    2500
    US$1.94
    US$4 850.00
    5000
    US$1.86
    US$9 300.00
    由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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