FF600R12ME4EB11BOSA1

FF600R12ME4EB11BOSA1
Mfr. #:
FF600R12ME4EB11BOSA1
制造商:
Infineon Technologies
描述:
IGBT Modules
生命周期:
制造商新产品。
数据表:
FF600R12ME4EB11BOSA1 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
FF600R12ME4EB11BOSA1 更多信息
产品属性
属性值
制造商:
英飞凌
产品分类:
IGBT 模块
RoHS:
Y
产品:
IGBT 硅模块
配置:
公共发射器
集电极-发射极电压 VCEO 最大值:
1200 V
集电极-发射极饱和电压:
1.75 V
25 C 时的连续集电极电流:
600 A
栅极-发射极漏电流:
400 nA
Pd - 功耗:
20 mW
包装/案例:
152 mm x 62.5 mm x 20.5 mm
最低工作温度:
- 40 C
最高工作温度:
+ 150 C
打包:
托盘
品牌:
英飞凌科技
安装方式:
压合
最大栅极发射极电压:
15 V
产品类别:
IGBT 模块
出厂包装数量:
6
子类别:
IGBT
第 # 部分别名:
SP001671626
Tags
FF600R12ME4, FF600R12M, FF600R12, FF600R1, FF600, FF60, FF6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
EconoDUAL3 Module with Trench/Fieldstop IGBT4 and Emitter Controlled Diode and NTC 1200V Tray
***ark
Igbt Mod, Dual N-Ch, 1.2Kv, 600A; Transistor Polarity:dual N Channel; Dc Collector Current:600A; Collector Emitter Saturation Voltage Vce(On):1.75V; Power Dissipation Pd:-; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes
***ineon
Summary of Features: EconoDUAL 3 with Common Emitter topology; Low VCEsat; Tvj op = 150C; VISO = 3.4kVrms 1 min ( 4.8kV DC 1 min); Standard Housing; PressFIT control pins and screw power terminals; Compact and robust design with molded terminals | Benefits: 3-level NPC2 configuration based on established EconoDUAL 3 housing; In line with UL requirements for 1500V solar inverters; Compact modules; Easy and most reliable assembly; No plugs and cables required | Target Applications: solar; ups; drives
Infineon EconoDUAL™ 3 with Common Emitter
Infineon EconoDUAL™ 3 with Common Emitter are suited for 1500V and 1000V solar inverters, and are dedicated modules for 3-level NPC2 topologies. The EconoDUAL™ 3 is widely used in 1000V systems for solar applications and provides a new solution for relying on the established EconoDUAL™ 3 housing in future designs. Two new EconoDUAL™ 3 modules with Common Emitter configuration are available, the FF450R12ME4E_B11 and FF600R12ME4E_B11. Both are equipped with the proven PressFIT housing, enabling for fast and cost efficient assembly in the production line.
型号 制造商 描述 库存 价格
FF600R12ME4EB11BOSA1
DISTI # V99:2348_18787569
Infineon Technologies AGMEDIUM POWER ECONO1
  • 1:$242.6500
FF600R12ME4EB11BOSA1
DISTI # FF600R12ME4EB11BOSA1-ND
Infineon Technologies AGMOD IGBT MED PWR ECONOD-5
RoHS: Compliant
Min Qty: 1
Container: Tray
6In Stock
  • 12:$232.6908
  • 1:$242.9600
FF600R12ME4EB11BOSA1
DISTI # 31575567
Infineon Technologies AGMEDIUM POWER ECONO6
  • 25:$218.9385
  • 10:$222.0570
  • 6:$227.7000
FF600R12ME4EB11BOSA1
DISTI # 30304246
Infineon Technologies AGMEDIUM POWER ECONO1
  • 1:$242.6500
FF600R12ME4EB11BOSA1
DISTI # FF600R12ME4EB11BOSA1
Infineon Technologies AGEconoDUAL3 Module with Trench/Fieldstop IGBT4 and Emitter Controlled Diode and NTC 1200V Tray - Trays (Alt: FF600R12ME4EB11BOSA1)
RoHS: Compliant
Min Qty: 6
Container: Tray
Americas - 0
  • 60:$206.0900
  • 36:$211.1900
  • 24:$216.4900
  • 12:$222.1900
  • 6:$225.0900
FF600R12ME4EB11BOSA1
DISTI # SP001671626
Infineon Technologies AGEconoDUAL3 Module with Trench/Fieldstop IGBT4 and Emitter Controlled Diode and NTC 1200V Tray (Alt: SP001671626)
RoHS: Compliant
Min Qty: 1
Container: Tray
Europe - 0
  • 1000:€204.7900
  • 500:€207.6900
  • 100:€210.0900
  • 50:€213.7900
  • 25:€225.0900
  • 10:€227.4900
  • 1:€234.4900
FF600R12ME4EB11BOSA1
DISTI # 93AC7011
Infineon Technologies AGIGBT MOD, DUAL N-CH, 1.2KV, 600A,Transistor Polarity:Dual N Channel,DC Collector Current:600A,Collector Emitter Saturation Voltage Vce(on):1.75V,Power Dissipation Pd:-,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case RoHS Compliant: Yes3
  • 25:$235.1200
  • 10:$238.4600
  • 5:$244.5300
  • 1:$250.5600
FF600R12ME4EB11BOSA1
DISTI # 726-FF600R12ME4EB11
Infineon Technologies AGIGBT Modules
RoHS: Compliant
8
  • 1:$248.0800
  • 5:$242.1100
  • 10:$236.1000
  • 25:$232.7900
FF600R12ME4EB11BOSA1
DISTI # 2986369
Infineon Technologies AGIGBT MOD, DUAL N-CH, 1.2KV, 600A
RoHS: Compliant
3
  • 1:$349.4200
FF600R12ME4EB11BOSA1
DISTI # 2986369
Infineon Technologies AGIGBT MOD, DUAL N-CH, 1.2KV, 600A3
  • 5:£169.0000
  • 1:£180.0000
图片 型号 描述
FP150R12KT4

Mfr.#: FP150R12KT4

OMO.#: OMO-FP150R12KT4

IGBT Modules
FP150R12KT4

Mfr.#: FP150R12KT4

OMO.#: OMO-FP150R12KT4-1190

Trans IGBT Module N-CH 1.2KV 150A 43-Pin (Alt: FP150R12KT4)
可用性
库存:
14
订购:
1997
输入数量:
FF600R12ME4EB11BOSA1的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$248.08
US$248.08
5
US$242.11
US$1 210.55
10
US$236.10
US$2 361.00
25
US$232.79
US$5 819.75
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