MR2A16AYS35R

Mfr. #:: MR2A16AYS35R
制造商:: Everspin Technologies
描述:: NVRAM 4Mb 3.3V 35ns 256Kx16 Prallel MRAM
生命周期:: 制造商新产品。
数据表:: MR2A16AYS35R 数据表
交货:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:: MR2A16AYS35R 更多信息

产品属性
属性值

制造商: Everspin 技术公司

产品分类: 记忆

系列: MR2A16A

打包: 卷带 (TR) 替代包装

安装方式: 贴片/贴片

包装盒: TSOP-44

工作温度: 0°C ~ 70°C (TA)

界面: 平行线

电压供应: 3 V ~ 3.6 V

供应商-设备-包: 44-TSOP2 (10.2x18.4)

内存大小: 4M (256K x 16)

内存型: MRAM（磁阻RAM）

速度: 35ns

访问时间: 35 ns

格式化内存: 内存

最高工作温度: + 70 C

最低工作温度: 0 C

工作电源电流: 105 mA

接口类型: 平行线

组织: 256 k x 16

数据总线宽度: 16 bit

最大电源电压: 3.6 V

电源电压最小值: 3 V

Tags: MR2A1, MR2A, MR2

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MR2A16AYS35R 评级和评论

M***r

Normal board, tracked

2019-07-17

M***l

works as expected. great. super fast shipping.

2019-05-14

A***a

According to the order.2 months for delivery.

2019-04-29

MR2A16AYS35R 描述

***ure Electronics: 4Mb, 256Kx16, 44-TSOP, 3.3V, 0 to +70C, T&R,

***et Europe: NVRAM MRAM Parallel 4M-Bit 3.3V 44-Pin TSOP-II T/R

***i-Key: IC RAM 4MBIT PARALLEL 44TSOP2

MR2A16AYS35R 更多信息

MR2A08A / MR2A16A 4Mb Parallel MRAM: Everspin Technologies MR2A08A and MR2A16A 4Mb Parallel MRAM devices offer SRAM compatible 35ns read/write timing with unlimited endurance. The MR2A08A series products are 4,194,304-bit Magnetoresistive Random Access Memory (MRAM) devices organized as 524,288 words of 8 bits.

Magnetoresistive Random Access Memory (MRAM): Everspin Technologies Magnetoresistive Random Access Memory (MRAM) uses a 1 Transistor – 1 Magnetic Tunnel Junction (1T-1MTJ) architecture. These MRAM devices offer significantly long Data Retention (20+ years) and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.

Everspin MRAM

Market price

型号	制造商	描述	库存	价格
MR2A16AYS35R DISTI # MR2A16AYS35REV-ND	Everspin Technologies	IC RAM 4M PARALLEL 44TSOP2 RoHS: Compliant Min Qty: 1500 Container: Tape & Reel (TR)	Temporarily Out of Stock	1500:$16.5053
MR2A16AYS35R DISTI # MR2A16AYS35R	Everspin Technologies	NVRAM MRAM Parallel 4M-Bit 3.3V 44-Pin TSOP-II T/R (Alt: MR2A16AYS35R) RoHS: Compliant Min Qty: 1500 Container: Tape and Reel	Europe - 0	1500:€17.9900 3000:€17.1900 6000:€16.5900 9000:€15.3900 15000:€14.3900

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