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FQI4N90TU

FQI4N90TU
Mfr. #:
FQI4N90TU
制造商:
ON Semiconductor
描述:
IGBT Transistors MOSFET 900V N-Channel QFET
生命周期:
制造商新产品。
数据表:
FQI4N90TU 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
产品属性
属性值
制造商
仙童
产品分类
FET - 单
打包
管子
部分别名
FQI4N90TU_NL
单位重量
0.073511 oz
安装方式
通孔
包装盒
I2PAK-3
技术
硅
通道数
1 Channel
配置
单身的
晶体管型
1 N-Channel
钯功耗
3.13 W
最高工作温度
+ 150 C
最低工作温度
- 55 C
秋季时间
40 ns
上升时间
70 ns
VGS-栅极-源极-电压
30 V
Id 连续漏极电流
4.2 A
Vds-漏-源-击穿电压
900 V
Rds-On-Drain-Source-Resistance
3.3 Ohms
晶体管极性
N通道
典型关断延迟时间
45 ns
典型开启延迟时间
25 ns
正向跨导最小值
3.5 S
通道模式
增强
Tags
FQI4N, FQI4, FQI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Transistor,mosfet,n-Channel,900V V(Br)Dss,4.2A I(D),to-262Aa Rohs Compliant: Yes
***emi
N-Channel Power MOSFET, QFET®, 900 V, 4.2 A, 3.3 Ω, I2PAK
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
型号 制造商 描述 库存 价格
FQI4N90TU
DISTI # FQI4N90TU-ND		ON SemiconductorMOSFET N-CH 900V 4.2A I2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tube		Temporarily Out of Stock
  • 1000:$1.2447
FQI4N90TU
DISTI # FQI4N90TU		ON SemiconductorTrans MOSFET N-CH 900V 4.2A 3-Pin(3+Tab) I2PAK Rail (Alt: FQI4N90TU)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€1.2029
  • 10:€1.0939
  • 25:€1.0029
  • 50:€0.9629
  • 100:€0.9259
  • 500:€0.8909
  • 1000:€0.8589
FQI4N90TU
DISTI # FQI4N90TU		ON SemiconductorTrans MOSFET N-CH 900V 4.2A 3-Pin(3+Tab) I2PAK Rail - Rail/Tube (Alt: FQI4N90TU)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$0.8869
  • 2000:$0.8809
  • 4000:$0.8699
  • 6000:$0.8579
  • 10000:$0.8369
FQI4N90TU
DISTI # 82C4156		ON SemiconductorTRANSISTOR,MOSFET,N-CHANNEL,900V V(BR)DSS,4.2A I(D),TO-262AA ROHS COMPLIANT: YES0
  • 5000:$1.0200
  • 2500:$1.0500
  • 1000:$1.3000
  • 500:$1.4500
  • 100:$1.5600
  • 10:$1.9500
  • 1:$2.2900
FQI4N90TUON Semiconductor 
RoHS: Not Compliant		9000
  • 1000:$1.6200
  • 500:$1.7000
  • 100:$1.7700
  • 25:$1.8500
  • 1:$1.9900
FQI4N90TUFairchild Semiconductor Corporation 
RoHS: Not Compliant		842
  • 1000:$1.6200
  • 500:$1.7000
  • 100:$1.7700
  • 25:$1.8500
  • 1:$1.9900
FQI4N90TU
DISTI # 512-FQI4N90TU		ON SemiconductorMOSFET 900V N-Channel QFET
RoHS: Compliant		287
  • 1:$2.5000
  • 10:$2.1300
  • 100:$1.7000
  • 500:$1.4900
  • 1000:$1.2400
  • 2500:$1.1500
  • 5000:$1.1100
图片 型号 描述
FQI4N90TU

Mfr.#: FQI4N90TU

OMO.#: OMO-FQI4N90TU

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FQI4N90TU

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OMO.#: OMO-FQI4N90TU-ON-SEMICONDUCTOR

 IGBT Transistors MOSFET 900V N-Channel QFET
可用性
库存:
Available
订购:
1000
输入数量:
FQI4N90TU的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$1.43
US$1.43
10
US$1.36
US$13.62
100
US$1.29
US$129.05
500
US$1.22
US$609.40
1000
US$1.15
US$1 147.10
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