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MSC025SMA120B

MSC025SMA120B
Mfr. #:
MSC025SMA120B
制造商:
Microchip / Microsemi
描述:
MOSFET UNRLS, FG, SIC MOSFET, TO-247
生命周期:
制造商新产品。
数据表:
MSC025SMA120B 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
MSC025SMA120B 更多信息
产品属性
属性值
制造商：
微芯片
产品分类：
MOSFET
RoHS：
Y
技术：
碳化硅
安装方式：
通孔
包装/案例：
TO-247-3
晶体管极性：
N通道
Vds - 漏源击穿电压：
1.2 kV
Rds On - 漏源电阻：
31 mOhms
最低工作温度：
- 55 C
最高工作温度：
+ 175 C
打包：
管子
品牌：
微芯片/Microsemi
产品类别：
MOSFET
出厂包装数量：
1
子类别：
MOSFET
Tags
MSC025, MSC02, MSC0, MSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SiC Schottky Barrier Diodes
Microsemi / Microchip SiC Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon power diodes. SiC (Silicon Carbide) Barrier Diodes are comprised of Silicon (Si) and Carbon (C). Compared to Silicon-only devices, SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity. SiC Schottky Diodes feature zero forward and reverse recovery charge, which reduces diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.
Next Generation SiC MOSFETs
Microsemi / Microchip Next Generation Silicon Carbide (SiC) MOSFETs provide good dynamic and thermal performance compared to the Silicon (Si) power MOSFETs. These MOSFETs come with low capacitances, low gate charge, fast switching speed, and good avalanche ruggedness. The SiC MOSFETs are capable of stable operation at 175°C high junction temperature. These MOSFETs provide high-efficiency with low switching losses. The SiC MOSFETs does not require any freewheeling diodes and reduces the system cost. Typical applications include smart grid transmission and distribution, induction heating and welding, and power supply as well as distribution.
图片 型号 描述
LSIC1MO120E0160

Mfr.#: LSIC1MO120E0160

OMO.#: OMO-LSIC1MO120E0160

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UF3C120040K3S

Mfr.#: UF3C120040K3S

OMO.#: OMO-UF3C120040K3S

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STPSC15H12D

Mfr.#: STPSC15H12D

OMO.#: OMO-STPSC15H12D

 Schottky Diodes & Rectifiers 1200V Power Schottky Silicon Carbide Diode
CRD-5FF0912P

Mfr.#: CRD-5FF0912P

OMO.#: OMO-CRD-5FF0912P

 Power Management IC Development Tools Gate Driver Evaluation Board
LSIC1MO120E0160

Mfr.#: LSIC1MO120E0160

OMO.#: OMO-LSIC1MO120E0160-LITTELFUSE

 1200V/160mohm SiC MOSFET TO-247-3L
RC0201FR-0724R9L

Mfr.#: RC0201FR-0724R9L

OMO.#: OMO-RC0201FR-0724R9L-YAGEO

 Res Thick Film 0201 24.9 Ohm 1% 0.05W(1/20W) ±200ppm/C Epoxy Pad SMD T/R
CRD-5FF0912P

Mfr.#: CRD-5FF0912P

OMO.#: OMO-CRD-5FF0912P-WOLFSPEED

 EVAL BOARD FOR C3M0120090J
STPSC15H12D

Mfr.#: STPSC15H12D

OMO.#: OMO-STPSC15H12D-STMICROELECTRONICS

 DIODE SCHOTTKY 1.2KV 15A TO220AC
RC0201FR-0715RL

Mfr.#: RC0201FR-0715RL

OMO.#: OMO-RC0201FR-0715RL-YAGEO

 Thick Film Resistors - SMD 15 OHM 1%
RC1206FR-072R49L

Mfr.#: RC1206FR-072R49L

OMO.#: OMO-RC1206FR-072R49L-YAGEO

 Thick Film Resistors - SMD 1/4W 2.49 Ohms 1%
可用性
库存:
Available
订购:
4000
输入数量:
MSC025SMA120B的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$59.55
US$59.55
2
US$58.47
US$116.94
5
US$57.02
US$285.10
10
US$56.07
US$560.70
25
US$55.38
US$1 384.50
50
US$52.07
US$2 603.50
100
US$49.68
US$4 968.00
250
US$44.22
US$11 055.00
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