FCD900N60Z

Mfr. #:: FCD900N60Z
制造商:: ON Semiconductor
描述:: MOSFET N-CH 600V 4.5A TO-252-3
生命周期:: 制造商新产品。
数据表:: FCD900N60Z 数据表
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ECAD Model:

产品属性
属性值

制造商: 仙童

产品分类: FET - 单

打包: 卷轴

单位重量: 0.009184 oz

安装方式: 贴片/贴片

包装盒: TO-252-3

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 N-Channel

钯功耗: 2 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 11.9 ns

上升时间: 5.2 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 4.5 A

Vds-漏-源-击穿电压: 650 V

VGS-th-Gate-Source-Threshold-Voltage: 3.5 V

Rds-On-Drain-Source-Resistance: 900 mOhms

晶体管极性: N通道

典型关断延迟时间: 33.6 ns

典型开启延迟时间: 10.9 ns

Qg-门电荷: 13 nC

正向跨导最小值: 4.6 S

Tags: FCD90, FCD9, FCD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FCD900N60Z 描述

***Semiconductor: N-Channel Power MOSFET, SuperFET® II, FAST, 600 V, 4.5 A, 900 mΩ, DPAK

***ure Electronics: FCD900N60Z Series 600 V 4.5 A N-Channel SuperFET® II Mosfet -TO-252, (D-Pak)

***p One Stop Japan: Trans MOSFET N-CH 600V 4.5A 3-Pin(2+Tab) TO-252 T/R

***et Europe: Trans MOSFET N-CH 600V 4.5A 3-Pin DPAK T/R

***Components: MOSFET N-CH 600V 4.5A SUPERFET II DPAK

***i-Key: MOSFET N-CH 600V 4.5A TO-252-3

***ark: TAPE REEL/SuperFET2 900mohm, TO252

***et: SUPERFET2 900MOHM, TO252

***rchild Semiconductor: SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Market price

型号	制造商	描述	库存	价格
FCD900N60Z DISTI # C1S541901387071	ON Semiconductor	Trans MOSFET N-CH 600V 4.5A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2500	2500:$0.6430
FCD900N60Z DISTI # FCD900N60ZCT-ND	ON Semiconductor	MOSFET N-CH 600V 4.5A TO-252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
FCD900N60Z DISTI # FCD900N60ZDKR-ND	ON Semiconductor	MOSFET N-CH 600V 4.5A TO-252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
FCD900N60Z DISTI # FCD900N60ZTR-ND	ON Semiconductor	MOSFET N-CH 600V 4.5A TO-252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	2500:$0.5698
FCD900N60Z DISTI # FCD900N60Z	ON Semiconductor	Trans MOSFET N-CH 600V 4.5A 3-Pin DPAK T/R (Alt: FCD900N60Z) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
FCD900N60Z DISTI # FCD900N60Z	ON Semiconductor	Trans MOSFET N-CH 600V 4.5A 3-Pin DPAK T/R - Tape and Reel (Alt: FCD900N60Z) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.4829 5000:$0.4799 10000:$0.4739 15000:$0.4679 25000:$0.4559
FCD900N60Z DISTI # 512-FCD900N60Z	ON Semiconductor	MOSFET 600V N-Channel MOSFET RoHS: Compliant	2466	1:$1.2200 10:$1.0400 100:$0.7960 500:$0.7040 1000:$0.5550 2500:$0.4930

图片	型号	描述
	Mfr.#: FCD900N60Z OMO.#: OMO-FCD900N60Z	MOSFET 600V N-Channel MOSFET
	Mfr.#: FCD900N60 OMO.#: OMO-FCD900N60-1190	全新原装
	Mfr.#: FCD900N60Z OMO.#: OMO-FCD900N60Z-ON-SEMICONDUCTOR	MOSFET N-CH 600V 4.5A TO-252-3
	Mfr.#: FCD900N60ZM OMO.#: OMO-FCD900N60ZM-1190	全新原装

FCD900N60Z

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes