IXDN55N120D1

IXDN55N120D1
Mfr. #:
IXDN55N120D1
制造商:
Littelfuse
描述:
IGBT Transistors 55 Amps 1200V
生命周期:
制造商新产品。
数据表:
IXDN55N120D1 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXDN55N120D1 DatasheetIXDN55N120D1 Datasheet (P4)
ECAD Model:
产品属性
属性值
制造商:
IXYS
产品分类:
IGBT晶体管
RoHS:
Y
技术:
包装/案例:
SOT-227B-4
安装方式:
贴片/贴片
配置:
单双发射器
集电极-发射极电压 VCEO 最大值:
1200 V
集电极-发射极饱和电压:
2.3 V
最大栅极发射极电压:
20 V
最低工作温度:
- 40 C
最高工作温度:
+ 150 C
系列:
IXDN55N120
打包:
管子
连续集电极电流 Ic 最大值:
100 A
高度:
9.6 mm
长度:
38.23 mm
宽度:
25.42 mm
品牌:
IXYS
连续集电极电流:
100 A
产品类别:
IGBT晶体管
出厂包装数量:
10
子类别:
IGBT
单位重量:
1.058219 oz
Tags
IXDN55N120D, IXDN55, IXDN5, IXDN, IXD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    S***v
    S***v
    RU

    Thank you!

    2019-04-20
    D***n
    D***n
    TR

    Nice product for you

    2019-02-08
***ure Electronics
IXDN Series 1200 Vce 100 A 100 ns t(on) High Voltage IGBT - SOT-227B
***ark
Igbt, N-Ch, 1.2Kv, 100A, Sot-227B; Transistor Polarity:n Channel; Dc Collector Current:100A; Collector Emitter Saturation Voltage Vce(On):2.3V; Power Dissipation Pd:450W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes
***trelec
Configuration = Single / Continuous Collector Current (Ic) A = 100 / Collector-Emitter Voltage (Vceo) kV = 1.2 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 2.8 / Emitter Leakage Current nA = 500 / Power Dissipation (Pd) W = 450 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 150 / Package Type = SOT-227B / Pins = 4 / Mounting Type = SMD
型号 制造商 描述 库存 价格
IXDN55N120D1
DISTI # IXDN55N120D1-ND
IXYS CorporationIGBT 1200V 100A W/DIODE SOT-227B
RoHS: Compliant
Min Qty: 1
Container: Tube
On Order
  • 250:$22.2575
  • 100:$24.2530
  • 30:$26.0950
  • 10:$28.3980
  • 1:$30.7000
IXDN55N120D1
DISTI # 02AC9794
IXYS CorporationIGBT, N-CH, 1.2KV, 100A, SOT-227B,Transistor Polarity:N Channel,DC Collector Current:100A,Collector Emitter Saturation Voltage Vce(on):2.3V,Power Dissipation Pd:450W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case , RoHS Compliant: Yes2
  • 1:$33.7700
  • 5:$32.0900
  • 10:$31.2400
  • 25:$28.7100
  • 50:$28.0200
  • 100:$26.6800
  • 250:$24.4900
IXDN55N120D1
DISTI # 747-IXDN55N120D1
IXYS CorporationIGBT Transistors 55 Amps 1200V
RoHS: Compliant
0
  • 1:$30.7000
  • 5:$29.1700
  • 10:$28.4000
  • 25:$26.1000
  • 50:$25.4700
  • 100:$24.2500
  • 200:$22.2600
IXDN55N120D1
DISTI # IXDN55N120D1
IXYS Corporation1200V 100A 450W SOT227B
RoHS: Compliant
28
  • 1:€24.7000
  • 5:€20.7000
  • 10:€18.7000
  • 25:€18.0000
IXDN55N120D1
DISTI # 2674741
IXYS CorporationIGBT, N-CH, 1.2KV, 100A, SOT-227B
RoHS: Compliant
2
  • 1:£24.3900
  • 5:£23.1600
  • 10:£20.7400
  • 50:£20.2300
  • 100:£17.6800
IXDN55N120D1
DISTI # 2674741
IXYS CorporationIGBT, N-CH, 1.2KV, 100A, SOT-227B
RoHS: Compliant
2
  • 1:$48.5800
  • 10:$44.9400
  • 30:$41.3000
  • 100:$38.3800
  • 250:$35.2200
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可用性
库存:
370
订购:
2353
输入数量:
IXDN55N120D1的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$30.70
US$30.70
5
US$29.17
US$145.85
10
US$28.39
US$283.90
25
US$26.09
US$652.25
50
US$25.47
US$1 273.50
100
US$24.25
US$2 425.00
200
US$22.25
US$4 450.00
500
US$21.19
US$10 595.00
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