CGHV14250F

CGHV14250F
Mfr. #:
CGHV14250F
制造商:
N/A
描述:
RF JFET Transistors GaN HEMT 1.2-1.4GHz, 250 Watt
生命周期:
制造商新产品。
数据表:
CGHV14250F 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
CGHV14250F 更多信息
产品属性
属性值
制造商:
克里公司
产品分类:
射频 JFET 晶体管
RoHS:
Y
晶体管类型:
HEMT
技术:
氮化镓
获得:
18.6 dB
晶体管极性:
N通道
Vds - 漏源击穿电压:
150 V
Vgs - 栅源击穿电压:
- 10 V to 2 V
Id - 连续漏极电流:
18 A
输出功率:
330 W
最大漏栅电压:
-
最低工作温度:
- 40 C
最高工作温度:
+ 130 C
Pd - 功耗:
-
安装方式:
螺丝安装
包装/案例:
440162
打包:
管子
应用:
-
配置:
单身的
高度:
3.78 mm
长度:
20.45 mm
工作频率:
1.2 GHz to 1.4 GHz
工作温度范围:
-
产品:
氮化镓 HEMT
宽度:
10.29 mm
品牌:
Wolfspeed / 克里
正向跨导 - 最小值:
-
栅源截止电压:
-
班级:
-
开发套件:
CGHV14250F-TB
秋季时间:
-
NF - 噪声系数:
-
P1dB - 压缩点:
-
产品类别:
射频 JFET 晶体管
Rds On - 漏源电阻:
-
上升时间:
-
出厂包装数量:
50
子类别:
晶体管
典型关断延迟时间:
-
Vgs th - 栅源阈值电压:
- 3 V
Tags
CGHV142, CGHV14, CGHV1, CGHV, CGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***o-Tech
- 250W, 1200 - 1400MHz, GaN HEMT Flange Package
***i-Key
RF MOSFET HEMT 50V 440162
***hardson RFPD
RF POWER TRANSISTOR
GaN HEMTs
Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
型号 制造商 描述 库存 价格
CGHV14250F
DISTI # CGHV14250F-ND
WolfspeedRF MOSFET HEMT 50V 440162
RoHS: Compliant
Min Qty: 1
Container: Tube
59In Stock
  • 1:$367.8300
CGHV14250F-TB
DISTI # CGHV14250F-TB-ND
WolfspeedTEST FIXTURE FOR CGHV14250
RoHS: Compliant
Min Qty: 1
Container: Box
5In Stock
  • 1:$550.0000
CGHV14250F
DISTI # 941-CGHV14250F
Cree, Inc.RF JFET Transistors GaN HEMT 1.2-1.4GHz, 250 Watt
RoHS: Compliant
1
  • 1:$367.8300
CGHV14250F-TB
DISTI # 941-CGHV14250F-TB
Cree, Inc.RF Development Tools Test Board without GaN HEMT
RoHS: Not compliant
2
  • 1:$550.0000
图片 型号 描述
CGHV14800F

Mfr.#: CGHV14800F

OMO.#: OMO-CGHV14800F

RF JFET Transistors GaN HEMT 1.2-1.4GHz, 800 Watt
CGHV1J070D-GP4

Mfr.#: CGHV1J070D-GP4

OMO.#: OMO-CGHV1J070D-GP4

RF JFET Transistors GaN HEMT Die DC-18GHz, 70 Watt
CGHV14500-TB

Mfr.#: CGHV14500-TB

OMO.#: OMO-CGHV14500-TB

RF Development Tools Test Board without GaN HEMT
CGHV14500F/P

Mfr.#: CGHV14500F/P

OMO.#: OMO-CGHV14500F-P-1190

全新原装
CGHV14800F

Mfr.#: CGHV14800F

OMO.#: OMO-CGHV14800F-WOLFSPEED

RF MOSFET HEMT 50V 440117
CGHV1J025

Mfr.#: CGHV1J025

OMO.#: OMO-CGHV1J025-1190

全新原装
CGHV1F006S-AMP3

Mfr.#: CGHV1F006S-AMP3

OMO.#: OMO-CGHV1F006S-AMP3-WOLFSPEED

DEMO HEMT TRANS AMP3 CGHV1F006S
CGHV1J025D-GP4

Mfr.#: CGHV1J025D-GP4

OMO.#: OMO-CGHV1J025D-GP4-WOLFSPEED

RF POWER TRANSISTOR
CGHV1J006D

Mfr.#: CGHV1J006D

OMO.#: OMO-CGHV1J006D-318

RF JFET Transistors DC-18GHz 6W GaN Gain@10GHz 17dB
CGHV1J070D

Mfr.#: CGHV1J070D

OMO.#: OMO-CGHV1J070D-318

RF JFET Transistors DC-18GHz 70 Watts Gain 17dB @10GHz
可用性
库存:
Available
订购:
1984
输入数量:
CGHV14250F的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$347.93
US$347.93
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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