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IPW60R017C7XKSA1

IPW60R017C7XKSA1
Mfr. #:
IPW60R017C7XKSA1
制造商:
Infineon Technologies
描述:
HIGH POWER_NEW
生命周期:
制造商新产品。
数据表:
IPW60R017C7XKSA1 数据表
交货:
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IPW60R017C7XKSA1 更多信息
产品属性
属性值
Tags
IPW60R017, IPW60R01, IPW60R0, IPW60, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 17 mOhm 240 nC CoolMOS™ Power Mosfet - TO-247-3
***ark
Mosfet, N-Ch, 600V, 109A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:109A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.015Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ineon
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
型号 制造商 描述 库存 价格
IPW60R017C7XKSA1
DISTI # V99:2348_16141112		Infineon Technologies AGTrans MOSFET N-CH 600V 109A Tube
RoHS: Compliant		0
    IPW60R017C7XKSA1
    DISTI # V36:1790_16141112    		Infineon Technologies AGTrans MOSFET N-CH 600V 109A Tube
    RoHS: Compliant    		0
      IPW60R017C7XKSA1
      DISTI # IPW60R017C7XKSA1-ND      		Infineon Technologies AGHIGH POWER_NEW
      RoHS: Compliant
      Min Qty: 240
      Container: Tube      		Temporarily Out of Stock
      • 240:$17.5997
      IPW60R017C7XKSA1
      DISTI # SP001313542      		Infineon Technologies AGTrans MOSFET N-CH 650V 109A 3-Pin TO-247 Tube (Alt: SP001313542)
      RoHS: Compliant
      Min Qty: 1
      Container: Tube      		Europe - 270
      • 1:€15.2900
      • 10:€13.9900
      • 25:€13.3900
      • 50:€12.8900
      • 100:€12.3900
      • 500:€11.9900
      • 1000:€11.1900
      IPW60R017C7XKSA1
      DISTI # IPW60R017C7XKSA1      		Infineon Technologies AGTrans MOSFET N-CH 650V 109A 3-Pin TO-247 Tube - Rail/Tube (Alt: IPW60R017C7XKSA1)
      RoHS: Compliant
      Min Qty: 240
      Container: Tube      		Americas - 0
      • 240:$14.4900
      • 480:$13.9900
      • 960:$13.4900
      • 1440:$13.0900
      • 2400:$12.7900
      IPW60R017C7XKSA1
      DISTI # 49AC0306      		Infineon Technologies AGMOSFET, N-CH, 600V, 109A, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:109A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.015ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes442
      • 250:$14.6800
      • 100:$15.3900
      • 50:$16.3000
      • 25:$17.2100
      • 10:$18.0200
      • 1:$19.5400
      IPW60R017C7XKSA1
      DISTI # 726-IPW60R017C7XKSA1      		Infineon Technologies AGMOSFET
      RoHS: Compliant      		0
      • 1:$19.5400
      • 5:$19.3400
      • 10:$18.0200
      • 25:$17.2100
      • 100:$15.3900
      • 250:$14.6800
      IPW60R017C7XKSA1
      DISTI # XSKDRABS0034513      		Infineon Technologies AG 
      RoHS: Compliant      		180 in Stock0 on Order
      • 180:$18.8400
      • 30:$20.1840
      IPW60R017C7XKSA1
      DISTI # 2839474      		Infineon Technologies AGMOSFET, N-CH, 600V, 109A, TO-247
      RoHS: Compliant      		875
      • 250:$21.5900
      • 100:$21.9500
      • 50:$22.7000
      • 10:$23.5100
      • 5:$24.8500
      • 1:$25.3200
      IPW60R017C7XKSA1
      DISTI # 2839474      		Infineon Technologies AGMOSFET, N-CH, 600V, 109A, TO-247
      RoHS: Compliant      		442
      • 10:£14.1000
      • 5:£15.8500
      • 1:£16.0200
      图片 型号 描述
      IPW60R018CFD7XKSA1

      Mfr.#: IPW60R018CFD7XKSA1

      OMO.#: OMO-IPW60R018CFD7XKSA1

      		 MOSFET HIGH POWER_NEW
      IPW60R017C7XKSA1

      Mfr.#: IPW60R017C7XKSA1

      OMO.#: OMO-IPW60R017C7XKSA1

      		 MOSFET
      IPW60R017C7XKSA1

      Mfr.#: IPW60R017C7XKSA1

      OMO.#: OMO-IPW60R017C7XKSA1-INFINEON-TECHNOLOGIES

      		 HIGH POWER_NEW
      IPW60R018CFD7XKSA1

      Mfr.#: IPW60R018CFD7XKSA1

      OMO.#: OMO-IPW60R018CFD7XKSA1-INFINEON-TECHNOLOGIES

      		 HIGH POWER_NEW
      IPW60R017C7

      Mfr.#: IPW60R017C7

      OMO.#: OMO-IPW60R017C7-1190

      		 HIGH POWER_NEW_RO_TUBE (Alt: IPW60R017C7)
      IPW60R017C7 60C7017

      Mfr.#: IPW60R017C7 60C7017

      OMO.#: OMO-IPW60R017C7-60C7017-1190

      		 全新原装
      可用性
      库存:
      Available
      订购:
      5000
      输入数量:
      IPW60R017C7XKSA1的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格（美元）
      数量
      单价
      小计金额
      1
      US$18.00
      US$18.00
      10
      US$17.10
      US$171.00
      100
      US$16.20
      US$1 620.00
      500
      US$15.30
      US$7 650.00
      1000
      US$14.40
      US$14 400.00
      由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
      从...开始
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