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BSC016N06NSATMA1

BSC016N06NSATMA1
Mfr. #:
BSC016N06NSATMA1
制造商:
Infineon Technologies
描述:
MOSFET N-Ch 60V 100A DSON-8 OptiMOS
生命周期:
制造商新产品。
数据表:
BSC016N06NSATMA1 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
BSC016N06NSATMA1 更多信息
产品属性
属性值
制造商：
英飞凌
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
TDSON-8
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
60 V
Id - 连续漏极电流：
100 A
Rds On - 漏源电阻：
1.4 mOhms
Vgs th - 栅源阈值电压：
1.2 V
Vgs - 栅源电压：
20 V
Qg - 门电荷：
95 nC
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
Pd - 功耗：
139 W
配置：
单身的
频道模式：
增强
商品名：
优化MOS
打包：
卷轴
高度：
1.27 mm
长度：
5.9 mm
系列：
OptiMOS 5
晶体管类型：
1 N-Channel
宽度：
5.15 mm
品牌：
英飞凌科技
正向跨导 - 最小值：
70 S
秋季时间：
9 ns
产品类别：
MOSFET
上升时间：
9 ns
出厂包装数量：
5000
子类别：
MOSFET
典型关断延迟时间：
35 ns
典型的开启延迟时间：
19 ns
第 # 部分别名：
BSC016N06NS BSC16N6NSXT SP000924882
单位重量：
0.007055 oz
Tags
BSC016N06, BSC016, BSC01, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 60 V 1.6 mOhm 71 nC OptiMOS™ Power Mosfet - TDSON-8 FL
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:100A; On Resistance Rds(On):0.0014Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V Rohs Compliant: Yes
***ineon SCT
OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TDSON-8, RoHS
***nell
MOSFET, N CH, 60V, 100A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0014ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V; Power Dissipation Pd: 139W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package, D2PAK-3, RoHS
***ure Electronics
Single N-Channel 60 V 5.1 mOhm 88 nC HEXFET® Power Mosfet - D2PAK
***Yang
Trans MOSFET N-CH 60V 110A 3-Pin D2PAK T/R - Tape and Reel
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 110A I(D), 60V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:110A; On Resistance Rds(On):0.0042Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V Rohs Compliant: Yes
***ark
Mosfet Transistor, N Channel, 160 A, 60 V, 3.3 Mohm, 10 V, 4 V
***ure Electronics
Single N-Channel 60 V 4.2 mOhm 85 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***(Formerly Allied Electronics)
MOSFET; N Ch.; 60V; 160A; 4.2 MOHM; 85 NC QG; D2-PAK; Pb-Free
***C
Trans MOSFET N-CH 60V 160A 3-Pin(2+Tab) D2PAK T/R Trans MOSFET N-CH 60V 160A 3-Pin(2+Tab) D2PAK T/R Trans MOSFET N-CH 60V 160A 3-Pin(2+Tab) D2PAK T/R
***nell
MOSFET, N, 60V, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 160A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissip
***icontronic
Power Field-Effect Transistor, 120A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ure Electronics
N-Channel 60 V 7 mOhm Surface Mount PowerTrench Mosfet D2PAK-3
***emi
N-Channel PowerTrench® MOSFET 60V, 80A, 7mΩ
***Yang
Trans MOSFET N-CH 60V 80A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***r Electronics
Power Field-Effect Transistor, 15A I(D), 60V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ment14 APAC
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:60V; On Resistance Rds(on):6.1mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:175W; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:TO-263; Power Dissipation Pd:175W; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
*** Electronics
In a Pack of 5, N-Channel MOSFET, 100 A, 60 V, 8-Pin Power 56 ON Semiconductor FDMS030N06B
***ure Electronics
Single N-Channel 60 V 3 mOhm 75 nC 2.5 W PowerTrench SMT Mosfet - POWER 56-8
***emi
N-Channel PowerTrench® MOSFET 60V, 100A, 3mΩ
***ment14 APAC
MOSFET, N-CH, 60V, 100A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Source Voltage Vds:60V; On Resistance
***r Electronics
Power Field-Effect Transistor, 22.1A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***nell
MOSFET, N-CH, 60V, 100A, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0024ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.3V; Power Dissipation Pd: 104W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***r Electronics
Power Field-Effect Transistor, 80A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ical
Trans MOSFET N-CH 60V 80A Automotive 3-Pin(2+Tab) DPAK T/R
***ure Electronics
N-Channel 60 V 6.5 mO Surface Mount STripFET™ F6 Power Mosfet - TO-252
***icroelectronics
Automotive-grade N-channel 60 V, 4.4 mOhm typ., 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in a DPAK package
***el Electronic
NXP MCIMX535DVV1C MPU, CORTEX-A8, I.MX53, R2.1, 529BGA
***icroelectronics SCT
Automotive Power Discrete, 60V, 80A, DPAK, Tape and Reel
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
20-60V OptiMOS Power MOSFETs
Infineon's 20-60V OptiMOS Power MOSFETs are innovative products that serve the market needs throughout the whole energy supply chain. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These devices consistently set the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit characteristics which lead to reduced power losses and improved overall efficiency. These help customers that face the challenge of growing power demand, higher efficiency and lower cost.Learn More
型号 制造商 描述 库存 价格
BSC016N06NSATMA1
DISTI # BSC016N06NSATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 60V 30A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		19997In Stock
  • 1000:$1.1500
  • 500:$1.3879
  • 100:$1.7845
  • 10:$2.2210
  • 1:$2.4600
BSC016N06NSATMA1
DISTI # BSC016N06NSATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 60V 30A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		19997In Stock
  • 1000:$1.1500
  • 500:$1.3879
  • 100:$1.7845
  • 10:$2.2210
  • 1:$2.4600
BSC016N06NSATMA1
DISTI # BSC016N06NSATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 60V 30A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		10000In Stock
  • 5000:$1.0010
BSC016N06NSATMA1
DISTI # BSC016N06NSATMA1		Infineon Technologies AGTrans MOSFET N-CH 60V 30A 8-Pin TDSON EP T/R - Tape and Reel (Alt: BSC016N06NSATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.8059
  • 10000:$0.7769
  • 20000:$0.7489
  • 30000:$0.7239
  • 50000:$0.7109
BSC016N06NSATMA1
DISTI # BSC016N06NS		Infineon Technologies AGTrans MOSFET N-CH 60V 30A 8-Pin TDSON EP T/R (Alt: BSC016N06NS)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Asia - 0
    BSC016N06NSATMA1
    DISTI # 79X1327    		Infineon Technologies AGMOSFET, N-CH, 60V, 100A, PG-TDSON- 8,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0014ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes0
    • 1:$2.0600
    • 10:$1.7700
    • 25:$1.6700
    • 50:$1.5600
    • 100:$1.4600
    • 250:$1.3500
    • 500:$1.3000
    • 1000:$1.2600
    BSC016N06NSATMA1.
    DISTI # 27AC1071    		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0014ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,Power Dissipation Pd:139W,No. of Pins:8Pins RoHS Compliant: Yes0
    • 1:$0.8060
    • 10000:$0.7770
    • 20000:$0.7490
    • 30000:$0.7240
    • 50000:$0.7110
    BSC016N06NS
    DISTI # 726-BSC016N06NS    		Infineon Technologies AGMOSFET N-Ch 60V 100A DSON-8 OptiMOS
    RoHS: Compliant    		143
    • 1:$2.0600
    • 10:$1.7500
    • 100:$1.4000
    • 500:$1.2300
    • 1000:$1.0200
    BSC016N06NSATMA1
    DISTI # 726-BSC016N06NSATMA1    		Infineon Technologies AGMOSFET N-Ch 60V 100A DSON-8 OptiMOS
    RoHS: Compliant    		0
    • 1:$2.0600
    • 10:$1.7500
    • 100:$1.4000
    • 500:$1.2300
    • 1000:$1.0200
    BSC016N06NSATMA1
    DISTI # 2432702    		Infineon Technologies AGMOSFET, N CH, 60V, 100A, TDSON-8
    RoHS: Compliant    		0
    • 1:£1.8900
    • 10:£1.4900
    • 100:£1.2000
    • 250:£1.1200
    • 500:£1.1000
    BSC016N06NSATMA1
    DISTI # 2432702    		Infineon Technologies AGMOSFET, N CH, 60V, 100A, TDSON-8
    RoHS: Compliant    		0
    • 1:$3.2600
    • 10:$2.7800
    • 100:$2.3300
    BSC016N06NSATMA1
    DISTI # 2432702RL    		Infineon Technologies AGMOSFET, N CH, 60V, 100A, TDSON-8
    RoHS: Compliant    		0
    • 1:$3.2600
    • 10:$2.7800
    • 100:$2.3300
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    MAMK2520TR68M

    Mfr.#: MAMK2520TR68M

    OMO.#: OMO-MAMK2520TR68M

    		 Fixed Inductors 1008 .68uH 48mOhms +/-20%Tol 3.2A HiCur
    ADT7470ARQZ

    Mfr.#: ADT7470ARQZ

    OMO.#: OMO-ADT7470ARQZ

    		 Board Mount Temperature Sensors Hub & Fan Controller
    QPI-11LZ-01

    Mfr.#: QPI-11LZ-01

    OMO.#: OMO-QPI-11LZ-01-VICOR

    		 EMI FILTER VI CHIP 50V 7A LGA
    06032U3R3BAT2A

    Mfr.#: 06032U3R3BAT2A

    OMO.#: OMO-06032U3R3BAT2A-AVX

    		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 200volts 3.3pF ULTRA LOW ESR
    MAMK2520TR68M

    Mfr.#: MAMK2520TR68M

    OMO.#: OMO-MAMK2520TR68M-TAIYO-YUDEN

    		 Fixed Inductors INDCTR SMD HI CURR MTL CORE 0.68uH 20%
    MCS1632R015FER

    Mfr.#: MCS1632R015FER

    OMO.#: OMO-MCS1632R015FER-OHMITE

    		 Current Sense Resistors - SMD 1W 0.015 ohm 1%
    ADT7470ARQZ

    Mfr.#: ADT7470ARQZ

    OMO.#: OMO-ADT7470ARQZ-ANALOG-DEVICES

    		 Board Mount Temperature Sensors Hub & Fan Controlle
    可用性
    库存:
    17
    订购:
    2000
    输入数量:
    BSC016N06NSATMA1的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格（美元）
    数量
    单价
    小计金额
    1
    US$2.06
    US$2.06
    10
    US$1.75
    US$17.50
    100
    US$1.40
    US$140.00
    500
    US$1.22
    US$610.00
    1000
    US$1.01
    US$1 010.00
    由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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