SGS5N150UFTU

SGS5N150UFTU
Mfr. #:
SGS5N150UFTU
制造商:
ON Semiconductor / Fairchild
描述:
IGBT Transistors SGS10N60RUFD1TU
生命周期:
制造商新产品。
数据表:
SGS5N150UFTU 数据表
交货:
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ECAD Model:
产品属性
属性值
制造商:
安森美半导体
产品分类:
IGBT晶体管
RoHS:
E
技术:
包装/案例:
TO-220-3 FP
安装方式:
通孔
配置:
单身的
集电极-发射极电压 VCEO 最大值:
1500 V
集电极-发射极饱和电压:
4.7 V
最大栅极发射极电压:
20 V
25 C 时的连续集电极电流:
10 A
Pd - 功耗:
50 W
最低工作温度:
- 55 C
最高工作温度:
+ 150 C
系列:
SGS5N150UF
打包:
管子
连续集电极电流 Ic 最大值:
10 A
高度:
9.19 mm
长度:
10.16 mm
宽度:
4.7 mm
品牌:
安森美半导体/飞兆半导体
连续集电极电流:
10 A
栅极-发射极漏电流:
+/- 100 nA
产品类别:
IGBT晶体管
出厂包装数量:
1000
子类别:
IGBT
第 # 部分别名:
SGS5N150UFTU_NL
单位重量:
0.080072 oz
Tags
SGS5N, SGS5, SGS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 1.5KV 10A 3-Pin(3+Tab) TO-220F Rail
***rchild Semiconductor
Fairchild’s Insulated Gate Bipolar Transistor ( IGBT) provides low conduction and switching losses. SGS5N150UF is designed for the Switching Power Supply applications.
***ark
Transistor; Transistor Type:IGBT; DC Collector Current:10A; Collector Emitter Voltage, Vces:1500V; Power Dissipation, Pd:20W; Collector Emitter Voltage, V(br)ceo:1.5kV; Operating Temperature Range:-55°C to +150°C; No. of Pins:3 ;RoHS Compliant: Yes
型号 制造商 描述 库存 价格
SGS5N150UFTU
DISTI # SGS5N150UFTU-ND
ON SemiconductorIGBT 1500V 10A 50W TO220F
Min Qty: 1000
Container: Tube
Limited Supply - Call
    SGS5N150UFTU
    DISTI # SGS5N150UFTU
    ON SemiconductorTRANS IGBT CHIP N-CH 1.5KV 10A 3PIN TO-220F - Bulk (Alt: SGS5N150UFTU)
    Min Qty: 127
    Container: Bulk
    Americas - 0
    • 1270:$2.4321
    • 635:$2.4937
    • 256:$2.5256
    • 129:$2.5584
    • 127:$2.5752
    SGS5N150UFTU
    DISTI # 83C0945
    ON SemiconductorSINGLE IGBT, 1.5KV, 10A,DC Collector Current:10A,Collector Emitter Saturation Voltage Vce(on):1.5kV,Power Dissipation Pd:20W,Collector Emitter Voltage V(br)ceo:1.5kV,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes
    RoHS: Compliant
    0
      SGS5N150UFTUFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 10A I(C), 1500V V(BR)CES, N-Channel
      RoHS: Compliant
      163
      • 1000:$2.5900
      • 500:$2.7300
      • 100:$2.8400
      • 25:$2.9600
      • 1:$3.1900
      图片 型号 描述
      SGS5N150UFTU

      Mfr.#: SGS5N150UFTU

      OMO.#: OMO-SGS5N150UFTU

      IGBT Transistors SGS10N60RUFD1TU
      SGS5N150UF

      Mfr.#: SGS5N150UF

      OMO.#: OMO-SGS5N150UF-1190

      全新原装
      SGS5N150UFTU

      Mfr.#: SGS5N150UFTU

      OMO.#: OMO-SGS5N150UFTU-ON-SEMICONDUCTOR

      IGBT 1500V 10A 50W TO220F
      可用性
      库存:
      Available
      订购:
      5000
      输入数量:
      SGS5N150UFTU的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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