GS66502B-E01-MR

Mfr. #:: GS66502B-E01-MR
制造商:: GaN Systems
描述:: MOSFET 650V Enhancement Mode Transisto
生命周期:: 制造商新产品。
数据表:: GS66502B-E01-MR 数据表
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更多信息:: GS66502B-E01-MR 更多信息

产品属性
属性值

制造商: 氮化镓系统

产品分类: 晶体管 - FET、MOSFET - 单

打包: 卷轴

安装方式: 贴片/贴片

技术: 氮化镓

通道数: 1 Channel

配置: 单身的

最高工作温度: + 150 C

最低工作温度: - 55 C

VGS-栅极-源极-电压: 10 V

Id 连续漏极电流: 7.5 A

Vds-漏-源-击穿电压: 650 V

VGS-th-Gate-Source-Threshold-Voltage: 1.6 V

Rds-On-Drain-Source-Resistance: 560 mOhms

晶体管极性: N通道

Qg-门电荷: 1.7 nC

通道模式: 增强

Tags: GS6650, GS665, GS66, GS6

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

GS66502B-E01-MR 更多信息

GS66502B 650V GaN Transistor: GaN Systems GS66502B 650V GaN Transistor is an enhancement mode GaN-on-silicon power transistor. This transistor is based on Island Technology® cell layout for high-current die performance and yield. The GS66502B transistor features 650V enhancement mode power switch, easy gate drive requirements, and low inductance GaNPX™ package. This GaN transistor is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. The GS66502B is compliant with RoHS 6 and also features reverse current capability and zero reverse recovery loss. Typical applications include high efficiency / density power conversion, AC-DC converters, half bridge topologies, fast battery charging, and small-medium UPS.

GS6650x 650V GaN Transistors: GaN Systems GS6650x 650V GaN Transistors are Enhancement Mode GaN-on-Silicon power devices. The properties of GaN allow for high current, high voltage breakdown, and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance and yield. GaNPX™ packaging enables low inductance and low thermal resistance in a small package. GS6650x Gan Transistors are bottom-side cooled, offering very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.

Market price

型号	制造商	描述	库存	价格
GS66502B-E01-MR DISTI # 499-GS66502B-E01-MR	GaN Systems	MOSFET 650V Enhancement Mode Transistor RoHS: Compliant	1533	1:$9.3500 10:$9.0500 25:$8.6300 250:$8.0000 1000:$7.7800
GS66502B-E01-MR DISTI # GS66502B-E01-MR	GaN Systems	GAN POWER TRANSISTOR RoHS: Compliant	750	250:$7.6900

GS66502B-E01-MR

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes