SI2301CDS-T1-E3

Mfr. #:: SI2301CDS-T1-E3
制造商:: Vishay
描述:: MOSFET P-CH 20V 3.1A SOT23-3
生命周期:: 制造商新产品。
数据表:: SI2301CDS-T1-E3 数据表
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更多信息:: SI2301CDS-T1-E3 更多信息

产品属性
属性值

制造商: 威世硅

产品分类: FET - 单

系列: 沟槽FETR

打包: Digi-ReelR 替代包装

部分别名: SI2301CDS-E3

单位重量: 0.050717 oz

安装方式: 贴片/贴片

包装盒: TO-236-3, SC-59, SOT-23-3

技术: 硅

工作温度: -55°C ~ 150°C (TJ)

安装型: 表面贴装

通道数: 1 Channel

供应商-设备-包: SOT-23-3 (TO-236)

配置: 单身的

FET型: MOSFET P 沟道，金属氧化物

最大功率: 1.6W

晶体管型: 1 P-Channel

漏源电压 Vdss: 20V

输入电容-Ciss-Vds: 405pF @ 10V

FET-Feature: 标准

Current-Continuous-Drain-Id-25°C: 3.1A (Tc)

Rds-On-Max-Id-Vgs: 112 mOhm @ 2.8A, 4.5V

Vgs-th-Max-Id: 1V @ 250μA

栅极电荷-Qg-Vgs: 10nC @ 4.5V

钯功耗: 860 mW

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 35 ns

上升时间: 35 ns

VGS-栅极-源极-电压: 8 V

Id 连续漏极电流: - 2.3 A

Vds-漏-源-击穿电压: - 20 V

Rds-On-Drain-Source-Resistance: 112 mOhms

晶体管极性: P-通道

典型关断延迟时间: 30 ns

典型开启延迟时间: 11 ns

通道模式: 增强

Tags: SI2301CDS-T1, SI2301CDS-T, SI2301C, SI2301, SI230, SI23, SI2

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI2301CDS-T1-E3 描述

***ical: Trans MOSFET P-CH 20V 3.1A 3-Pin SOT-23 T/R

***Components: P-Ch MOSFET SOT-23 20V 112mohm @ 4.5V -

***ment14 APAC: MOSFET, P CH, -20V, -3.1A, SOT-23-3

***i-Key: MOSFET P-CH 20V 3.1A SOT23-3

***ure Electronics: P-CHANNEL 20-V (D-S) MOSFET

***ponent Sense: ''Si2301BDS MOS-FET Enh P 18 V 1.8 A

***ied Electronics & Automation: 20V 3.1A 1.6W 112mohm @ 4.5V

***: P-CHANNEL 20-V

***ark: Transistor Polarity:p Channel; Continuous Drain Current Id:-3.1A; Drain Source Voltage Vds:-20V; On Resistance Rds(On):0.11Ohm; Rds(On) Test Voltage Vgs:-2.5V; Threshold Voltage Vgs:-400Mv; Power Dissipation Pd:1.6W; Product Range:- Rohs Compliant: No

***nell: MOSFET, P CH, -20V, -3.1A, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.1A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.11ohm; Rds(on) Test Voltage Vgs:-2.5V; Power Dissipation Pd:1.6W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-23; No. of Pins:3; MSL:-

SI2301CDS-T1-E3 更多信息

SI2 Series TrenchFET® Power MOSFETs: Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.

Market price

型号	制造商	描述	库存	价格
SI2301CDS-T1-E3 DISTI # V72:2272_07431534	Vishay Intertechnologies	Trans MOSFET P-CH 20V 2.3A 3-Pin SOT-23 T/R RoHS: Compliant	2676	1000:$0.1277 500:$0.1442 250:$0.2169 100:$0.2182 25:$0.3061 10:$0.3069 1:$0.3886
SI2301CDS-T1-E3 DISTI # SI2301CDS-T1-E3CT-ND	Vishay Siliconix	MOSFET P-CH 20V 3.1A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	69909In Stock	1000:$0.1184 500:$0.1525 100:$0.2545 10:$0.3850 1:$0.5500
SI2301CDS-T1-E3 DISTI # SI2301CDS-T1-E3DKR-ND	Vishay Siliconix	MOSFET P-CH 20V 3.1A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	69909In Stock	1000:$0.1184 500:$0.1525 100:$0.2545 10:$0.3850 1:$0.5500
SI2301CDS-T1-E3 DISTI # SI2301CDS-T1-E3TR-ND	Vishay Siliconix	MOSFET P-CH 20V 3.1A SOT23-3 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	69000In Stock	3000:$0.1040
SI2301CDS-T1-E3 DISTI # 31647599	Vishay Intertechnologies	Trans MOSFET P-CH 20V 2.3A 3-Pin SOT-23 T/R RoHS: Compliant	2676	1000:$0.1277 500:$0.1442 250:$0.2169 100:$0.2182 46:$0.3061
SI2301CDS-T1-E3 DISTI # 30617107	Vishay Intertechnologies	Trans MOSFET P-CH 20V 2.3A 3-Pin SOT-23 T/R RoHS: Compliant	750	500:$0.1887 100:$0.2104 50:$0.2384 16:$0.3379
SI2301CDS-T1-E3 DISTI # SI2301CDS-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 2.3A 3-Pin SOT-23 T/R - Cut TR (SOS) (Alt: SI2301CDS-T1-E3) RoHS: Not Compliant Min Qty: 1 Container: Cut Tape	Americas - 1895	1:$0.0609 30:$0.0609 75:$0.0599 150:$0.0599 375:$0.0599 750:$0.0599 1500:$0.0599
SI2301CDS-T1-E3 DISTI # SI2301CDS-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 2.3A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2301CDS-T1-E3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.0546 6000:$0.0530 12000:$0.0508 18000:$0.0494 30000:$0.0481
SI2301CDS-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 2.3A 3-Pin SOT-23 T/R - Tape and Reel RoHS: Compliant Container: Reel	Americas - 0
SI2301CDS-T1-E3 DISTI # 97W2628	Vishay Intertechnologies	MOSFET Transistor, P Channel, -3.1 A, -20 V, 0.11 ohm, -2.5 V, -400 mV RoHS Compliant: Yes	2566	1000:$0.1670 500:$0.1870 100:$0.2330 50:$0.2700 25:$0.3080 10:$0.3450 1:$0.5100
SI2301CDS-T1-E3. DISTI # 30AC0135	Vishay Intertechnologies	Transistor Polarity:P Channel,Continuous Drain Current Id:-3.1A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.11ohm,Rds(on) Test Voltage Vgs:-2.5V,Threshold Voltage Vgs:-400mV,Power Dissipation Pd:1.6W,Product Range:- RoHS Compliant: No	0	1:$0.0550 6000:$0.0550 12000:$0.0550 18000:$0.0550 30000:$0.0550
SI2301CDS-T1-E3 DISTI # 70459660	Vishay Siliconix	20V 3.1A 1.6W 112mohm @ 4.5V RoHS: Compliant	0	3000:$0.2590 6000:$0.2410 12000:$0.2060
SI2301CDS-T1-E3 DISTI # 781-SI2301CDS-E3	Vishay Intertechnologies	MOSFET -20V Vds 8V Vgs SOT-23 RoHS: Compliant	20181	1:$0.5100 10:$0.3450 100:$0.2330 500:$0.1870 1000:$0.1410 3000:$0.1290 6000:$0.1210 9000:$0.1130 24000:$0.1040
SI2301CDS-T1-E3	Vishay Intertechnologies	RoHS: Compliant	1900Cut Tape/Mini-Reel	1:$0.1640 100:$0.1180 250:$0.1110 500:$0.1050 1500:$0.0928
SI2301CDS-T1-E3	Vishay Intertechnologies	P-Channel 20 V112 mO 5.5 nC SMT TrenchFET Power Mosfet - SOT-23 RoHS: Compliant	36000Reel	3000:$0.0835 6000:$0.0790 12000:$0.0772
SI2301CDS-T1-E3	Vishay Intertechnologies		248
SI2301CDS-T1-E3 DISTI # 2335284	Vishay Intertechnologies	MOSFET, P CH, -20V, -3.1A, SOT-23 RoHS: Compliant	2566	1000:$0.2520 500:$0.2970 100:$0.3690 10:$0.5460 1:$0.8080
SI2301CDS-T1-E3 DISTI # 2335284	Vishay Intertechnologies	MOSFET, P CH, -20V, -3.1A, SOT-23 RoHS: Compliant	3392	500:£0.1580 250:£0.1690 100:£0.1800 25:£0.2890 5:£0.3030
SI2301CDS-T1-E3 DISTI # XSFP00000007280	Vishay Siliconix	RectifierDiode,1Element,0.7A,600VV(RRM),Silicon,DO-219AB RoHS: Compliant	120000	120000:$0.1742 3000:$0.1916
SI2301CDS-T1-E3	Vishay Intertechnologies	MOSFET -20V Vds 8V Vgs SOT-23 RoHS: Compliant	Americas -

图片	型号	描述
	Mfr.#: SI2301CDS-T1-GE3 OMO.#: OMO-SI2301CDS-T1-GE3	MOSFET -20V Vds 8V Vgs SOT-23
	Mfr.#: SI2301CDS-T1-GE3. OMO.#: OMO-SI2301CDS-T1-GE3-	MOSFET 20V 3.1A 1.6W 112 mohms @ 4.5V
	Mfr.#: SI2301CDS OMO.#: OMO-SI2301CDS-1190	全新原装
	Mfr.#: SI2301CDS-T1-G OMO.#: OMO-SI2301CDS-T1-G-1190	全新原装
	Mfr.#: SI2301CDS-T1-GE3 (VISHAY) OMO.#: OMO-SI2301CDS-T1-GE3-VISHAY--1190	全新原装
	Mfr.#: SI2301CDS-T1-GE3 , MAX63 OMO.#: OMO-SI2301CDS-T1-GE3-MAX63-1190	全新原装
	Mfr.#: SI2301CDS-TI-GE3 OMO.#: OMO-SI2301CDS-TI-GE3-1190	全新原装
	Mfr.#: SI2301CDS-T1-E3-CUT TAPE OMO.#: OMO-SI2301CDS-T1-E3-CUT-TAPE-1190	全新原装
	Mfr.#: SI2301CDS-T1-GE3-CUT TAPE OMO.#: OMO-SI2301CDS-T1-GE3-CUT-TAPE-1190	全新原装
	Mfr.#: SI2301CDS-T1-E3 OMO.#: OMO-SI2301CDS-T1-E3-VISHAY	MOSFET P-CH 20V 3.1A SOT23-3

SI2301CDS-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes