OMO ElectronicOMO Electronic
Expand menu
0 购物车

IPB60R950C6ATMA1

IPB60R950C6ATMA1
Mfr. #:
IPB60R950C6ATMA1
制造商:
Infineon Technologies
描述:
MOSFET LOW POWER_LEGACY
生命周期:
制造商新产品。
数据表:
IPB60R950C6ATMA1 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商：
英飞凌
产品分类：
MOSFET
技术：
硅
安装方式：
贴片/贴片
包装/案例：
TO-263-3
通道数：
1 Channel
晶体管极性：
N通道
配置：
单身的
商品名：
酷摩
打包：
卷轴
高度：
4.4 mm
长度：
10 mm
晶体管类型：
1 N-Channel
宽度：
9.25 mm
品牌：
英飞凌科技
产品类别：
MOSFET
子类别：
MOSFET
第 # 部分别名：
IPB60R950C6ATMA1 SP000660620
单位重量：
0.139332 oz
Tags
IPB60R, IPB60, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
TransMOSFETNCH600V44A4Pin3TabTO263
***ineonSCT
CoolMOSC6combinesInfineonsexperienceastheleadingsuperjunctionMOSFETsupplierwithbestinclassinnovationPGTO2633RoHS
***ment14APAC
MOSFETNCH600V44ATO263;TransistorPolarityNChannel;ContinuousDrainCurrentId44A;DrainSourceVoltageVds600V;OnResistanceRdson086ohm;RdsonTestVoltageVgs10V;ThresholdVoltageVgsTyp3V;PowerDissipationPd37W;OperatingTemperatureRange55Cto150C;TransistorCaseStyleTO263;NoofPins2;SVHCNoSVHC20Jun2011;CurrentIdMax44A;PowerDissipationPd37W;VoltageVgsMax30V
***ineon
CoolMOSC6combinesInfineonsexperienceastheleadingsuperjunctionMOSFETsupplierwithbestinclassinnovationTheC6devicesprovideallbenefitsofafastswitchingSJMOSFETwhilenotsacrificingeaseofuseExtremelylowswitchingandconductionlossesmakeswitchingapplicationsevenmoreefficientcompactlighterandcoolerSummaryofFeaturesEasycontrolofswitchingbehavior;ExtremelylowlossesduetoverylowFigureofMeritRDSonQgandEoss;Veryhighcommutationruggedness;Easytouse;BetterlightloadefficiencycomparedtoC3;OutstandingreliabilitywithprovenCoolMOSqualitycombinedwithhighbodydioderuggedness;BetterpriceperformanceincomparisontopreviousCoolMOSgenerations;MoreefficientmorecompactlighterandcoolerBenefitsImprovedpowerdensity;Improvedreliability;Generalpurposepartcanbeusedinbothsoftandhardswitchingtopologies;Betterlightloadeffciency;Improvedeffciencyinhardswitchingapplications;Improvedeaseofuse;ReducespossibleringingduetopcblayoutandpackageparasiticeffectsTargetApplicationsConsumer;Adapter;eMobility;PFCstagesforserver&telecom;SMPS;PCpower;Solar;Lighting
型号 制造商 描述 库存 价格
IPB60R950C6ATMA1
DISTI # IPB60R950C6ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 600V 4.4A TO263
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IPB60R950C6ATMA1
    DISTI # IPB60R950C6ATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 600V 4.4A TO263
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IPB60R950C6ATMA1
      DISTI # IPB60R950C6ATMA1DKR-ND      		Infineon Technologies AGMOSFET N-CH 600V 4.4A TO263
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        IPB60R950C6ATMA1
        DISTI # IPB60R950C6ATMA1        		Infineon Technologies AGTrans MOSFET N-CH 600V 4.4A 4-Pin(3+Tab) TO-263 - Bulk (Alt: IPB60R950C6ATMA1)
        Min Qty: 625
        Container: Bulk        		Americas - 0
        • 6250:$0.5079
        • 3125:$0.5169
        • 1875:$0.5349
        • 1250:$0.5549
        • 625:$0.5759
        IPB60R950C6ATMA1
        DISTI # 30T1834        		Infineon Technologies AGMOSFET, N CH, 650V, 4.4A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:4.4A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.86ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Product Range:- RoHS Compliant: Yes0
          IPB60R950C6ATMA1
          DISTI # N/A          		Infineon Technologies AGMOSFET LOW POWER_LEGACY0
            IPB60R950C6
            DISTI # 726-IPB60R950C6            		Infineon Technologies AGMOSFET N-Ch 650V 4.4A D2PAK-2 CoolMOS C6
            RoHS: Compliant            		0
            • 1:$1.2600
            • 10:$1.0800
            • 100:$0.8250
            • 500:$0.7290
            • 1000:$0.5750
            IPB60R950C6ATMA1Infineon Technologies AGPower Field-Effect Transistor, 4.4A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
            RoHS: Compliant            		4
            • 1000:$0.5300
            • 500:$0.5500
            • 100:$0.5800
            • 25:$0.6000
            • 1:$0.6500
            IPB60R950C6ATMA1
            DISTI # 8269500P            		Infineon Technologies AGMOSFET N-CH 4.4A 600V COOLMOS C6 TO263-4, RL5000
            • 500:£0.6780
            • 200:£0.6980
            IPB60R950C6ATMA1
            DISTI # 1860809            		Infineon Technologies AGMOSFET,N CH,600V,4.4A,TO263
            RoHS: Compliant            		0
            • 1000:$0.8670
            • 500:$1.1000
            • 100:$1.2400
            • 10:$1.6300
            • 1:$1.9000
            图片 型号 描述
            IPB60R950C6ATMA1

            Mfr.#: IPB60R950C6ATMA1

            OMO.#: OMO-IPB60R950C6ATMA1

            		 MOSFET LOW POWER_LEGACY
            IPB60R950C6ATMA1

            Mfr.#: IPB60R950C6ATMA1

            OMO.#: OMO-IPB60R950C6ATMA1-INFINEON-TECHNOLOGIES

            		 MOSFET N-CH 600V 4.4A TO263
            IPB60R950C6

            Mfr.#: IPB60R950C6

            OMO.#: OMO-IPB60R950C6-1190

            		 MOSFET N-Ch 650V 4.4A D2PAK-2 CoolMOS C6
            可用性
            库存:
            Available
            订购:
            3500
            输入数量:
            IPB60R950C6ATMA1的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
            从...开始
            Top