SPW11N60CFD

Mfr. #:: SPW11N60CFD
制造商:: Rochester Electronics, LLC
描述:: IGBT Transistors MOSFET N-Ch 650V 11A TO247-3 CoolMOS CFD
生命周期:: 制造商新产品。
数据表:: SPW11N60CFD 数据表
交货:: DHL FedEx Ups TNT EMS
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ECAD Model:

产品属性
属性值

制造商: 英飞凌

产品分类: FET - 单

系列: CoolMOS CFD

打包: 管子

部分别名: SP000014534 SPW11N60CFDFKSA1 SPW11N60CFDXK

单位重量: 1.340411 oz

安装方式: 通孔

商品名: 酷摩

包装盒: TO-247-3

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 N-Channel

钯功耗: 125 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 7 ns

上升时间: 18 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 11 A

Vds-漏-源-击穿电压: 650 V

Rds-On-Drain-Source-Resistance: 440 mOhms

晶体管极性: N通道

典型关断延迟时间: 43 ns

典型开启延迟时间: 34 ns

通道模式: 增强

Tags: SPW11N60CF, SPW11N60C, SPW11N60, SPW11N6, SPW11N, SPW11, SPW1, SPW

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SPW11N60CFD 描述

***et: Transistor MOSFET N-CH 600V 11A 3-Pin TO-247 T/R

***ineon SCT: CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies, PG-TO247-3, RoHS

***ark: MOSFET, N, COOLMOS, TO-247; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:650V; Current, Id Cont:11A; Resistance, Rds On:0.44ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-247; ;RoHS Compliant: Yes

***ineon: CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS CFD series combines the experience of the leading SJ MOSFET supplier with high class innovation. | Summary of Features: Fourth series of CoolMOS market entry in 2004; Fast Body Diode, Q rr 1/10th of C3 series, V th 4 V, g fs high, R g low; Specific for phase-shift ZVS and DC-AC power applications | Benefits: Improved efficiency; More efficient, more compact, lighter and cooler; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness | Target Applications: Solar; Adapter; PC power; Consumer; Server; Telecom

***nell: MOSFET, N, COOLMOS, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.44ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:125W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Cont Current Id @ 25°C:11A; Current Id Max:11A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:125W; Pulse Current Idm:28A; Termination Type:Through Hole; Voltage Vds:650V; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V

Market price

型号	制造商	描述	库存	价格
SPW11N60CFD DISTI # C1S322000037632	Infineon Technologies AG	Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	1	1:$2.5800
SPW11N60CFDFKSA1 DISTI # SPW11N60CFDFKSA1-ND	Infineon Technologies AG	MOSFET N-CH 650V 11A TO-247 RoHS: Compliant Min Qty: 240 Container: Tube	Limited Supply - Call
SPW11N60CFD DISTI # 726-SPW11N60CFD	Infineon Technologies AG	MOSFET N-Ch 650V 11A TO247-3 CoolMOS CFD RoHS: Compliant	0
SPW11N60CFDFKSA1 DISTI # N/A	Infineon Technologies AG	MOSFET LOW POWER_LEGACY	0
SPW11N60CFD	Infineon Technologies AG	Power Field-Effect Transistor, 11A I(D), 600V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 RoHS: Compliant	4796	1000:$1.9300 500:$2.0300 100:$2.1100 25:$2.2000 1:$2.3700
SPW11N60CFD DISTI # 1095703	Infineon Technologies AG	RoHS: Compliant	0	1:$5.5100 10:$4.6900 100:$4.0600

图片	型号	描述
	Mfr.#: SPW11N80C3 OMO.#: OMO-SPW11N80C3	MOSFET N-Ch 800V 11A TO247-3 CoolMOS C3
	Mfr.#: SPW11N60C3 OMO.#: OMO-SPW11N60C3-124	Darlington Transistors MOSFET N-Ch 600V 11A TO247-3 CoolMOS C3
	Mfr.#: SPW112A OMO.#: OMO-SPW112A-1190	全新原装
	Mfr.#: SPW11B80C3 OMO.#: OMO-SPW11B80C3-1190	全新原装
	Mfr.#: SPW11N60CFD,11N60CFD OMO.#: OMO-SPW11N60CFD-11N60CFD-1190	全新原装
	Mfr.#: SPW11N60S5FKSA1 OMO.#: OMO-SPW11N60S5FKSA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 600V 11A TO-247
	Mfr.#: SPW11N65C3 OMO.#: OMO-SPW11N65C3-1190	全新原装
	Mfr.#: SPW11N80C3 NOPB OMO.#: OMO-SPW11N80C3-NOPB-1190	全新原装
	Mfr.#: SPW11N80C3E8160 OMO.#: OMO-SPW11N80C3E8160-1190	全新原装
	Mfr.#: SPW11N80C3FKSA1 OMO.#: OMO-SPW11N80C3FKSA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 800V 11A TO-247

SPW11N60CFD

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes