BSC118N10NSGATMA1

Mfr. #:: BSC118N10NSGATMA1
制造商:: Infineon Technologies
描述:: MOSFET MV POWER MOS
生命周期:: 制造商新产品。
数据表:: BSC118N10NSGATMA1 数据表
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HTML Datasheet:: BSC118N10NSGATMA1 Datasheet BSC118N10NSGATMA1 Datasheet (P4-P6)BSC118N10NSGATMA1 Datasheet (P7-P9)BSC118N10NSGATMA1 Datasheet (P10)
ECAD Model:

产品属性
属性值

制造商：: 英飞凌

产品分类：: MOSFET

技术：: 硅

安装方式：: 贴片/贴片

包装/案例：: TDSON-8

商品名：: 优化MOS

打包：: 卷轴

高度：: 1.27 mm

长度：: 5.9 mm

宽度：: 5.15 mm

品牌：: 英飞凌科技

产品类别：: MOSFET

子类别：: MOSFET

第 # 部分别名：: BSC118N10NS BSC118N1NSGXT G SP000379599

Tags: BSC118N10NSG, BSC118, BSC11, BSC1, BSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSC118N10NSGATMA1 描述

***ure Electronics: Single N-Channel 100 V 11.8 mOhm 42 nC OptiMOS Power Mosfet - TDSON-8

***ineon SCT: Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHS

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:71A; On Resistance Rds(On):0.0118Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V Rohs Compliant: Yes

***nell: MOSFET, N CH, 71A, 100V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:71A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.01ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:114W; Transistor Case Style:PG-TDSON; No. of Pins:8Pins; Operating Temperature Max:150°C; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:71A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon: The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)

Market price

型号	制造商	描述	库存	价格
BSC118N10NSGATMA1 DISTI # V72:2272_06383308	Infineon Technologies AG	Trans MOSFET N-CH 100V 11A Automotive 8-Pin TDSON EP T/R RoHS: Compliant	4746	3000:$0.7344 1000:$0.7423 500:$0.9037 250:$1.1089 100:$1.1203 25:$1.4034 10:$1.4175 1:$1.7477
BSC118N10NSGATMA1 DISTI # V36:1790_06383308	Infineon Technologies AG	Trans MOSFET N-CH 100V 11A Automotive 8-Pin TDSON EP T/R RoHS: Compliant	0	5000000:$0.5591 2500000:$0.5595 500000:$0.5998 50000:$0.6766 5000:$0.6897
BSC118N10NSGATMA1 DISTI # BSC118N10NSGATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 100V 71A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3999In Stock	1000:$0.7924 500:$0.9563 100:$1.1640 10:$1.4480 1:$1.6100
BSC118N10NSGATMA1 DISTI # BSC118N10NSGATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 100V 71A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3999In Stock	1000:$0.7924 500:$0.9563 100:$1.1640 10:$1.4480 1:$1.6100
BSC118N10NSGATMA1 DISTI # BSC118N10NSGATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 100V 71A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	Temporarily Out of Stock	10000:$0.6721 5000:$0.6897
BSC118N10NSGATMA1 DISTI # 31038050	Infineon Technologies AG	Trans MOSFET N-CH 100V 11A Automotive 8-Pin TDSON EP T/R RoHS: Compliant	5000	50000:$0.7246 30000:$0.7266 20000:$0.7285 10000:$0.7305 5000:$0.7325
BSC118N10NSGATMA1 DISTI # 26195152	Infineon Technologies AG	Trans MOSFET N-CH 100V 11A Automotive 8-Pin TDSON EP T/R RoHS: Compliant	4746	3000:$0.7344 1000:$0.7423 500:$0.9037 250:$1.1089 100:$1.1203 25:$1.4034 13:$1.4175
BSC118N10NSGATMA1 DISTI # BSC118N10NSGATMA1	Infineon Technologies AG	Trans MOSFET N-CH 100V 11A 8-Pin TDSON T/R - Bulk (Alt: BSC118N10NSGATMA1) RoHS: Compliant Min Qty: 569 Container: Bulk	Americas - 0	5690:$0.5589 2845:$0.5689 1707:$0.5889 1138:$0.6109 569:$0.6339
BSC118N10NSGATMA1 DISTI # BSC118N10NSGATMA1	Infineon Technologies AG	Trans MOSFET N-CH 100V 11A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC118N10NSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	50000:$0.4869 30000:$0.4959 20000:$0.5139 10000:$0.5329 5000:$0.5529
BSC118N10NSGATMA1 DISTI # SP000379599	Infineon Technologies AG	Trans MOSFET N-CH 100V 11A 8-Pin TDSON T/R (Alt: SP000379599) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Europe - 0	50000:€0.5689 30000:€0.6129 20000:€0.6639 10000:€0.7249 5000:€0.8859
BSC118N10NSGATMA1. DISTI # 31AC8221	Infineon Technologies AG	Transistor Polarity:N Channel,Continuous Drain Current Id:71A,Drain Source Voltage Vds:100V,On Resistance Rds(on):11.8mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:114W,No. of Pins:8Pins RoHS Compliant: Yes	0	10000:$0.5610 20000:$0.5610 30000:$0.5610 50000:$0.5610 1:$0.5820
BSC118N10NS G DISTI # 726-BSC118N10NSG	Infineon Technologies AG	MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2 RoHS: Compliant	4970	1:$1.5700 10:$1.3400 100:$1.0300 500:$0.9120 1000:$0.7190 5000:$0.6860
BSC118N10NSGATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 11A I(D), 100V, 0.0118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	5000	1000:$0.5800 500:$0.6100 100:$0.6300 25:$0.6600 1:$0.7100

图片	型号	描述
	Mfr.#: BSC118N10NS G OMO.#: OMO-BSC118N10NS-G	MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2
	Mfr.#: BSC118N10NSGATMA1 OMO.#: OMO-BSC118N10NSGATMA1	MOSFET MV POWER MOS
	Mfr.#: BSC118N10NS OMO.#: OMO-BSC118N10NS-1190	全新原装
	Mfr.#: BSC118N10NS3G OMO.#: OMO-BSC118N10NS3G-1190	全新原装
	Mfr.#: BSC118N10NSGATMA1 , TDZ1 OMO.#: OMO-BSC118N10NSGATMA1-TDZ1-1190	全新原装
	Mfr.#: BSC118N10NSG OMO.#: OMO-BSC118N10NSG-1190	Power Field-Effect Transistor, 11A I(D), 100V, 0.0118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
	Mfr.#: BSC118N10NSGATMA1 OMO.#: OMO-BSC118N10NSGATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 100V 71A TDSON-8
	Mfr.#: BSC118N10NS G OMO.#: OMO-BSC118N10NS-G-124	Darlington Transistors MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2

BSC118N10NSGATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes