IXYH30N120C3D1

IXYH30N120C3D1
Mfr. #:
IXYH30N120C3D1
制造商:
Littelfuse
描述:
IGBT Transistors XPT 1200V IGBT GenX4 XPT IGBT
生命周期:
制造商新产品。
数据表:
IXYH30N120C3D1 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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HTML Datasheet:
IXYH30N120C3D1 DatasheetIXYH30N120C3D1 Datasheet (P4-P6)IXYH30N120C3D1 Datasheet (P7)
ECAD Model:
更多信息:
IXYH30N120C3D1 更多信息
产品属性
属性值
制造商:
IXYS
产品分类:
IGBT晶体管
RoHS:
Y
技术:
包装/案例:
TO-247AD-3
安装方式:
通孔
配置:
单身的
集电极-发射极电压 VCEO 最大值:
1200 V
集电极-发射极饱和电压:
3.7 V
最大栅极发射极电压:
30 V
25 C 时的连续集电极电流:
66 A
Pd - 功耗:
416 W
最低工作温度:
- 55 C
最高工作温度:
+ 150 C
系列:
IXYH30N120
打包:
管子
连续集电极电流 Ic 最大值:
66 A
品牌:
IXYS
栅极-发射极漏电流:
100 nA
产品类别:
IGBT晶体管
出厂包装数量:
30
子类别:
IGBT
商品名:
XPT
单位重量:
1.340411 oz
Tags
IXYH30N120C, IXYH30N12, IXYH30N1, IXYH3, IXYH, IXY
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
GenX3™ XPT™ IGBT 1200 V 66 A Flange Mount High-Speed IGBT - TO-247AD
*** Stop Electro
Insulated Gate Bipolar Transistor, 66A I(C), 1200V V(BR)CES, N-Channel, TO-247AD
***el Electronic
IGBT Transistors XPT 1200V IGBT GenX4 XPT IGBT
***DA Technology Co., Ltd.
Product Description Demo for Development.
***ure Electronics
GenX3™ XPT™ IGBT 1200 V 64 A Flange Mount High-Speed IGBT - TO-247AD
***el Electronic
IGBT Transistors XPT 1200V IGBT GenX5 XPT IGBT
***i-Key
IGBT 1200V 64A 480W TO247
***trelec
IGBT, 1.2kV, 80A, TO-247AD
***S
new, original packaged
***el Nordic
Contact for details
***ark
1200V Trench IGBT for Generic Industrial Applications, Size 4.2 w/ Diode (Extended Lead), TUBE
***ical
Trans IGBT Chip N-CH 1200V 85A 320000mW 3-Pin(3+Tab) TO-247AD Tube
***-Wing Technology
Tube Through Hole Trench ROHS3Compliant IGBT Transistor 2V @ 15V 30A 85A 320W 153ns
***ineon SCT
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247 package, TO247COPAK-3, RoHS
***ure Electronics
IRG7PH42UD-EP Series 1200 V 85 A Insulated Gate Bipolar Transistor - TO-247AD
***el Electronic
Alarms, Buzzers, and Sirens Transducer, Externally Driven Through Hole 1 (Unlimited) Piezo PC Pins Zero-Peak Signal 0.496Dia 12.60mm 4kHz 0.291 7.40mm AUDIO PIEZO TRANSDUCER 30V TH
***ineon SCT
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247 package, TO247COPAK-3, RoHS
***ure Electronics
IRG7PH42UDPBF Series 1200 V 85 A Insulated Gate Bipolar Transistor - TO-247AC
***(Formerly Allied Electronics)
1200V Trench IGBT For Generic Industrial Applications, Size 4.2 w/Diode
***ment14 APAC
IGBT,N CH,DIODE,1200V,85A,TO-247AC; Transistor Type:IGBT; DC Collector Current:85A; Collector Emitter Voltage Vces:1.7V; Power Dissipation Pd:320W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:320W
***i-Key
IGBT 1200V 75A 380W TO247
***ark
Igbt, Single, 1.2Kv, 75A, To-247; Dc Collector Current:75A; Collector Emitter Saturation Voltage Vce(On):2.9V; Power Dissipation Pd:380W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***DA Technology Co., Ltd.
Product Description Demo for Development.
***ark
Transistor, Igbt, 1.2Kv, 75A, To-247 Rohs Compliant: Yes
***i-Key
IGBT 1200V 75A 380W TO247
***DA Technology Co., Ltd.
Product Description Demo for Development.
***S
new, original packaged
***el Nordic
Contact for details
***p One Stop Global
Trans IGBT Chip N-CH 1200V 60A 300000mW 3-Pin(3+Tab) TO-247AD Tube
***ure Electronics
IRGP30B120KD-EP Series 1200 V 30 A N-Channel Motor Control Co-Pack IGBT TO-247AD
***nell
IGBT, W/DIODE, 1200V, 60A, TO247AD; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.2kV; Power Dissipation Pd: 300W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247AD; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: IRGP Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Ic Continuous a Max: 60A; Fall Time Max: 75ns; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Max: 300W; Pulsed Current Icm: 120A; Rise Time: 25ns; Termination Type: Through Hole; Transistor Polarity: N Channel; Transistor Type: IGBT; Voltage Vces: 1.2kV
1200V XPT™ High Speed IGBTs
IXYS 1200V XPT™ High Speed IGBTs are high speed, high-gain 1200V Insulated Gate Bipolar Transistor products. The 1200V XPT™ High Speed IGBTs feature high current ratings (105A - 160A, Tc = 25 degrees Centigrade) and are specifically optimized for reduced switching losses in high voltage applications that require hard-switching frequencies of up to 50 kHz. IXYS's 1200V XPT™ High Speed IGBTs have high-speed switching capabilities that allow customers to boost the power conversion efficiency of their designs and to use smaller, lighter and more cost-effective passive components. The resultant effect is a reduction in total system cost of ownership for these 1200V XPT™ High Speed IGBTs and a reduced PCB layout area.Learn More
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
型号 制造商 描述 库存 价格
IXYH30N120C3D1
DISTI # IXYH30N120C3D1-ND
IXYS CorporationIGBT 1200V 66A 416W TO247
RoHS: Compliant
Min Qty: 30
Container: Tube
Temporarily Out of Stock
  • 30:$9.5357
IXYH30N120C3D1
DISTI # 747-IXYH30N120C3D1
IXYS CorporationIGBT Transistors XPT 1200V IGBT GenX4 XPT IGBT
RoHS: Compliant
53
  • 1:$11.6300
  • 10:$10.4700
  • 25:$9.5400
  • 50:$8.7100
  • 100:$8.6100
  • 250:$7.8400
  • 500:$7.2100
  • 1000:$6.2800
IXYH30N120C3D1
DISTI # 8080271P
IXYS CorporationIGBT 1200V 30A XPT GENX3 W/DIODE TO247AD, TU9
  • 10:£7.1500
  • 20:£6.9800
  • 50:£6.8100
  • 250:£5.6600
图片 型号 描述
MGJ2D051509SC

Mfr.#: MGJ2D051509SC

OMO.#: OMO-MGJ2D051509SC-MURATA-POWER-SOLUTIONS

Isolated DC/DC Converters 2W 5Vin 15/-8.7Vout 80/40mA SIP
可用性
库存:
33
订购:
2016
输入数量:
IXYH30N120C3D1的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$11.63
US$11.63
10
US$10.47
US$104.70
25
US$9.54
US$238.50
50
US$8.71
US$435.50
100
US$8.61
US$861.00
250
US$7.84
US$1 960.00
500
US$7.21
US$3 605.00
1000
US$6.28
US$6 280.00
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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