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SIE812DF-T1-E3

SIE812DF-T1-E3
Mfr. #:
SIE812DF-T1-E3
制造商:
Vishay
描述:
RF Bipolar Transistors MOSFET 40V 60A 125W 2.6mohm @ 10V
生命周期:
制造商新产品。
数据表:
SIE812DF-T1-E3 数据表
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SIE812DF-T1-E3 更多信息
产品属性
属性值
Tags
SIE812, SIE81, SIE8, SIE
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
SiE812DF Series N-Channel 40 V 0.0026 Ohm 125 W Surface Mount Mosfet - PolarPAK
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:60000mA; On Resistance, Rds(on):0.0034ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:2.3V ;RoHS Compliant: Yes
***nell
MOSFET, N, POLAR PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:40V; Current, Id Cont:163A; Resistance, Rds On:0.0026ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.3V; Case Style:PolarPAK; Termination Type:SMD; Operating Temperature Range:-50°C to +150°C; Base Number:812; Current, Idm Pulse:100A; N-channel Gate Charge:52nC; Power Dissipation:125mW; Power, Pd:125W; Resistance, Rds on @ Vgs = 10V:0.0026ohm; Resistance, Rds on @ Vgs = 4.5V:0.0034ohm; Voltage, Rds Measurement:10V; Voltage, Vds Max:40V; Voltage, Vgs th Max:3V; Voltage, Vgs th Min:1.5V
N-Channel PolarPAK® Power MOSFETs
Vishay Siliconix 20V to 75V PolarPAK® Power MOSFETs combine the thermal benefits of a double-sided cooling package with on-resistance down to as low as 1.4mΩ. The double-sided cooling provided by these Vishay Siliconix PolarPAK® Power MOSFETs gives designers a way to reduce system size and cost through better MOSFET thermal performance. These Vishay Siliconix PolarPAK® MOSFETs share the same footprint area as the standard SO-8 yet are twice as thin with a height profile of just 0.8 mm.
型号 制造商 描述 库存 价格
SIE812DF-T1-E3
DISTI # SIE812DF-T1-E3TR-ND		Vishay SiliconixMOSFET N-CH 40V 60A 10-POLARPAK
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$1.8141
SIE812DF-T1-E3
DISTI # SIE812DF-T1-E3		Vishay IntertechnologiesTrans MOSFET N-CH 40V 33A 10-Pin PolarPAK T/R - Tape and Reel (Alt: SIE812DF-T1-E3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$1.7900
  • 6000:$1.6900
  • 12000:$1.5900
  • 18000:$1.5900
  • 30000:$1.4900
SIE812DF-T1-E3
DISTI # 781-SIE812DF-T1-E3		Vishay IntertechnologiesMOSFET 40V 60A 125W 2.6mohm @ 10V
RoHS: Compliant		0
  • 3000:$2.0700
SIE812DF-T1-E3Vishay IntertechnologiesMOSFET 40V 60A 125W 2.6mohm @ 10VAmericas -
    SIE812DF-T1-E3
    DISTI # 1497643    		Vishay Intertechnologies 
    RoHS: Compliant    		0
    • 1:$5.5100
    • 10:$4.5600
    • 100:$3.7500
    • 250:$3.6500
    • 500:$3.3100
    • 1000:$3.2900
    • 3000:$3.2800
    图片 型号 描述
    SIE812DF-T1-E3

    Mfr.#: SIE812DF-T1-E3

    OMO.#: OMO-SIE812DF-T1-E3

    		 MOSFET 40V 60A 125W 2.6mohm @ 10V
    SIE812DF-T1-GE3

    Mfr.#: SIE812DF-T1-GE3

    OMO.#: OMO-SIE812DF-T1-GE3

    		 MOSFET 40V 163A 125W 2.6mohm @ 10V
    SIE812DF-T1-GE3

    Mfr.#: SIE812DF-T1-GE3

    OMO.#: OMO-SIE812DF-T1-GE3-VISHAY

    		 RF Bipolar Transistors MOSFET 40V 163A 125W 2.6mohm @ 10V
    SIE812DF-T1-E3

    Mfr.#: SIE812DF-T1-E3

    OMO.#: OMO-SIE812DF-T1-E3-VISHAY

    		 RF Bipolar Transistors MOSFET 40V 60A 125W 2.6mohm @ 10V
    SIE812DF

    Mfr.#: SIE812DF

    OMO.#: OMO-SIE812DF-1190

    		 全新原装
    可用性
    库存:
    Available
    订购:
    2500
    输入数量:
    SIE812DF-T1-E3的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格（美元）
    数量
    单价
    小计金额
    1
    US$2.24
    US$2.24
    10
    US$2.12
    US$21.23
    100
    US$2.01
    US$201.15
    500
    US$1.90
    US$949.90
    1000
    US$1.79
    US$1 788.00
    从...开始
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