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SQ9407EY-T1_GE3

SQ9407EY-T1_GE3
Mfr. #:
SQ9407EY-T1_GE3
制造商:
Vishay / Siliconix
描述:
MOSFET -60V -4.6A 3.75W AEC-Q101 Qualified
生命周期:
制造商新产品。
数据表:
SQ9407EY-T1_GE3 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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HTML Datasheet:
SQ9407EY-T1_GE3 DatasheetSQ9407EY-T1_GE3 Datasheet (P4-P6)SQ9407EY-T1_GE3 Datasheet (P7-P9)SQ9407EY-T1_GE3 Datasheet (P10)
ECAD Model:
更多信息:
SQ9407EY-T1_GE3 更多信息
产品属性
属性值
制造商：
威世
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
SO-8
通道数：
1 Channel
晶体管极性：
P-通道
Vds - 漏源击穿电压：
60 V
Id - 连续漏极电流：
4.6 A
Rds On - 漏源电阻：
67 mOhms
Vgs th - 栅源阈值电压：
2.5 V
Vgs - 栅源电压：
20 V
Qg - 门电荷：
40 nC
最低工作温度：
- 55 C
最高工作温度：
+ 175 C
Pd - 功耗：
3.75 W
配置：
单身的
频道模式：
增强
资质：
AEC-Q101
商品名：
沟槽场效应晶体管
打包：
卷轴
系列：
质量
晶体管类型：
1 P-Channel
品牌：
威世 / Siliconix
正向跨导 - 最小值：
10 S
秋季时间：
8 ns
产品类别：
MOSFET
上升时间：
13 ns
出厂包装数量：
2500
子类别：
MOSFET
典型关断延迟时间：
36 ns
典型的开启延迟时间：
11 ns
单位重量：
0.008466 oz
Tags
SQ940, SQ94, SQ9
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***el Electronic
Trans MOSFET P-CH 60V 4.6A Automotive 8-Pin SOIC N T/R
***ark
Mosfet, P-Ch, 60V, 4.6A, 175Deg C, 3.75W Rohs Compliant: Yes
***ure Electronics
Single P-Channel 60 V 85 mOhm 3.75 W SMT Automotive Power Mosfet - SC-8
***et
P-CHANNEL 60-V (D-S) 175C MOSFET
***ronik
P-CH 60V 4,6A 85mOhm SO8 SMD RoHSconf
***ark
Mosfet Transistor, N Channel, 10.8 A, 30 V, 0.011 Ohm, 4.5 V, 3 V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 11 Milliohms;ID 10.8A;SO-8;PD 2.5W;VGS +/-20
***eco
Transistor MOSFET N Channel 30 Volt 10.8.6 Amp 8 Pin SOIC
***ure Electronics
Single N-Channel 30 V 14 mOhm 17 nC HEXFET® Power Mosfet - SOIC-8
***S.I.T. Europe - USA - Asia
Small Signal Field-Effect Transistor, 10.8A I(D), 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***nell
MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 10.8A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 3V; Power Dissi
***ure Electronics
DMP4050SSS Series 40 V 4.4 A P-Channel Enhancement Mode Mosfet - SOIC-8
***el Electronic
Dual nano power high-voltage comparator with open-drain output 8-SOIC 0 to 70
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: SO-8 Polarity: P Variants: Enhancement mode Power dissipation: 1.56 W
***icroelectronics
P-channel 60 V, 0.13 Ohm typ., 3 A STripFET F6 Power MOSFET in a SO-8 package
***ure Electronics
P-Channel 60 V 160 mOhm Surface Mount STripFET F6 Power Mosfet SOIC-8
***et
Trans MOSFET P-CH 60V 3A 8-Pin SOIC T/R
***ure Electronics
Si4154DY Series N-Channel 40 V 3.3 mOhm Surface Mount Power Mosfet - SOIC-8
***enic
40V 36A 7.8W 3.3m´Î@10V15A 2.5V@250Ã×A N Channel SOIC-8_150mil MOSFETs ROHS
***ment14 APAC
MOSFET, N-CH, 40V, 36A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Source Voltage Vds:40V; On Resistance
***nell
MOSFET, N-CH, 40V, 36A, SOIC; Transistor Polarity: N Channel; Continuous Drain Current Id: 36A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0027ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 7.8W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)
***ure Electronics
Single N-Channel 30 V 9.5 mOhms Surface Mount Power Mosfet - SOIC-8
***et
Trans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:18200mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.014ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:3V; Power Dissipation, Pd:3W ;RoHS Compliant: Yes
***nell
MOSFET, N CH, 30V, 18.2A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:18.2A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0078ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5.2W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-
***-Wing Technology
VISHAY SI7454DDP-T1-GE3 MOSFET Transistor, N Channel, 21 A, 100 V, 0.027 ohm, 10 V, 1.5 V
***ure Electronics
Single N-Channel 100 V 33 mOhm SMT TrenchFET Power Mosfet - PowerPAK SO-8
***nell
MOSFET, N-CH, 100V, 21A, PP SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.027ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:29.7W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
SQ Automotive Power MOSFETs
Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.
型号 制造商 描述 库存 价格
SQ9407EY-T1-GE3
DISTI # V36:1790_09219191		Vishay IntertechnologiesP-CHANNEL 60-V (D-S) 175C MOSF0
  • 2500000:$0.4227
  • 1250000:$0.4229
  • 250000:$0.4345
  • 25000:$0.4527
  • 2500:$0.4557
SQ9407EY-T1_GE3
DISTI # SQ9407EY-T1_GE3CT-ND		Vishay SiliconixMOSFET P-CHANNEL 60V 4.6A 8SO
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2567In Stock
  • 1000:$0.5029
  • 500:$0.6370
  • 100:$0.7711
  • 10:$0.9890
  • 1:$1.1100
SQ9407EY-T1_GE3
DISTI # SQ9407EY-T1_GE3TR-ND		Vishay SiliconixMOSFET P-CHANNEL 60V 4.6A 8SO
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		On Order
  • 12500:$0.4166
  • 5000:$0.4329
  • 2500:$0.4557
SQ9407EY-T1_GE3
DISTI # SQ9407EY-T1_GE3		Vishay IntertechnologiesTrans MOSFET P-CH 60V 4.6A 8-Pin SO T/R - Tape and Reel (Alt: SQ9407EY-T1_GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.3969
  • 15000:$0.4079
  • 10000:$0.4199
  • 5000:$0.4369
  • 2500:$0.4509
SQ9407EY-T1_GE3
DISTI # SQ9407EY-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 60V 4.6A 8-Pin SO T/R (Alt: SQ9407EY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 25000:€0.3619
  • 15000:€0.3889
  • 10000:€0.4219
  • 5000:€0.4899
  • 2500:€0.7179
SQ9407EY-T1_GE3
DISTI # 781-SQ9407EY-T1_GE3		Vishay IntertechnologiesMOSFET -60V -4.6A 3.75W AEC-Q101 Qualified
RoHS: Compliant		3214
  • 1:$1.0800
  • 10:$0.8920
  • 100:$0.6850
  • 500:$0.5890
  • 1000:$0.4640
  • 2500:$0.4330
  • 5000:$0.4120
  • 10000:$0.4030
SQ9407EY-T1-GE3
DISTI # 781-SQ9407EY-T1-GE3		Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SQ9407EY-T1_GE3
RoHS: Compliant		0
    SQ9407EY-T1-GE3Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SQ9407EY-T1_GE3
    RoHS: Compliant    		Americas -
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      可用性
      库存:
      Available
      订购:
      1986
      输入数量:
      SQ9407EY-T1_GE3的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格（美元）
      数量
      单价
      小计金额
      1
      US$1.08
      US$1.08
      10
      US$0.89
      US$8.92
      100
      US$0.68
      US$68.50
      500
      US$0.59
      US$294.50
      1000
      US$0.46
      US$464.00
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