IRLR8256PBF

IRLR8256PBF
Mfr. #:
IRLR8256PBF
制造商:
Infineon / IR
描述:
MOSFET 25V 1 N-CH HEXFET 5.7mOhms 10nC
生命周期:
制造商新产品。
数据表:
IRLR8256PBF 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRLR8256PBF DatasheetIRLR8256PBF Datasheet (P4-P6)IRLR8256PBF Datasheet (P7-P9)IRLR8256PBF Datasheet (P10-P11)
ECAD Model:
产品属性
属性值
制造商:
英飞凌
产品分类:
MOSFET
RoHS:
Y
技术:
安装方式:
贴片/贴片
包装/案例:
TO-252-3
通道数:
1 Channel
晶体管极性:
N通道
Vds - 漏源击穿电压:
25 V
Id - 连续漏极电流:
81 A
Rds On - 漏源电阻:
8.5 mOhms
Vgs - 栅源电压:
20 V
Qg - 门电荷:
10 nC
Pd - 功耗:
63 W
配置:
单身的
打包:
管子
高度:
2.3 mm
长度:
6.5 mm
晶体管类型:
1 N-Channel
宽度:
6.22 mm
品牌:
英飞凌/红外
产品类别:
MOSFET
出厂包装数量:
3000
子类别:
MOSFET
第 # 部分别名:
SP001568738
单位重量:
0.139332 oz
Tags
IRLR8256, IRLR825, IRLR82, IRLR8, IRLR, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, 25V, 81A, 5.7MOHM, 10 NC QG, LOGIC LEVEL, D-PAK
***ineon SCT
25V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***ment14 APAC
MOSFET, N-CH 25V 81A DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:25V; On Resistance Rds(on):5.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:63W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:81A; Package / Case:D-PAK; Power Dissipation Pd:63W; Power Dissipation Pd:63W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:25V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V
型号 制造商 描述 库存 价格
IRLR8256PBF
DISTI # IRLR8256PBF-ND
Infineon Technologies AGMOSFET N-CH 25V 81A DPAK
RoHS: Compliant
Min Qty: 1125
Container: Tube
Limited Supply - Call
    IRLR8256PBFInternational RectifierPower Field-Effect Transistor, 81A I(D), 25V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
    RoHS: Compliant
    1125
    • 1000:$0.2800
    • 500:$0.2900
    • 100:$0.3000
    • 25:$0.3200
    • 1:$0.3400
    IRLR8256PBF
    DISTI # 942-IRLR8256PBF
    Infineon Technologies AGMOSFET 25V 1 N-CH HEXFET 5.7mOhms 10nC
    RoHS: Compliant
    0
      IRLR8256TRPBF
      DISTI # IRLR8256PBF-GURT
      Infineon Technologies AGN-LogL 25V 81A 63W 0,0057R TO252AA
      RoHS: Compliant
      0
      • 50:€0.2715
      • 100:€0.2315
      • 500:€0.2115
      • 3000:€0.2035
      IRLR8256PBF
      DISTI # 1698303
      Infineon Technologies AGMOSFET, N-CH 25V 81A DPAK
      RoHS: Compliant
      0
      • 1:$1.3200
      • 10:$1.1400
      • 100:$0.8700
      • 500:$0.7690
      • 1000:$0.6570
      IRLR8256PBF
      DISTI # 1698303
      Infineon Technologies AGMOSFET, N-CH 25V 81A DPAK
      RoHS: Compliant
      23
      • 5:£0.6120
      • 25:£0.5530
      • 100:£0.4190
      • 250:£0.3950
      • 500:£0.3710
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      可用性
      库存:
      Available
      订购:
      4000
      输入数量:
      IRLR8256PBF的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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