IPB65R150CFDAATMA1

IPB65R150CFDAATMA1
Mfr. #:
IPB65R150CFDAATMA1
制造商:
Infineon Technologies
描述:
RF Bipolar Transistors MOSFET N-Ch 650V 72A D2PAK-2
生命周期:
制造商新产品。
数据表:
IPB65R150CFDAATMA1 数据表
交货:
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ECAD Model:
更多信息:
IPB65R150CFDAATMA1 更多信息
产品属性
属性值
制造商
英飞凌科技
产品分类
晶体管 - FET、MOSFET - 单
系列
IPB65R150
打包
卷轴
部分别名
IPB65R150CFDA IPB65R150CFDAXT SP000928270
单位重量
0.068654 oz
商品名
酷摩
包装盒
TO-263-3
技术
通道数
1 Channel
晶体管型
1 N-Channel
Id 连续漏极电流
72 A
Vds-漏-源-击穿电压
650 V
Rds-On-Drain-Source-Resistance
150 mOhms
晶体管极性
N通道
Tags
IPB65R150CFDA, IPB65R15, IPB65R1, IPB65, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 650V 22.4A Automotive 3-Pin(2+Tab) D2PAK T/R
***ure Electronics
IPB65R150CFDA Series 650 V 22.4 A CoolMOS CFDA Power Transistor - TO-263-3
***p One Stop Global
650V COOLMOS CFDA POWER TRANSISTOR
***et Europe
MOS Power Transistors HV (>= 200V)
***ronik
N-CH 650V 22,4A 150mOhm TO263-3
***i-Key
MOSFET N-CH TO263-3
***ineon
650V CoolMOS CFDA is Infineon's second generation of market leading automotive qualified high voltage CoolMOS MOSFET. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFDA series provides now also an integrated fast body diode. | Summary of Features: First 650V automotive qualified technology with integrated fast body diode on the market; Limited voltage overshoot during hard commutation self limiting di/dt and dv/dt; Low gate charge value Q g; Low Q rr at repetitive commutation on body diode & lowQ oss; Reduced turn on and turn of delay times; Compliant to AEC Q101 standard | Benefits: Increased safety margin due to higher breakdown voltage; Reduced EMI appearance and easy to design in; Better light load efficiency; Lower switching losses; Higher switching frequency and/or higher duty cycle possible; High quality and reliability | Target Applications: Unidirectional and bidirectional DC-DC converter; Battery charger; HID lighting
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
型号 制造商 描述 库存 价格
IPB65R150CFDAATMA1
DISTI # IPB65R150CFDAATMA1-ND
Infineon Technologies AGMOSFET N-CH TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 1000:$2.6296
IPB65R150CFDAATMA1
DISTI # IPB65R150CFDAATMA1
Infineon Technologies AGMOS Power Transistors HV (>= 200V) - Tape and Reel (Alt: IPB65R150CFDAATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$2.3900
  • 2000:$2.2900
  • 4000:$2.1900
  • 6000:$2.1900
  • 10000:$2.0900
IPB65R150CFDAATMA1
DISTI # SP000928270
Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: SP000928270)
RoHS: Compliant
Min Qty: 1000
Europe - 0
  • 1000:€2.2900
  • 2000:€2.1900
  • 4000:€2.0900
  • 6000:€1.9900
  • 10000:€1.7900
IPB65R150CFDAATMA1
DISTI # 726-IPB65R150CFDAATM
Infineon Technologies AGMOSFET N-Ch 650V 72A D2PAK-2
RoHS: Compliant
0
  • 1:$4.5200
  • 10:$3.8500
  • 100:$3.3300
  • 250:$3.1600
  • 500:$2.8400
  • 1000:$2.4000
图片 型号 描述
IPB65R150CFD

Mfr.#: IPB65R150CFD

OMO.#: OMO-IPB65R150CFD

MOSFET N-Ch 700V 72A D2PAK-2
IPB65R150CFDAATMA1

Mfr.#: IPB65R150CFDAATMA1

OMO.#: OMO-IPB65R150CFDAATMA1

MOSFET N-Ch 650V 72A D2PAK-2
IPB65R150CFDATMA2

Mfr.#: IPB65R150CFDATMA2

OMO.#: OMO-IPB65R150CFDATMA2

MOSFET
IPB65R150CFDATMA1-CUT TAPE

Mfr.#: IPB65R150CFDATMA1-CUT TAPE

OMO.#: OMO-IPB65R150CFDATMA1-CUT-TAPE-1190

全新原装
IPB65R150CFDATMA2

Mfr.#: IPB65R150CFDATMA2

OMO.#: OMO-IPB65R150CFDATMA2-INFINEON-TECHNOLOGIES

HIGH POWER_LEGACY
IPB65R150CFD

Mfr.#: IPB65R150CFD

OMO.#: OMO-IPB65R150CFD-1190

Transistor MOSFET N-CH 700V 22.4A 3-Pin TO-263 T/R (Alt: IPB65R150CFD)
IPB65R150CFDA 65F6150A

Mfr.#: IPB65R150CFDA 65F6150A

OMO.#: OMO-IPB65R150CFDA-65F6150A-1190

全新原装
IPB65R150CFDS

Mfr.#: IPB65R150CFDS

OMO.#: OMO-IPB65R150CFDS-1190

全新原装
IPB65R150CFDAATMA1

Mfr.#: IPB65R150CFDAATMA1

OMO.#: OMO-IPB65R150CFDAATMA1-INFINEON-TECHNOLOGIES

RF Bipolar Transistors MOSFET N-Ch 650V 72A D2PAK-2
IPB65R150CFDATMA1

Mfr.#: IPB65R150CFDATMA1

OMO.#: OMO-IPB65R150CFDATMA1-INFINEON-TECHNOLOGIES

RF Bipolar Transistors MOSFET N-Ch 700V 72A D2PAK-2
可用性
库存:
Available
订购:
5000
输入数量:
IPB65R150CFDAATMA1的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$3.05
US$3.05
10
US$2.90
US$28.99
100
US$2.75
US$274.60
500
US$2.59
US$1 296.75
1000
US$2.44
US$2 440.90
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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