SI2312DS-T1-E3

SI2312DS-T1-E3
Mfr. #:
SI2312DS-T1-E3
制造商:
Vishay Intertechnologies
描述:
MOSFET, FULL REEL, Transistor Polarity:N Channel, Continuous Drain Current Id:4.9A, Drain Source Voltage Vds:20V, On Resistance Rds(on):0.033ohm, Rds(on) Test Voltage Vgs:4.5V, Threshold Voltage
生命周期:
制造商新产品。
数据表:
SI2312DS-T1-E3 数据表
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ECAD Model:
产品属性
属性值
Tags
SI2312DS-T, SI2312D, SI2312, SI231, SI23, SI2
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET; N-Channel; 0.027 Ohms (Typ.) @ 4.5 V, 0.042 Ohms (Typ.) @ 1.8 V; 3.77 A
*** Americas
MOSFET N-CH VDS20V VGS 8V ID4.9A
***nell
MOSFET, N, TO-236; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:4.9A; On State Resistance:0.033ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:0.65V; Case Style:TO-236; Termination Type:SMD
型号 制造商 描述 库存 价格
SI2312DS-T1-E3
DISTI # 06J7575
Vishay IntertechnologiesMOSFET, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:4.9A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.033ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:650mV,Power Dissipation Pd:750mW RoHS Compliant: Yes0
    SI2312DS-T1-E3
    DISTI # 781-SI2312DS-E3
    Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI2312BDS-E3
    RoHS: Compliant
    0
      SI2312DS-T1-E3Vishay Intertechnologies 3
        图片 型号 描述
        SI2312DS

        Mfr.#: SI2312DS

        OMO.#: OMO-SI2312DS-1190

        全新原装
        SI2312DS-T1

        Mfr.#: SI2312DS-T1

        OMO.#: OMO-SI2312DS-T1-1190

        MOSFET RECOMMENDED ALT 781-SI2312BDS-E3
        SI2312DS-T1-E3

        Mfr.#: SI2312DS-T1-E3

        OMO.#: OMO-SI2312DS-T1-E3-1190

        MOSFET, FULL REEL, Transistor Polarity:N Channel, Continuous Drain Current Id:4.9A, Drain Source Voltage Vds:20V, On Resistance Rds(on):0.033ohm, Rds(on) Test Voltage Vgs:4.5V, Threshold Voltage
        SI2312DS-T1-GE3

        Mfr.#: SI2312DS-T1-GE3

        OMO.#: OMO-SI2312DS-T1-GE3-1190

        全新原装
        SI2312DS-T1/C2T0D

        Mfr.#: SI2312DS-T1/C2T0D

        OMO.#: OMO-SI2312DS-T1-C2T0D-1190

        全新原装
        可用性
        库存:
        Available
        订购:
        4000
        输入数量:
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        100
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        500
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