FCPF190N60E

Mfr. #:: FCPF190N60E
制造商:: ON Semiconductor
描述:: MOSFET N-CH 600V TO-220-3
生命周期:: 制造商新产品。
数据表:: FCPF190N60E 数据表
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产品属性
属性值

制造商: 仙童

产品分类: 晶体管 - FET、MOSFET - 单

打包: 管子

单位重量: 0.080072 oz

安装方式: 通孔

包装盒: TO-220-3

技术: 硅

通道数: 1 Channel

晶体管型: 1 N-Channel

钯功耗: 39 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 40 ns

上升时间: 38 ns

Id 连续漏极电流: 20.6 A

Vds-漏-源-击穿电压: 650 V

VGS-th-Gate-Source-Threshold-Voltage: 3.5 V

Rds-On-Drain-Source-Resistance: 190 mOhms

晶体管极性: N通道

典型关断延迟时间: 212 ns

典型开启延迟时间: 56 ns

Qg-门电荷: 82 nC

正向跨导最小值: 20 S

Tags: FCPF190N60E, FCPF190N60, FCPF19, FCPF1, FCPF, FCP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FCPF190N60E 描述

***Semiconductor: N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 20.6 A, 190 mΩ, TO-220F

***p One Stop Global: Trans MOSFET N-CH 600V 20.6A 3-Pin(3+Tab) TO-220F Tube

***Components: MOSFET N-Ch 600V 20A SuperFET-II TO220F

***ark: MOSFET, N-CH, 600V, 20.6A, TO-220F

***ure Electronics: SuperFET2, 190mohm, Slow ver, TO220F, SG

***i-Key: MOSFET N-CH 600V TO-220-3

***nell: MOSFET, N-CH, 600V, 20.6A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:20.6A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.16ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:39W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C

***ment14 APAC: MOSFET, N-CH, 600V, 20.6A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:20.6A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.16ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:39W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C

***rchild Semiconductor: SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Market price

型号	制造商	描述	库存	价格
FCPF190N60E DISTI # FCPF190N60EOS-ND	ON Semiconductor	MOSFET N-CH 600V TO-220-3 RoHS: Compliant Min Qty: 1 Container: Tube	1000In Stock	1000:$1.4993 500:$1.7929 100:$2.2824 10:$2.8210 1:$3.1100
FCPF190N60E DISTI # FCPF190N60E	ON Semiconductor	Trans MOSFET N-CH 600V 20.6A 3-Pin(3+Tab) TO-220F Rail - Bulk (Alt: FCPF190N60E) Min Qty: 196 Container: Bulk	Americas - 0	196:$1.7900 198:$1.6900 394:$1.6900 980:$1.6900 1960:$1.6900
FCPF190N60E DISTI # FCPF190N60E	ON Semiconductor	Trans MOSFET N-CH 600V 20.6A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube (Alt: FCPF190N60E) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	1000:$1.1629 2000:$1.1549 4000:$1.1399 6000:$1.1259 10000:$1.0979
FCPF190N60E DISTI # 55W4067	ON Semiconductor	Power MOSFET, N Channel, 20.6 A, 600 V, 0.16 ohm, 10 V, 2.5 V RoHS Compliant: Yes	395	1:$1.8300
FCPF190N60E DISTI # 512-FCPF190N60E	ON Semiconductor	MOSFET 600V N-CHAN MOSFET RoHS: Compliant	990	1:$2.6100 10:$2.2200 100:$1.7700 500:$1.5500 1000:$1.2900 2000:$1.2000 5000:$1.1500
FCPF190N60E-F152 DISTI # 512-FCPF190N60E_F152	ON Semiconductor	MOSFET 650V, 190mOhm SuperFET II MOSFET RoHS: Compliant	0
FCPF190N60E	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET RoHS: Compliant	24	1000:$1.3800 500:$1.4500 100:$1.5100 25:$1.5800 1:$1.7000
FCPF190N60E	Fairchild Semiconductor Corporation		475
FCPF190N60E DISTI # 2254239	ON Semiconductor	MOSFET, N-CH, 600V, 20.6A, TO-220F RoHS: Compliant	985	100:£2.1600 10:£2.4900 1:£3.3000
FCPF190N60E DISTI # 2254239	ON Semiconductor	MOSFET, N-CH, 600V, 20.6A, TO-220F RoHS: Compliant	395	1000:$2.4300 500:$2.8800 250:$3.2100 100:$3.3900 10:$3.9000 1:$4.6000

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