SI4408DY-T1-E3

SI4408DY-T1-E3
Mfr. #:
SI4408DY-T1-E3
制造商:
Vishay
描述:
MOSFET N-CH 20V 14A 8-SOIC
生命周期:
制造商新产品。
数据表:
SI4408DY-T1-E3 数据表
交货:
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ECAD Model:
更多信息:
SI4408DY-T1-E3 更多信息
产品属性
属性值
制造商
10VISHAY
产品分类
FET - 单
打包
卷轴
部分别名
SI4408DY-E3
单位重量
0.017870 oz
安装方式
贴片/贴片
包装盒
SO-8
技术
通道数
1 Channel
配置
单身的
晶体管型
1 N-Channel
钯功耗
3.5 W
最高工作温度
+ 150 C
最低工作温度
- 55 C
秋季时间
26 ns
上升时间
42 ns
VGS-栅极-源极-电压
20 V
Id 连续漏极电流
21 A
Vds-漏-源-击穿电压
20 V
Rds-On-Drain-Source-Resistance
4.5 mOhms
晶体管极性
N通道
典型关断延迟时间
60 ns
典型开启延迟时间
42 ns
正向跨导最小值
60 S
通道模式
增强
Tags
SI4408, Si440, SI44, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 20 V 0.0045 Ohms Surface Mount Power Mosfet - SOIC-8
*** Source Electronics
Trans MOSFET N-CH 20V 14A 8-Pin SOIC N T/R / MOSFET N-CH 20V 14A 8-SOIC
***ied Electronics & Automation
MOSFET, Power,N-Ch,VDSS 20V,RDS(ON) 0.0035Ohm,ID 14A,SO-8,PD 1.6W,VGS+/-20V,-55C
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:21A; On Resistance Rds(On):0.0045Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Product Range:-Rohs Compliant: Yes
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
型号 制造商 描述 库存 价格
SI4408DY-T1-E3
DISTI # V72:2272_09215561
Vishay IntertechnologiesTrans MOSFET N-CH 20V 14A 8-Pin SOIC N T/R
RoHS: Compliant
1028
  • 1000:$1.6019
  • 500:$1.6290
  • 250:$1.6550
  • 100:$1.6820
  • 25:$1.8800
  • 10:$2.0890
  • 1:$2.5531
SI4408DY-T1-E3
DISTI # V36:1790_09215561
Vishay IntertechnologiesTrans MOSFET N-CH 20V 14A 8-Pin SOIC N T/R
RoHS: Compliant
0
    SI4408DY-T1-E3
    DISTI # SI4408DY-T1-E3CT-ND
    Vishay SiliconixMOSFET N-CH 20V 14A 8-SOIC
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    4987In Stock
    • 1000:$1.1465
    • 500:$1.3837
    • 100:$1.6842
    • 10:$2.0950
    • 1:$2.3300
    SI4408DY-T1-E3
    DISTI # SI4408DY-T1-E3DKR-ND
    Vishay SiliconixMOSFET N-CH 20V 14A 8-SOIC
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    4987In Stock
    • 1000:$1.1465
    • 500:$1.3837
    • 100:$1.6842
    • 10:$2.0950
    • 1:$2.3300
    SI4408DY-T1-E3
    DISTI # SI4408DY-T1-E3TR-ND
    Vishay SiliconixMOSFET N-CH 20V 14A 8-SOIC
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)
    2500In Stock
    • 5000:$1.0235
    • 2500:$1.0363
    SI4408DY-T1-E3
    DISTI # 25789846
    Vishay IntertechnologiesTrans MOSFET N-CH 20V 14A 8-Pin SOIC N T/R
    RoHS: Compliant
    1028
    • 1000:$1.7220
    • 500:$1.8264
    • 250:$1.9296
    • 100:$1.9769
    • 25:$2.3628
    • 10:$2.3779
    • 5:$2.8439
    SI4408DY-T1-E3
    DISTI # SI4408DY-T1-E3
    Vishay IntertechnologiesTrans MOSFET N-CH 20V 14A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4408DY-T1-E3)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel
    Americas - 0
    • 25000:$1.5385
    • 15000:$1.5810
    • 10000:$1.6260
    • 5000:$1.6949
    • 2500:$1.7467
    SI4408DY-T1-E3
    DISTI # 85W2147
    Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.0035ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,Power Dissipation Pd:3.5W,No. of Pins:8Pins RoHS Compliant: Yes0
    • 500:$1.8900
    • 250:$2.3800
    • 100:$2.7400
    • 50:$3.0300
    • 25:$3.3000
    • 10:$3.5100
    • 1:$3.7500
    SI4408DY-T1-E3
    DISTI # 06J7685
    Vishay IntertechnologiesN CHANNEL MOSFET, 20V, 21A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.0045ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,Product Range:- RoHS Compliant: Yes0
    • 20000:$1.4800
    • 12000:$1.5000
    • 8000:$1.5600
    • 4000:$1.6800
    • 2000:$1.8000
    • 1:$1.8900
    SI4408DY-T1-E3.
    DISTI # 15AC4254
    Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.0045ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,Power Dissipation Pd:1.6W,No. of Pins:8Pins RoHS Compliant: Yes0
    • 20000:$1.4800
    • 12000:$1.5000
    • 8000:$1.5600
    • 4000:$1.6800
    • 2000:$1.8000
    • 1:$1.8900
    SI4408DY-T1-E3
    DISTI # 70026107
    Vishay SiliconixMOSFET,Power,N-Ch,VDSS 20V,RDS(ON) 0.0035Ohm,ID 14A,SO-8,PD 1.6W,VGS +/-20V,-55
    RoHS: Compliant
    0
    • 2500:$2.5160
    SI4408DY-T1-E3
    DISTI # 781-SI4408DY-T1-E3
    Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI4114DY-E3
    RoHS: Compliant
    4943
    • 1:$2.9700
    • 10:$2.4600
    • 100:$2.0300
    • 250:$1.9600
    SI4408DY-T1
    DISTI # 781-SI4408DY-T1
    Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI4114DY-E3
    RoHS: Compliant
    0
      SI4408DY-E3
      DISTI # 781-SI4408DY-E3
      Vishay IntertechnologiesMOSFET 20V 21A 3.5W
      RoHS: Compliant
      0
        SI4408DY-T1-E3Vishay Intertechnologies 2700
          SI4408DY-T1-E3Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI4114DY-E3Americas -
            图片 型号 描述
            SI4408DY-T1-E3

            Mfr.#: SI4408DY-T1-E3

            OMO.#: OMO-SI4408DY-T1-E3

            MOSFET RECOMMENDED ALT 781-SI4114DY-E3
            SI4408DY-T1-GE3

            Mfr.#: SI4408DY-T1-GE3

            OMO.#: OMO-SI4408DY-T1-GE3

            MOSFET 20V 21A 3.5W 4.5mohm @ 10V
            SI4408DY-T1-GE3

            Mfr.#: SI4408DY-T1-GE3

            OMO.#: OMO-SI4408DY-T1-GE3-VISHAY

            RF Bipolar Transistors MOSFET 20V 21A 3.5W 4.5mohm @ 10V
            SI4408DY-T1-E3

            Mfr.#: SI4408DY-T1-E3

            OMO.#: OMO-SI4408DY-T1-E3-VISHAY

            MOSFET N-CH 20V 14A 8-SOIC
            SI4408DY

            Mfr.#: SI4408DY

            OMO.#: OMO-SI4408DY-1190

            MOSFET 20V 21A 3.5W
            可用性
            库存:
            Available
            订购:
            3000
            输入数量:
            SI4408DY-T1-E3的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
            参考价格(美元)
            数量
            单价
            小计金额
            1
            US$1.54
            US$1.54
            10
            US$1.46
            US$14.58
            100
            US$1.38
            US$138.18
            500
            US$1.30
            US$652.50
            1000
            US$1.23
            US$1 228.20
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