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SGF80N60UFTU

SGF80N60UFTU
Mfr. #:
SGF80N60UFTU
制造商:
ON Semiconductor / Fairchild
描述:
IGBT Transistors Discrete Hi-P IGBT
生命周期:
制造商新产品。
数据表:
SGF80N60UFTU 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商：
安森美半导体
产品分类：
IGBT晶体管
RoHS：
Y
技术：
硅
包装/案例：
TO-3PF-3
安装方式：
通孔
配置：
单身的
集电极-发射极电压 VCEO 最大值：
600 V
最大栅极发射极电压：
20 V
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
系列：
SGF80N60UF
打包：
管子
连续集电极电流 Ic 最大值：
80 A
高度：
16.7 mm
长度：
15.7 mm
宽度：
5.7 mm
品牌：
安森美半导体/飞兆半导体
产品类别：
IGBT晶体管
出厂包装数量：
360
子类别：
IGBT
单位重量：
0.245577 oz
Tags
SGF80, SGF8, SGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-3PF Rail
***r Electronics
Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel
***emi
Discrete, High Performance IGBT
*** Electronic Components
IGBT Transistors Discrete Hi-P IGBT
***nell
SGF80N60UFTU, SINGLE BIPOLAR TRANSISTORS;
***rchild Semiconductor
Fairchild's Insulated Gate Bipolar Transistor(IGBT) UF series provides low conduction and switching losses. UF series is designed for the applications such as motor control and general inverters where High Speed Switching is required.
***ical
Trans IGBT Chip N-CH 600V 40A 100000mW 3-Pin(3+Tab) TO-3PF Rail
***el Electronic
FAIRCHILD SEMICONDUCTOR FGAF40N60UFTU IGBT Single Transistor, General Purpose, 40 A, 600 V, 100 W, 600 V, TO-3PF, 3 Pins
***nell
IGBT,N CH,FAST W/DIO,600V,40A,TO-3PF; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-3PF; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:100W
***th Star Micro
Fairchild's UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Product Highlights: High speed switching Low saturation voltage : VCE(sat) = 2.3 V @ IC = 20A High input impedance
***ical
Trans IGBT Chip N=-CH 600V 40A 100000mW 3-Pin(3+Tab) TO-3PF Rail
***hard Electronics
FAIRCHILD SEMICONDUCTOR FGAF40N60UFDTU IGBT Single Transistor, General Purpose, 40 A, 600 V, 100 W, 600 V, TO-3PF, 3 Pins
***nell
IGBT,N CH,FAST W/DIO,600V,40A,TO-3PF; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-3PF; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:100W
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s Field Stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
***ure Electronics
SGF23N60UF Series 600 V 23 A 75 W Through Hole PT IGBT - TO-3PF
***Yang
Trans IGBT Chip N-CH 600V 23A 3-Pin(3+Tab) TO-3PF Rail - Rail/Tube
***r Electronics
Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel
***i-Key
IGBT ULTRA FAST 600V 12A TO-3PF
***ark
Ptpigbt To3Pf 12A 600V Rohs Compliant: Yes
***i-Key Marketplace
INSULATED GATE BIPOLAR TRANSISTO
***rchild Semiconductor
Fairchild’s UF series IGBTs provide low conduction and switching losses. UF series is designed for the applications such as general inverters and PFC where High Speed Switching is required feature.
***ical
Trans IGBT Chip N=-CH 1500V 10A 62500mW 3-Pin(3+Tab) TO-3PF Rail
***nell
IGBT, 1.5KV, 10A, 150DEG C, 62.5W; Available until stocks are exhausted
***rchild Semiconductor
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. SGF5N150UF is designed for the switching power supply applications.
型号 制造商 描述 库存 价格
SGF80N60UFTU
DISTI # 26885511		ON SemiconductorTrans IGBT Chip N-CH 600V 80A 110000mW 3-Pin(3+Tab) TO-3PF Tube1440
  • 720:$5.2985
  • 360:$5.4641
SGF80N60UFTU
DISTI # SGF80N60UFTU-ND		ON SemiconductorIGBT 600V 80A 110W TO3PF
RoHS: Compliant
Min Qty: 360
Container: Tube		Limited Supply - Call
  • 360:$4.6496
SGF80N60UFTU
DISTI # SGF80N60UFTU		ON SemiconductorTrans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-3PF Rail - Rail/Tube (Alt: SGF80N60UFTU)
RoHS: Compliant
Min Qty: 360
Container: Tube		Americas - 0
  • 360:$3.0900
  • 720:$2.9900
  • 1440:$2.9900
  • 2160:$2.9900
  • 3600:$2.8900
SGF80N60UFTU
DISTI # SGF80N60UFTU		ON SemiconductorTrans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-3PF Rail (Alt: SGF80N60UFTU)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€4.0900
  • 10:€3.2900
  • 25:€3.1900
  • 50:€2.9900
  • 100:€2.8900
  • 500:€2.8900
  • 1000:€2.7900
SGF80N60UFTU
DISTI # 512-SGF80N60UFTU		ON SemiconductorIGBT Transistors Discrete Hi-P IGBT
RoHS: Compliant		0
    SGF80N60UFTUFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel
    RoHS: Compliant    		23040
    • 1000:$5.5600
    • 500:$5.8500
    • 100:$6.0900
    • 25:$6.3500
    • 1:$6.8400
    图片 型号 描述
    SGF80N60UFTU

    Mfr.#: SGF80N60UFTU

    OMO.#: OMO-SGF80N60UFTU

    		 IGBT Transistors Discrete Hi-P IGBT
    SGF80N60UF

    Mfr.#: SGF80N60UF

    OMO.#: OMO-SGF80N60UF-1190

    		 全新原装
    SGF80N60UF G80N60UF

    Mfr.#: SGF80N60UF G80N60UF

    OMO.#: OMO-SGF80N60UF-G80N60UF-1190

    		 全新原装
    SGF80N60UFTUPBF

    Mfr.#: SGF80N60UFTUPBF

    OMO.#: OMO-SGF80N60UFTUPBF-1190

    		 全新原装
    SGF80N60UFTU

    Mfr.#: SGF80N60UFTU

    OMO.#: OMO-SGF80N60UFTU-ON-SEMICONDUCTOR

    		 IGBT Transistors Discrete Hi-P IGBT
    可用性
    库存:
    Available
    订购:
    4000
    输入数量:
    SGF80N60UFTU的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格（美元）
    数量
    单价
    小计金额
    360
    US$4.42
    US$1 591.20
    720
    US$4.03
    US$2 901.60
    1080
    US$3.51
    US$3 790.80
    2520
    US$3.38
    US$8 517.60
    由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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