GS78116AGB-12

GS78116AGB-12
Mfr. #:
GS78116AGB-12
制造商:
GSI Technology
描述:
SRAM 3.3V 512K x 16 8M C Temp
生命周期:
制造商新产品。
数据表:
GS78116AGB-12 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商:
GSI技术
产品分类:
静态随机存取存储器
RoHS:
Y
内存大小:
8 Mbit
组织:
512 k x 16
访问时间:
12 ns
接口类型:
平行线
电源电压 - 最大值:
3.6 V
电源电压 - 最小值:
3 V
电源电流 - 最大值:
115 mA
最低工作温度:
0 C
最高工作温度:
+ 70 C
安装方式:
贴片/贴片
包装/案例:
BGA-119
内存类型:
特别提款权
系列:
GS78116AGB
类型:
异步SRAM
品牌:
GSI技术
湿气敏感:
是的
产品类别:
静态随机存取存储器
出厂包装数量:
21
子类别:
内存和数据存储
Tags
GS78116AGB-1, GS78116AG, GS78116A, GS7811, GS781, GS78, GS7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
SRAM Chip Async Single 3.3V 8M-Bit 512K x 16 12ns 119-Pin F-BGA Tray
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OMO.#: OMO-ISPPAC-POWR1014-01TN48I

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Mfr.#: ADR421ARZ-REEL7

OMO.#: OMO-ADR421ARZ-REEL7

Voltage References Low Noise 2.500V Ultraprecision
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Mfr.#: LT3010EMS8E#PBF

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Mfr.#: VNI4140KTR

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Mfr.#: ISPPAC-POWR1014-01TN48I

OMO.#: OMO-ISPPAC-POWR1014-01TN48I-LATTICE-SEMICONDUCTOR

Supervisory Circuits Prec. Prog. Pwr Sppl y Seq. Mon. Trim I
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Mfr.#: ADR421ARZ-REEL7

OMO.#: OMO-ADR421ARZ-REEL7-ANALOG-DEVICES-INC-ADI

Voltage References Low Noise 2.500V Ultraprecision
可用性
库存:
Available
订购:
5000
输入数量:
GS78116AGB-12的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$28.38
US$28.38
25
US$26.36
US$659.00
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