CSD13303W1015

Mfr. #:: CSD13303W1015
描述:: Trans MOSFET N-CH 12V 3.5A 6-Pin DSBGA T/R
生命周期:: 制造商新产品。
数据表:: CSD13303W1015 数据表
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更多信息:: CSD13303W1015 更多信息 CSD13303W1015 Product Details

产品属性
属性值

制造商: 德州仪器

产品分类: 晶体管 - FET、MOSFET - 单

系列: CSD13303W1015

打包: 卷轴

单位重量: 0.000060 oz

安装方式: 贴片/贴片

商品名: 场效应管

包装盒: DSBGA-6

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 N-Channel

钯功耗: 1.65 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 3.2 ns

上升时间: 10 ns

VGS-栅极-源极-电压: 8 V

Id 连续漏极电流: 3.5 A

Vds-漏-源-击穿电压: 12 V

VGS-th-Gate-Source-Threshold-Voltage: 850 mV

Rds-On-Drain-Source-Resistance: 20 mOhms

晶体管极性: N通道

典型关断延迟时间: 14.7 ns

典型开启延迟时间: 4.6 ns

Qg-门电荷: 3.9 nC

正向跨导最小值: 14 S

Tags: CSD1330, CSD133, CSD13, CSD1, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD13303W1015 描述

***as Instruments: 12V, N ch NexFET MOSFET™, single WLP 1.0x1.5, 20mOhm 6-DSBGA -55 to 150

***p One Stop Global: Trans MOSFET N-CH 12V 3.5A 6-Pin DSBGA T/R

***Components: MOSFET N-Channel 12V 3.5A NexFET DSBGA6

***i-Key: MOSFET N-CH 12V 31A 6DSBGA

***ark: 12V N Ch Mosfet

CSD13303W1015 更多信息

NexFET N-Channel Power MOSFETs: OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

型号	描述	库存	价格
CSD13303W1015 DISTI # V98:2334_07248715	Trans MOSFET N-CH 12V 3.5A 6-Pin DSBGA T/R RoHS: Compliant	2960	1000:$0.2009 500:$0.2560 250:$0.2562 100:$0.2565 25:$0.3621 10:$0.4023 1:$0.4782
CSD13303W1015 DISTI # 296-39990-1-ND	MOSFET N-CH 12V 31A 6DSBGA RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	9490In Stock	1000:$0.2331 500:$0.3016 100:$0.4113 10:$0.5480 1:$0.6500
CSD13303W1015 DISTI # 296-39990-6-ND	MOSFET N-CH 12V 31A 6DSBGA RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	9490In Stock	1000:$0.2331 500:$0.3016 100:$0.4113 10:$0.5480 1:$0.6500
CSD13303W1015 DISTI # 296-39990-2-ND	MOSFET N-CH 12V 31A 6DSBGA RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	15000:$0.1797 6000:$0.1930 3000:$0.2063
CSD13303W1015 DISTI # 25824742	Trans MOSFET N-CH 12V 3.5A 6-Pin DSBGA T/R RoHS: Compliant	2960	1000:$0.2009 500:$0.2560 250:$0.2562 100:$0.2565 42:$0.3621
CSD13303W1015 DISTI # CSD13303W1015	Trans MOSFET N-CH 12V 3.5A 6-Pin DSBGA T/R (Alt: CSD13303W1015) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
CSD13303W1015 DISTI # CSD13303W1015	Trans MOSFET N-CH 12V 3.5A 6-Pin DSBGA T/R - Tape and Reel (Alt: CSD13303W1015) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.1749 6000:$0.1669 12000:$0.1609 18000:$0.1559 30000:$0.1509
CSD13303W1015	N-Channel NexFET&#153,Power MOSFET	5945	1000:$0.1400 750:$0.1500 500:$0.1900 250:$0.2400 100:$0.2600 25:$0.3000 10:$0.3200 1:$0.3600
CSD13303W1015 DISTI # 595-CSD13303W1015	MOSFET N-CH NexFET Pwr MOSFET RoHS: Compliant	5874	1:$0.5300 10:$0.4400 100:$0.2670 1000:$0.2060 3000:$0.1760
CSD13303W1015 DISTI # C1S746203268598	Trans MOSFET N-CH 12V 3.5A 6-Pin DSBGA T/R RoHS: Compliant	2960	250:$0.2562 100:$0.2565 25:$0.3621 10:$0.4023

图片	型号	描述
	Mfr.#: CSD13383F4 OMO.#: OMO-CSD13383F4	MOSFET CSD13383F4 12-V Ncha MOSFET 3-PICOSTAR
	Mfr.#: CSD13306WT OMO.#: OMO-CSD13306WT	MOSFET 12V N-Channel NexFET Power MOSFET
	Mfr.#: CSD13302WT OMO.#: OMO-CSD13302WT-TEXAS-INSTRUMENTS	MOSFET N-CH 12V 1.6A 4-DSBGA
	Mfr.#: CSD13382F4 OMO.#: OMO-CSD13382F4-TEXAS-INSTRUMENTS	全新原装
	Mfr.#: CSD13383F4TI OMO.#: OMO-CSD13383F4TI-TEXAS-INSTRUMENTS	全新原装
	Mfr.#: CSD13385F5T OMO.#: OMO-CSD13385F5T-TEXAS-INSTRUMENTS	12V N-CHANNEL NEXFET POWER MOSFE
	Mfr.#: CSD13306WT OMO.#: OMO-CSD13306WT-TEXAS-INSTRUMENTS	MOSFET N-CH 12V 6DSBGA
	Mfr.#: CSD13381F4T OMO.#: OMO-CSD13381F4T-TEXAS-INSTRUMENTS	IGBT Transistors MOSFET 12V,N-Ch FemtoFET MOSFET
	Mfr.#: CSD13380F3 OMO.#: OMO-CSD13380F3-TEXAS-INSTRUMENTS	Trans MOSFET N-CH 12V 3.6A 3-Pin PicoStar T/R
	Mfr.#: CSD13381F4 OMO.#: OMO-CSD13381F4-TEXAS-INSTRUMENTS	MOSFET N-CH 12V 2.1A 3PICOSTAR

CSD13303W1015

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes