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| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| BSD816SNL6327HTSA1 DISTI # BSD816SNL6327HTSA1TR-ND | Infineon Technologies AG | MOSFET N-CH 20V 1.4A SOT363 RoHS: Compliant Min Qty: 9000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSD816SNL6327HTSA1 DISTI # BSD816SNL6327HTSA1CT-ND | Infineon Technologies AG | MOSFET N-CH 20V 1.4A SOT363 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| BSD816SNL6327HTSA1 DISTI # BSD816SNL6327HTSA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 20V 1.4A SOT363 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| BSD816SNL6327XT DISTI # BSD816SNL6327HTSA1 | Infineon Technologies AG | Trans MOSFET N-CH 20V 1.4A 6-Pin SOT-363 T/R - Tape and Reel (Alt: BSD816SNL6327HTSA1) RoHS: Compliant Min Qty: 9000 Container: Reel | Americas - 0 | |
| BSD816SNL6327 | Infineon Technologies AG | Small Signal Field-Effect Transistor, 1.4A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 13819 |
|
| BSD816SN L6327 | Infineon Technologies AG | RoHS: Not Compliant | 13000 |
|
| BSD816SN L6327 DISTI # 726-BSD816SNL6327 | Infineon Technologies AG | MOSFET N-Ch 20V 1.4A SOT-365-6 RoHS: Compliant | 0 |
| 图片 | 型号 | 描述 |
|---|---|---|
|
Mfr.#: BSD816SNH6327XTSA1 OMO.#: OMO-BSD816SNH6327XTSA1 |
Bipolar Transistors - BJT SMALL SIGNAL N-CH |
|
Mfr.#: BSD816SN OMO.#: OMO-BSD816SN-1190 |
全新原装 |
|
|
Mfr.#: BSD816SN H6327 OMO.#: OMO-BSD816SN-H6327-1190 |
全新原装 |
|
|
Mfr.#: BSD816SN L6327 OMO.#: OMO-BSD816SN-L6327-1190 |
MOSFET N-Ch 20V 1.4A SOT-365-6 |
|
|
Mfr.#: BSD816SNH6327 OMO.#: OMO-BSD816SNH6327-1190 |
Small Signal Field-Effect Transisto |
|
|
Mfr.#: BSD816SNL6327 OMO.#: OMO-BSD816SNL6327-1190 |
Small Signal Field-Effect Transistor, 1.4A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
Mfr.#: BSD816SNL6327HTSA1 |
MOSFET N-CH 20V 1.4A SOT363 |
|
|
Mfr.#: BSD816SNH6327XTSA1 |
Bipolar Transistors - BJT SMALL SIGNAL N-CH |
