LMG3410R070RWHR

LMG3410R070RWHR
Mfr. #:
LMG3410R070RWHR
描述:
Gate Drivers SMART 70MOHM GAN FET WITH DRIVER
生命周期:
制造商新产品。
数据表:
LMG3410R070RWHR 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
LMG3410R070RWHR 更多信息 LMG3410R070RWHR Product Details
产品属性
属性值
制造商:
德州仪器
产品分类:
栅极驱动器
RoHS:
Y
产品:
MOSFET 栅极驱动器
类型:
同相
安装方式:
贴片/贴片
包装/案例:
VQFN-32
司机人数:
1 Driver
输出数量:
1 Output
输出电流:
40 A
配置:
单身的
上升时间:
15 ns
秋季时间:
4.2 ns
电源电压 - 最小值:
9.5 V
电源电压 - 最大值:
18 V
传播延迟 - 最大值:
20 ns, 36 ns
工作电源电流:
43 mA
最低工作温度:
- 40 C
最高工作温度:
+ 125 C
系列:
LMG3410R070
打包:
卷轴
工作温度范围:
- 40 C to + 125 C
技术:
品牌:
德州仪器
逻辑类型:
CMOS
最大关断延迟时间:
10 ns
最大开启延迟时间:
12 ns
湿气敏感:
是的
产品类别:
栅极驱动器
Rds On - 漏源电阻:
70 mOhms
出厂包装数量:
2000
子类别:
PMIC - 电源管理 IC
Tags
LMG3410, LMG341, LMG34, LMG3, LMG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    E***n
    E***n
    RU

    Ok

    2019-08-26
    E***n
    E***n
    RU

    The order did not arrive. The money hasn't been returned yet. The seller rests with his hands and feet, supposedly here comes. But on order for a month there were no bodybuilding!

    2019-08-08
    C***c
    C***c
    LK

    deliverd but still not tested

    2019-07-06
***AS INSTRUMENTS INC
The LMG341xR070 GaN power stage with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The LMG341x’s inherent advantages over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.
***ASIN
The LMG341xR070 provides a smart alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to simplify design, maximize reliability and optimize the performance of any power supply. Integrated gate drive enables 100V/ns switching with near zero Vds ringing, <100 ns current limiting self-protects against unintended shoot-through events, Overtemperature shutdown prevents thermal runaway, and system interface signals provide self-monitoring capability.
LMG3410R070 600V 70mΩ GaN Power Stage
OMO Electronic LMG3410R070 600V 70mΩ GaN Power Stage with integrated driver and protection offers advantages over silicon MOSFETs. These include ultra-low input and output capacitance. Features include zero reverse recovery reducing switching losses by as much as 80% and low switch node ringing to decreasing EMI.
Gallium Nitride (GaN)
OMO Electronic Gallium Nitride (GaN) solutions deliver high-efficiency, power density, and reliability. The OMO Electronic GaN portfolio consists of controllers, drivers, and regulators that offer reduced power with end-to-end power conversion and 5MHz switching frequencies.
型号 描述 库存 价格
LMG3410R070RWHR
DISTI # 33098322
SMART 70MOHM GANFET WITHDRIVER2000
  • 2000:$19.3471
LMG3410R070RWHR
DISTI # LMG3410R070RWHR-ND
PWR MGMT MOSFET/PWR DRIVER
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2000:$16.5766
LMG3410R070RWHR
DISTI # V39:1801_22606662
SMART 70MOHM GANFET WITHDRIVER0
    LMG3410R070RWHR
    DISTI # LMG3410R070RWHR
    MOSFET Driver 12A 1-OUT Hi/Lo Side Non-Inverse 32-Pin VQFN T/R - Tape and Reel (Alt: LMG3410R070RWHR)
    RoHS: Compliant
    Min Qty: 2000
    Container: Reel
    Americas - 0
    • 20000:$16.4900
    • 12000:$16.8900
    • 8000:$17.4900
    • 4000:$18.0900
    • 2000:$18.9900
    LMG3410R070RWHT
    DISTI # 595-LMG3410R070RWHT
    Gate Drivers SMART 70MOHM GAN FET WITH DRIVER
    RoHS: Compliant
    1260
    • 1:$27.9400
    • 5:$26.7800
    • 10:$25.7700
    • 25:$24.6200
    • 100:$22.0100
    • 250:$21.0000
    LMG3410R070RWHR
    DISTI # 595-LMG3410R070RWHR
    Gate Drivers SMART 70MOHM GAN FET WITH DRIVER
    RoHS: Compliant
    0
    • 2000:$15.7900
    图片 型号 描述
    LMG3410R070RWHR

    Mfr.#: LMG3410R070RWHR

    OMO.#: OMO-LMG3410R070RWHR

    Gate Drivers SMART 70MOHM GAN FET WITH DRIVER
    LMG3410R070RWHR

    Mfr.#: LMG3410R070RWHR

    OMO.#: OMO-LMG3410R070RWHR-TEXAS-INSTRUMENTS

    PWR MGMT MOSFET/PWR DRIVER
    LMG3410R070RWHT

    Mfr.#: LMG3410R070RWHT

    OMO.#: OMO-LMG3410R070RWHT-TEXAS-INSTRUMENTS

    PWR MGMT MOSFET/PWR DRIVER
    LMG3410-HB-EVM

    Mfr.#: LMG3410-HB-EVM

    OMO.#: OMO-LMG3410-HB-EVM-1190

    - Boxed Product (Development Kits) (Alt: LMG3410-HB-EVM)
    可用性
    库存:
    Available
    订购:
    3000
    输入数量:
    LMG3410R070RWHR的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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