RF1S22N10SM

RF1S22N10SM
Mfr. #:
RF1S22N10SM
制造商:
Rochester Electronics, LLC
描述:
Power Field-Effect Transistor, 22A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
生命周期:
制造商新产品。
数据表:
RF1S22N10SM 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
Tags
RF1S2, RF1S, RF1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
型号 制造商 描述 库存 价格
RF1S22N10SM9A
DISTI # 512-RF1S22N10SM9A
ON SemiconductorMOSFET 100V Single
RoHS: Not compliant
0
    RF1S22N10SMHarris SemiconductorPower Field-Effect Transistor, 22A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Not Compliant
    3853
    • 1000:$0.7200
    • 500:$0.7600
    • 100:$0.7900
    • 25:$0.8300
    • 1:$0.8900
    图片 型号 描述
    RF1S22N10SM

    Mfr.#: RF1S22N10SM

    OMO.#: OMO-RF1S22N10SM-1190

    Power Field-Effect Transistor, 22A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RF1S22N10SM9A

    Mfr.#: RF1S22N10SM9A

    OMO.#: OMO-RF1S22N10SM9A-1190

    MOSFET 100V Single
    RF1S23N06LE

    Mfr.#: RF1S23N06LE

    OMO.#: OMO-RF1S23N06LE-1190

    Power Field-Effect Transistor, 23A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
    RF1S23N06LESM

    Mfr.#: RF1S23N06LESM

    OMO.#: OMO-RF1S23N06LESM-1190

    Power Field-Effect Transistor, 23A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RF1S25N06

    Mfr.#: RF1S25N06

    OMO.#: OMO-RF1S25N06-1190

    - Bulk (Alt: RF1S25N06)
    RF1S25N06S3S

    Mfr.#: RF1S25N06S3S

    OMO.#: OMO-RF1S25N06S3S-1190

    全新原装
    RF1S25N06SM

    Mfr.#: RF1S25N06SM

    OMO.#: OMO-RF1S25N06SM-1190

    Power Field-Effect Transistor, 25A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RF1S25N06SM9A

    Mfr.#: RF1S25N06SM9A

    OMO.#: OMO-RF1S25N06SM9A-1190

    Power Field-Effect Transistor, 25A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RF1S25N06SMR4643

    Mfr.#: RF1S25N06SMR4643

    OMO.#: OMO-RF1S25N06SMR4643-1190

    全新原装
    可用性
    库存:
    Available
    订购:
    2500
    输入数量:
    RF1S22N10SM的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格(美元)
    数量
    单价
    小计金额
    1
    US$1.08
    US$1.08
    10
    US$1.03
    US$10.26
    100
    US$0.97
    US$97.20
    500
    US$0.92
    US$459.00
    1000
    US$0.86
    US$864.00
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