GS842Z36CB-250

GS842Z36CB-250
Mfr. #:
GS842Z36CB-250
制造商:
GSI Technology
描述:
SRAM 2.5 or 3.3V 128K x 36 4M
生命周期:
制造商新产品。
数据表:
GS842Z36CB-250 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
GS842Z36CB-250 更多信息
产品属性
属性值
制造商:
GSI技术
产品分类:
静态随机存取存储器
内存大小:
4 Mbit
组织:
128 k x 36
访问时间:
5.5 ns
最大时钟频率:
250 MHz
接口类型:
平行线
电源电压 - 最大值:
3.6 V
电源电压 - 最小值:
2.3 V
电源电流 - 最大值:
155 mA, 195 mA
最低工作温度:
0 C
最高工作温度:
+ 70 C
安装方式:
贴片/贴片
包装/案例:
BGA-119
打包:
托盘
内存类型:
特别提款权
系列:
GS842Z36CB
类型:
NBT 管道/流通
品牌:
GSI技术
湿气敏感:
是的
产品类别:
静态随机存取存储器
出厂包装数量:
84
子类别:
内存和数据存储
商品名:
静态随机存取存储器
Tags
GS842Z36CB-2, GS842Z36CB, GS842Z36C, GS842Z3, GS842, GS84, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***roFlash
SRAM Chip Sync Quad 2.5V/3.3V 4M-Bit 128K x 36 5.5ns/2.5ns 119-Pin F-BGA
*** Services
CoC and 2-years warranty / RFQ for pricing
***ure Electronics
CY62148EV30 Series 4 Mb (512 K x 8) 2.2 - 3.6 V 45 ns Static RAM - VFBGA-36
***eco
SRAM Chip ASynchronous Single 2.5 Volt/3.3 Volt 4M-bit 512K x 8 45ns 36-Pin VFBGA
***nell
STATIC RAM, 4MBIT, 45NS, VFBGA-36
***-Wing Technology
e1 Surface Mount CY62148 Tray ic memory 1MHz 45ns 6mm 20mA
***ponent Stockers USA
512K X 8 STANDARD SRAM 45 ns BGA36
***i-Key
IC SRAM 4MBIT PARALLEL 36VFBGA
***p One Stop Global
SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns 48-Pin VFBGA Tray
***-Wing Technology
e1 Surface Mount CY7C1041 Tray ic memory 100MHz 10ns 8mm 90mA
***ponent Stockers USA
256K X 16 STANDARD SRAM 10 ns PBGA48
***nell
SRAM, 4MB, 256KX16, 3.3V, VFBGA48
***DA Technology Co., Ltd.
Product Description Demo for Development.
***or
IC SRAM 4MBIT PARALLEL 48VFBGA
***S
French Electronic Distributor since 1988
***ment14 APAC
SRAM, 4MB, 256KX16, 3.3V, VFBGA48; Memory Size:4Mbit; Memory Configuration:256K x 16; Access Time:10ns; Supply Voltage Range:3V to 3.6V; Memory Case Style:FBGA; No. of Pins:48; Operating Temperature Range:-40°C to +85°C; SVHC:No SVHC (20-Jun-2011); Frequency:100MHz; Memory Configuration:256K x 16; Memory Size:4Mbit; Memory Type:SRAM; Memory Voltage Vcc:3.3V; Package / Case:FBGA; Supply Voltage Max:3.6V; Supply Voltage Min:3.3V; Termination Type:SMD
***ure Electronics
CY62147EV30 Series 4 Mb (256 K x 16) 2.2 - 3.6 V 45 ns Static RAM - VFBGA-48
***ical
SRAM Chip Async Single 3V 4M-Bit 256K x 16 45ns 48-Pin VFBGA Tray
***ress Semiconductor SCT
Asynchronous SRAM, 4096 Kb Density, 45 ns Speed, VFBGA-48, RoHS
***-Wing Technology
e1 Surface Mount CY62147 Tray ic memory 1MHz 45ns 6mm 20mA
***ponent Stockers USA
256K X 16 STANDARD SRAM 45 ns PBGA48
***i-Key
IC SRAM 4MBIT PARALLEL 48VFBGA
***or
STANDARD SRAM, 256KX16, 45NS PBG
***egrated Device Technology
3.3V 128K x 36 Synchronous Flow-Through SRAM w/3.3V I/O
***NGYU ELECTRONICS
IC SRAM 4.5M PARALLEL 165CABGA
*** Electronic Components
SRAM 4M 3.3V I/O PBSRAM SLOW X
***egrated Device Technology
3.3V 128K x 36 Synchronous Flow-Through SRAM w/3.3V I/O
***NGYU ELECTRONICS
IC SRAM 4.5M PARALLEL 165CABGA
*** Electronic Components
SRAM 4M 3.3V I/O PBSRAM SLOW X
***-Wing Technology
Synchronous Active BALL 3-STATE (Memory Format) Memory 85C 3.465V 4.5Mb 210mA
***egrated Device Technology
3.3V 128K x 36 Synchronous Flow-Through SRAM w/3.3V I/O
***ource
IC SRAM 4.5M PARALLEL 165CABGA
*** Electronic Components
SRAM 4M 3.3V I/O PBSRAM SLOW X
NBT SRAMs
GSI Technology NBT SRAMs are 144Mbit and 288Mbit Synchronous Static SRAMs that allow utilization of all available bus bandwidth. The SRAMs achieve this by eliminating the need to insert deselect cycles when the device is switched from read to write cycles. The devices' simplified interface is designed to use a data bus's maximum bandwidth. Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the input clock. 
图片 型号 描述
GS842Z36CGB-200I

Mfr.#: GS842Z36CGB-200I

OMO.#: OMO-GS842Z36CGB-200I

SRAM 2.5 or 3.3V 128K x 36 4M
GS842Z36CB-100I

Mfr.#: GS842Z36CB-100I

OMO.#: OMO-GS842Z36CB-100I

SRAM 2.5 or 3.3V 128K x 36 4M
GS842Z36CB-166

Mfr.#: GS842Z36CB-166

OMO.#: OMO-GS842Z36CB-166

SRAM 2.5 or 3.3V 128K x 36 4M
GS842Z36CGB-100I

Mfr.#: GS842Z36CGB-100I

OMO.#: OMO-GS842Z36CGB-100I

SRAM 2.5 or 3.3V 128K x 36 4M
GS842Z36CGB-250

Mfr.#: GS842Z36CGB-250

OMO.#: OMO-GS842Z36CGB-250

SRAM 2.5 or 3.3V 128K x 36 4M
GS842Z36CB-200M

Mfr.#: GS842Z36CB-200M

OMO.#: OMO-GS842Z36CB-200M

SRAM 2.5 or 3.3V 128K x 36 4M
GS842Z36CGB-200

Mfr.#: GS842Z36CGB-200

OMO.#: OMO-GS842Z36CGB-200

SRAM 2.5 or 3.3V 128K x 36 4M
GS842Z36CB-250I

Mfr.#: GS842Z36CB-250I

OMO.#: OMO-GS842Z36CB-250I

SRAM 2.5 or 3.3V 128K x 36 4M
GS842Z36AB-100

Mfr.#: GS842Z36AB-100

OMO.#: OMO-GS842Z36AB-100-1190

全新原装
GS842Z36AB100

Mfr.#: GS842Z36AB100

OMO.#: OMO-GS842Z36AB100-1190

全新原装
可用性
库存:
Available
订购:
1500
输入数量:
GS842Z36CB-250的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$7.46
US$7.46
25
US$6.93
US$173.25
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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