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SIHB33N60E-GE3

SIHB33N60E-GE3
Mfr. #:
SIHB33N60E-GE3
制造商:
Vishay / Siliconix
描述:
MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
生命周期:
制造商新产品。
数据表:
SIHB33N60E-GE3 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHB33N60E-GE3 DatasheetSIHB33N60E-GE3 Datasheet (P4-P6)SIHB33N60E-GE3 Datasheet (P7-P9)
ECAD Model:
更多信息:
SIHB33N60E-GE3 更多信息
产品属性
属性值
制造商：
威世
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
TO-263-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
600 V
Id - 连续漏极电流：
33 A
Rds On - 漏源电阻：
99 mOhms
Vgs th - 栅源阈值电压：
4 V
Vgs - 栅源电压：
30 V
Qg - 门电荷：
100 nC
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
Pd - 功耗：
278 W
配置：
单身的
频道模式：
增强
打包：
管子
高度：
4.83 mm
长度：
10.67 mm
系列：
E
宽度：
9.65 mm
品牌：
威世 / Siliconix
秋季时间：
54 ns
产品类别：
MOSFET
上升时间：
60 ns
出厂包装数量：
1000
子类别：
MOSFET
典型关断延迟时间：
99 ns
典型的开启延迟时间：
28 ns
单位重量：
0.050717 oz
Tags
SIHB33, SIHB3, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 33A 3-Pin(2+Tab) D2PAK
***et Europe
Trans MOSFET N-CH 600V 33A 3-Pin D2PAK
***Components
MOSFET 600V 33A E SERIES D2PAK
***ure Electronics
MOSFET 600V 99MOHM@10V 33A N-CH E-SRS
***ark
MOSFET, N CH, 600V, 33A, TO-263-3
***i-Key
MOSFET N-CH 600V 33A TO-263
***ronik
N-CH 600V 99mOhm 33A TO263
***
N-CH 600V T0-263
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
型号 制造商 描述 库存 价格
SIHB33N60E-GE3
DISTI # V99:2348_09218863		Vishay IntertechnologiesTrans MOSFET N-CH 600V 33A 3-Pin(2+Tab) D2PAK
RoHS: Compliant		802
  • 1000:$3.5080
  • 500:$3.8770
  • 250:$3.9920
  • 100:$4.1310
  • 10:$5.0710
  • 1:$6.7793
SIHB33N60E-GE3
DISTI # V36:1790_09218863		Vishay IntertechnologiesTrans MOSFET N-CH 600V 33A 3-Pin(2+Tab) D2PAK
RoHS: Compliant		0
  • 1000:$3.0270
SIHB33N60E-GE3
DISTI # SIHB33N60E-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 33A TO-263
RoHS: Compliant
Min Qty: 1
Container: Bulk		On Order
  • 2500:$3.1002
  • 1000:$3.2634
  • 500:$3.8695
  • 100:$4.5455
  • 10:$5.5480
  • 1:$6.1800
SIHB33N60E-GE3
DISTI # 33725812		Vishay IntertechnologiesTrans MOSFET N-CH 600V 33A 3-Pin(2+Tab) D2PAK
RoHS: Compliant		802
  • 3:$6.7793
SIHB33N60E-GE3
DISTI # 33350541		Vishay IntertechnologiesTrans MOSFET N-CH 600V 33A 3-Pin(2+Tab) D2PAK
RoHS: Compliant		573
  • 21:$3.8000
SIHB33N60E-GE3
DISTI # 29408606		Vishay IntertechnologiesTrans MOSFET N-CH 600V 33A 3-Pin(2+Tab) D2PAK
RoHS: Compliant		126
  • 4:$2.6227
SIHB33N60E-GE3
DISTI # SIHB33N60E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 33A 3-Pin D2PAK - Tape and Reel (Alt: SIHB33N60E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 10000:$2.7900
  • 6000:$2.8900
  • 4000:$2.9900
  • 2000:$3.0900
  • 1000:$3.1900
SIHB33N60E-GE3
DISTI # SIHB33N60E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 33A 3-Pin D2PAK (Alt: SIHB33N60E-GE3)
RoHS: Compliant
Min Qty: 50		Europe - 0
  • 500:€2.2900
  • 300:€2.4900
  • 200:€2.7900
  • 100:€3.3900
  • 50:€4.2900
SIHB33N60E-GE3
DISTI # 68W7037		Vishay IntertechnologiesTrans MOSFET N-CH 600V 33A 3-Pin D2PAK - Bulk (Alt: 68W7037)
RoHS: Not Compliant
Min Qty: 1
Container: Bulk		Americas - 0
  • 1000:$4.6300
  • 500:$4.6400
  • 100:$5.3000
  • 50:$5.6900
  • 25:$6.0600
  • 10:$6.4500
  • 1:$7.7800
SIHB33N60E-GE3
DISTI # 19X1931		Vishay IntertechnologiesPower MOSFET, N Channel, 33 A, 600 V, 0.083 ohm, 10 V, 2 V RoHS Compliant: Yes0
  • 500:$4.1400
  • 100:$4.2800
  • 50:$4.5900
  • 25:$4.9000
  • 10:$5.2000
  • 1:$6.2700
SIHB33N60E-GE3
DISTI # 68W7037		Vishay IntertechnologiesMOSFET, N CHANNEL, 600V, 33A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:33A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.083ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes573
  • 1:$2.4700
  • 10:$2.4700
  • 25:$2.4700
  • 50:$2.4700
  • 100:$2.4700
  • 500:$2.4700
SIHB33N60E-GE3
DISTI # 78-SIHB33N60E-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		0
  • 1:$6.2100
  • 10:$5.1500
  • 100:$4.2300
  • 250:$4.1000
  • 500:$3.6800
  • 1000:$3.1000
  • 2000:$2.9500
SIHB33N60E-E3
DISTI # 78-SIHB33N60E-E3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		0
  • 1000:$3.4600
  • 2000:$3.2900
SIHB33N60E-GE3
DISTI # 2364072		Vishay IntertechnologiesMOSFET, N-CH, 600V, 33A, D2PAK
RoHS: Compliant		0
  • 100:$6.8600
  • 10:$8.3700
  • 1:$9.3100
SIHB33N60E-GE3
DISTI # 2364072		Vishay IntertechnologiesMOSFET, N-CH, 600V, 33A, D2PAK508
  • 100:£3.8400
  • 10:£4.6700
  • 1:£6.2100
SIHB33N60E-GE3
DISTI # TMOSP10873		Vishay IntertechnologiesN-CH 600V 99mOhm 33A TO263
RoHS: Compliant		Stock DE - 0Stock HK - 0Stock US - 0
  • 1000:$2.8800
SIHB33N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		Americas - 1600
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    可用性
    库存:
    Available
    订购:
    4500
    输入数量:
    SIHB33N60E-GE3的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格（美元）
    数量
    单价
    小计金额
    1
    US$6.21
    US$6.21
    10
    US$5.15
    US$51.50
    100
    US$4.23
    US$423.00
    250
    US$4.10
    US$1 025.00
    500
    US$3.68
    US$1 840.00
    1000
    US$3.10
    US$3 100.00
    2000
    US$2.95
    US$5 900.00
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