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If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| IPB26CN10NGATMA1 DISTI # IPB26CN10NGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 100V 35A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| IPB26CN10NGATMA1 DISTI # IPB26CN10NGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 100V 35A 3-Pin TO-263 T/R - Bulk (Alt: IPB26CN10NGATMA1) Min Qty: 642 Container: Bulk | Americas - 0 |
|
| IPB26CN10NGATMA1 DISTI # SP000277692 | Infineon Technologies AG | Trans MOSFET N-CH 100V 35A 3-Pin TO-263 T/R (Alt: SP000277692) RoHS: Compliant Min Qty: 1 Container: Tape and Reel | Europe - 0 |
|
| IPB26CN10N G DISTI # 726-IPB26CN10NG | Infineon Technologies AG | MOSFET N-Ch 100V 35A D2PAK-2 RoHS: Compliant | 0 | |
| IPB26CN10NGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 35A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 15000 |
|
| 图片 | 型号 | 描述 |
|---|---|---|
|
Mfr.#: IPB260N06N3 OMO.#: OMO-IPB260N06N3-1190 |
全新原装 |
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Mfr.#: IPB260N06N3G OMO.#: OMO-IPB260N06N3G-1190 |
Power Field-Effect Transistor, 27A I(D), 60V, 0.0257ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: IPB260N06N3GATMA1 |
MOSFET N-CH 60V 27A TO263-3 |
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Mfr.#: IPB26CN10 OMO.#: OMO-IPB26CN10-1190 |
全新原装 |
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Mfr.#: IPB26CN10N G OMO.#: OMO-IPB26CN10N-G-1190 |
MOSFET N-Ch 100V 35A D2PAK-2 |
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Mfr.#: IPB26CN10NG OMO.#: OMO-IPB26CN10NG-1190 |
全新原装 |
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Mfr.#: IPB26CN10NG,26CN10N OMO.#: OMO-IPB26CN10NG-26CN10N-1190 |
全新原装 |
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Mfr.#: IPB26CN10NGATMA1 |
MOSFET N-CH 100V 35A TO263-3 |
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Mfr.#: IPB26CNE8N G |
MOSFET N-CH 85V 35A TO263-3 |
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Mfr.#: IPB26CNE8NG OMO.#: OMO-IPB26CNE8NG-1190 |
全新原装 |