SI4463BDY-T1-GE3

SI4463BDY-T1-GE3
Mfr. #:
SI4463BDY-T1-GE3
制造商:
Vishay
描述:
RF Bipolar Transistors MOSFET 20V 13.7A 3.0W 11mohm @ 10V
生命周期:
制造商新产品。
数据表:
SI4463BDY-T1-GE3 数据表
交货:
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支付:
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ECAD Model:
更多信息:
SI4463BDY-T1-GE3 更多信息
产品属性
属性值
制造商
威世
产品分类
集成电路芯片
Tags
SI4463BD, SI4463B, SI4463, SI446, SI44, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***nell
P CHANNEL MOSFET, -20V, 13.7A, SOIC
***et
Trans MOSFET P-CH 20V 9.8A 8-Pin SOIC N T/R
***ment14 APAC
P CHANNEL MOSFET, -20V, 13.7A, SOIC; Tra; P CHANNEL MOSFET, -20V, 13.7A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:13.7A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):20mohm; Rds(on) Test Voltage Vgs:-2.5V; Threshold Voltage Vgs Typ:-1.4V
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
型号 制造商 描述 库存 价格
SI4463BDY-T1-GE3
DISTI # SI4463BDY-T1-GE3CT-ND
Vishay SiliconixMOSFET P-CH 20V 9.8A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2490In Stock
  • 1000:$0.7233
  • 500:$0.9162
  • 100:$1.1814
  • 10:$1.4950
  • 1:$1.6900
SI4463BDY-T1-GE3
DISTI # SI4463BDY-T1-GE3DKR-ND
Vishay SiliconixMOSFET P-CH 20V 9.8A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2490In Stock
  • 1000:$0.7233
  • 500:$0.9162
  • 100:$1.1814
  • 10:$1.4950
  • 1:$1.6900
SI4463BDY-T1-GE3
DISTI # SI4463BDY-T1-GE3TR-ND
Vishay SiliconixMOSFET P-CH 20V 9.8A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2500:$0.6554
SI4463BDY-T1-GE3
DISTI # SI4463BDY-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 20V 9.8A 8-Pin SOIC N T/R (Alt: SI4463BDY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Asia - 0
    SI4463BDY-T1-GE3
    DISTI # SI4463BDY-T1-GE3
    Vishay IntertechnologiesTrans MOSFET P-CH 20V 9.8A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4463BDY-T1-GE3)
    RoHS: Not Compliant
    Min Qty: 2500
    Container: Reel
    Americas - 0
    • 2500:$0.6559
    • 5000:$0.6539
    • 10000:$0.6519
    • 15000:$0.6499
    • 25000:$0.6479
    SI4463BDY-T1-GE3
    DISTI # 26R1879
    Vishay IntertechnologiesP CHANNEL MOSFET, -20V, 13.7A, SOIC,Transistor Polarity:P Channel,Continuous Drain Current Id:13.7A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.02ohm,Rds(on) Test Voltage Vgs:-2.5V,Threshold Voltage Vgs:-1.4V RoHS Compliant: Yes0
    • 1:$1.5800
    • 10:$1.3100
    • 25:$1.2100
    • 50:$1.1200
    • 100:$1.0200
    • 250:$0.9530
    • 500:$0.8850
    SI4463BDY-T1-GE3
    DISTI # 15R5028
    Vishay IntertechnologiesP CHANNEL MOSFET, -20V, 13.7A, SOIC,Transistor Polarity:P Channel,Continuous Drain Current Id:13.7A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.02ohm,Rds(on) Test Voltage Vgs:-2.5V,Threshold Voltage Vgs:-1.4V RoHS Compliant: Yes0
    • 1:$0.9580
    • 1000:$0.9010
    • 2000:$0.8550
    • 4000:$0.7700
    • 6000:$0.7410
    • 10000:$0.7130
    SI4463BDY-T1-GE3
    DISTI # 781-SI4463BDY-GE3
    Vishay IntertechnologiesMOSFET 20V 13.7A 3.0W 11mohm @ 10V
    RoHS: Compliant
    2429
    • 1:$1.5800
    • 10:$1.3100
    • 100:$1.0200
    • 500:$0.8850
    • 1000:$0.7340
    • 2500:$0.6830
    图片 型号 描述
    SI4463BDY-T1-E3

    Mfr.#: SI4463BDY-T1-E3

    OMO.#: OMO-SI4463BDY-T1-E3

    MOSFET 20V 13.7A 0.011Ohm
    SI4463BDY-T1-GE3

    Mfr.#: SI4463BDY-T1-GE3

    OMO.#: OMO-SI4463BDY-T1-GE3

    MOSFET 20V 13.7A 3.0W 11mohm @ 10V
    SI4463BDY-T1-GE3

    Mfr.#: SI4463BDY-T1-GE3

    OMO.#: OMO-SI4463BDY-T1-GE3-VISHAY

    RF Bipolar Transistors MOSFET 20V 13.7A 3.0W 11mohm @ 10V
    SI4463BDY-T1-E3-CUT TAPE

    Mfr.#: SI4463BDY-T1-E3-CUT TAPE

    OMO.#: OMO-SI4463BDY-T1-E3-CUT-TAPE-1190

    全新原装
    SI4463BDY-T1-E3

    Mfr.#: SI4463BDY-T1-E3

    OMO.#: OMO-SI4463BDY-T1-E3-VISHAY

    MOSFET P-CH 20V 9.8A 8-SOIC
    SI4463BDY-T1-EJ

    Mfr.#: SI4463BDY-T1-EJ

    OMO.#: OMO-SI4463BDY-T1-EJ-1190

    全新原装
    可用性
    库存:
    Available
    订购:
    1500
    输入数量:
    SI4463BDY-T1-GE3的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格(美元)
    数量
    单价
    小计金额
    1
    US$0.97
    US$0.97
    10
    US$0.92
    US$9.23
    100
    US$0.87
    US$87.47
    500
    US$0.83
    US$413.05
    1000
    US$0.78
    US$777.50
    由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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