IPP60R600P7XKSA1

IPP60R600P7XKSA1
Mfr. #:
IPP60R600P7XKSA1
制造商:
Infineon Technologies
描述:
MOSFET
生命周期:
制造商新产品。
数据表:
IPP60R600P7XKSA1 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
产品属性
属性值
制造商:
英飞凌
产品分类:
MOSFET
RoHS:
Y
技术:
安装方式:
通孔
包装/案例:
TO-220-3
通道数:
1 Channel
晶体管极性:
N通道
Vds - 漏源击穿电压:
600 V
Id - 连续漏极电流:
6 A
Rds On - 漏源电阻:
490 mOhms
Vgs th - 栅源阈值电压:
3 V
Vgs - 栅源电压:
20 V
Qg - 门电荷:
9 nC
最低工作温度:
- 55 C
最高工作温度:
+ 150 C
Pd - 功耗:
30 W
配置:
单身的
频道模式:
增强
商品名:
酷摩
打包:
管子
系列:
CoolMOS P7
晶体管类型:
1 N-Channel
品牌:
英飞凌科技
秋季时间:
19 ns
产品类别:
MOSFET
上升时间:
6 ns
出厂包装数量:
500
子类别:
MOSFET
典型关断延迟时间:
37 ns
典型的开启延迟时间:
7 ns
第 # 部分别名:
IPP60R600P7 SP001606032
单位重量:
0.063493 oz
Tags
IPP60R6, IPP60R, IPP60, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 600 mOhm 9 nC CoolMOS™ Power Mosfet - TO-220-3
***ark
Mosfet, N-Ch, 600V, 6A, To-220; Transistor Polarity:n Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.49Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Rohs Compliant: Yes
***ineon
The 600V CoolMOS P7 is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS 7th generation platform ensure its high efficiency. | Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
型号 制造商 描述 库存 价格
IPP60R600P7XKSA1
DISTI # V99:2348_17076888
Infineon Technologies AGTrans MOSFET N-CH 600V 6A Tube188
  • 1000:$0.6669
  • 500:$0.8305
  • 100:$0.9527
  • 10:$1.2310
  • 1:$1.5800
IPP60R600P7XKSA1
DISTI # IPP60R600P7XKSA1-ND
Infineon Technologies AGMOSFET N-CH 650V 6A TO220-3
RoHS: Compliant
Min Qty: 1
Container: Tube
479In Stock
  • 5000:$0.6210
  • 2500:$0.6537
  • 500:$0.8872
  • 100:$1.0740
  • 25:$1.3076
  • 10:$1.3770
  • 1:$1.5400
IPP60R600P7XKSA1
DISTI # 32925524
Infineon Technologies AGTrans MOSFET N-CH 600V 6A Tube1000
  • 500:$0.5569
IPP60R600P7XKSA1
DISTI # 26198599
Infineon Technologies AGTrans MOSFET N-CH 600V 6A Tube188
  • 1000:$0.6669
  • 500:$0.8305
  • 100:$0.9527
  • 10:$1.2310
IPP60R600P7XKSA1
DISTI # SP001606032
Infineon Technologies AGLOW POWER_NEW (Alt: SP001606032)
RoHS: Compliant
Min Qty: 50
Europe - 490
  • 500:€0.5289
  • 300:€0.5689
  • 200:€0.6169
  • 100:€0.6729
  • 50:€0.8219
IPP60R600P7XKSA1
DISTI # IPP60R600P7XKSA1
Infineon Technologies AGLOW POWER_NEW - Rail/Tube (Alt: IPP60R600P7XKSA1)
RoHS: Compliant
Min Qty: 1000
Container: Tube
Americas - 0
  • 10000:$0.5649
  • 5000:$0.5749
  • 3000:$0.5949
  • 2000:$0.6169
  • 1000:$0.6399
IPP60R600P7XKSA1
DISTI # 34AC1715
Infineon Technologies AGMOSFET, N-CH, 600V, 6A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.49ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power Dissipation RoHS Compliant: Yes170
  • 1000:$0.6750
  • 500:$0.8530
  • 100:$0.9670
  • 10:$1.2500
  • 1:$1.4600
IPP60R600P7XKSA1
DISTI # 726-IPP60R600P7XKSA1
Infineon Technologies AGMOSFET
RoHS: Compliant
1219
  • 1:$1.4500
  • 10:$1.2400
  • 100:$0.9570
  • 500:$0.8450
  • 1000:$0.6680
IPP60R600P7XKSA1
DISTI # 2784033
Infineon Technologies AGMOSFET, N-CH, 600V, 6A, TO-220150
  • 500:£0.6450
  • 250:£0.6880
  • 100:£0.7300
  • 10:£0.9970
  • 1:£1.2600
IPP60R600P7XKSA1
DISTI # 2784033
Infineon Technologies AGMOSFET, N-CH, 600V, 6A, TO-220
RoHS: Compliant
170
  • 5000:$0.9080
  • 1000:$0.9560
  • 500:$1.0200
  • 250:$1.1700
  • 100:$1.3900
  • 25:$1.7100
  • 5:$1.9500
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Mfr.#: NTHL050N65S3HF

OMO.#: OMO-NTHL050N65S3HF

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BSC0504NSIATMA1

Mfr.#: BSC0504NSIATMA1

OMO.#: OMO-BSC0504NSIATMA1

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IPP060N06NAKSA1

Mfr.#: IPP060N06NAKSA1

OMO.#: OMO-IPP060N06NAKSA1

MOSFET N-Ch 60V 45A TO220-3
THVD1500DR

Mfr.#: THVD1500DR

OMO.#: OMO-THVD1500DR

RS-485 Interface IC 5V RS-485 Transceivr up to 300kbps
NUCLEO-F767ZI

Mfr.#: NUCLEO-F767ZI

OMO.#: OMO-NUCLEO-F767ZI

Development Boards & Kits - ARM STM32 Nucleo-144 development board with STM32F767ZI MCU, supports Arduino, ST Zio and morpho connectivity
HRG3216P-1000-B-T1

Mfr.#: HRG3216P-1000-B-T1

OMO.#: OMO-HRG3216P-1000-B-T1-SUSUMU

RES SMD 100 OHM 0.1% 1W 1206
NUCLEO-F767ZI

Mfr.#: NUCLEO-F767ZI

OMO.#: OMO-NUCLEO-F767ZI-STMICROELECTRONICS

STM32F767ZIT6 Microcontroller Development Board 0.032768MHz CPU 2MB Flash
BSC0504NSIATMA1

Mfr.#: BSC0504NSIATMA1

OMO.#: OMO-BSC0504NSIATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 30V 21A TDSON-8
CRF1206-FZ-R010ELF

Mfr.#: CRF1206-FZ-R010ELF

OMO.#: OMO-CRF1206-FZ-R010ELF-BOURNS

RESMETALSTRIP 1206 R010 1% 1W
可用性
库存:
Available
订购:
4000
输入数量:
IPP60R600P7XKSA1的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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