HGTG5N120BND

Mfr. #:: HGTG5N120BND
制造商:: ON Semiconductor
描述:: IGBT Transistors 21a 1200V IGBT NPT Series N-Ch
生命周期:: 制造商新产品。
数据表:: HGTG5N120BND 数据表
交货:: DHL FedEx Ups TNT EMS
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ECAD Model:

产品属性
属性值

制造商: 仙童半导体

产品分类: IGBT - 单

系列: -

打包: 管子

部分别名: HGTG5N120BND_NL

单位重量: 0.225401 oz

安装方式: 通孔

包装盒: TO-247-3

输入类型: 标准

安装型: 通孔

供应商-设备-包: TO-247

配置: 单身的

最大功率: 167W

反向恢复时间trr: 65ns

电流收集器 Ic-Max: 21A

电压收集器发射极击穿最大值: 1200V

IGBT型: 不扩散条约

电流收集器脉冲Icm: 40A

Vce-on-Max-Vge-Ic: 2.7V @ 15V, 5A

开关能源: 450μJ (on), 390μJ (off)

栅极电荷: 53nC

Td-on-off-25°C: 22ns/160ns

测试条件: 960V, 5A, 25 Ohm, 15V

钯功耗: 167 W

最高工作温度: + 150 C

最低工作温度: - 55 C

集电极-发射极-电压-VCEO-Max: 1200 V

集电极-发射极-饱和-电压: 2.45 V

25-C 时的连续集电极电流: 21 A

栅极-发射极-漏电流: +/- 250 nA

最大栅极发射极电压: +/- 20 V

连续集电极电流 Ic-Max: 21 A

Tags: HGTG5N120B, HGTG5, HGTG, HGT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

HGTG5N120BND 描述

***ical: Trans IGBT Chip N-CH 1200V 21A 167000mW 3-Pin(3+Tab) TO-247 Rail

***p One Stop Global: Trans IGBT Chip N-CH 1.2KV 21A 3-Pin(3+Tab) TO-247 Rail

***inecomponents.com: 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes

***et: PWR IGBT 21A 1200V NPT N-CHANNEL W/DIODE TO-247

***ser: IGBTs 21a, 1200V, IGBT NPT Series N-Ch

***i-Key: IGBT NPT N-CH 1200V 21A TO-247

*** Source Electronics: IGBT 1200V 21A 167W TO247

***Semiconductor: 1200V, NPT IGBT

***ark: DC Collector Current:21A; Collector Emitter Saturation Voltage Vce(on):1.2kV; Power Dissipation Pd:167W; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:3Pins; Operating Temperature Max:150�C; Product Range:-; MSL:- RoHS Compliant: Yes

***rchild Semiconductor: HGTG5N120BND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, motor control and power supplies.

***nell: IGBT, 1200V, 21A; Corrente di Collettore CC:21A; Tensione Saturaz Collettore-Emettitore Vce(on):2.7V; Dissipazione di Potenza Pd:167W; Tensione Collettore-Emettitore V(br)ceo:1.2kV; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018); Corrente Ic Continua a Max:21A; Dissipazione di Potenza Max:167W; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Polarità Transistor:Canale N; Temperatura di Esercizio Min:-55°C; Tensione Vces:1.2kV; Tipo di Terminazione:Foro Passante; Tipo di Transistor:No Punch Through (NPT)

Market price

型号	制造商	描述	库存	价格
HGTG5N120BND DISTI # V36:1790_06301349	ON Semiconductor	NPTPIGBT TO247 21A 1200V	0
HGTG5N120BND DISTI # HGTG5N120BNDFS-ND	ON Semiconductor	IGBT 1200V 21A 167W TO247 RoHS: Compliant Min Qty: 1 Container: Tube	235In Stock	1350:$1.4991 900:$1.7775 450:$1.9810 10:$2.5480 1:$2.8400
HGTG5N120BND DISTI # HGTG5N120BND	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 21A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG5N120BND) RoHS: Compliant Min Qty: 1	Europe - 1275	100:€1.0900 500:€1.0900 1000:€1.0900 25:€1.1900 50:€1.1900 10:€1.3900 1:€1.4900
HGTG5N120BND DISTI # HGTG5N120BND	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 21A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG5N120BND) RoHS: Compliant Min Qty: 450 Container: Tube	Americas - 350	450:$1.0900 900:$1.0900 1800:$1.0900 2700:$1.0900 4500:$1.0900
HGTG5N120BND. DISTI # 16AC0006	Fairchild Semiconductor Corporation	DC Collector Current:21A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:167W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,Product Range:-,MSL:- RoHS Compliant: Yes	0	2250:$1.5100 1:$1.6100
HGTG5N120BND DISTI # 512-HGTG5N120BND	ON Semiconductor	IGBT Transistors 21a 1200V IGBT NPT Series N-Ch RoHS: Compliant	0
HGTG5N120BND DISTI # HGTG5N120BND	ON Semiconductor	Transistor: IGBT,1.2kV,10A,167W,TO247-3	94	1:$2.6100 3:$2.3500 10:$2.0800 50:$1.8600
HGTG5N120BND DISTI # XSKDRABV0043248	ON SEMICONDUCTOR	RoHS: Compliant	2700 in Stock0 on Order	2700:$1.6600 450:$1.7800

相关产品

图片	型号	描述
	Mfr.#: HGTG5N120BND OMO.#: OMO-HGTG5N120BND	IGBT Transistors 21a 1200V IGBT NPT Series N-Ch
	Mfr.#: HGTG5N120BND OMO.#: OMO-HGTG5N120BND-ON-SEMICONDUCTOR	IGBT Transistors 21a 1200V IGBT NPT Series N-Ch
	Mfr.#: HGTG5N120BND 5N120BND OMO.#: OMO-HGTG5N120BND-5N120BND-1190	全新原装
	Mfr.#: HGTG5N120BND,G5N120, OMO.#: OMO-HGTG5N120BND-G5N120--1190	全新原装
	Mfr.#: HGTG5N120BND,HGTG10N120B OMO.#: OMO-HGTG5N120BND-HGTG10N120B-1190	全新原装
	Mfr.#: HGTG5N120BND,HGTG10N120BND,10N120BND,5N120BND OMO.#: OMO-HGTG5N120BND-HGTG10N120BND-10N120BND-5N120BND-1190	全新原装
	Mfr.#: HGTG5N120BND,HGTG5N120CN OMO.#: OMO-HGTG5N120BND-HGTG5N120CN-1190	全新原装
	Mfr.#: HGTG5N120BNDAB OMO.#: OMO-HGTG5N120BNDAB-1190	全新原装
	Mfr.#: HGTG5N120BND_NL OMO.#: OMO-HGTG5N120BND-NL-1190	全新原装
	Mfr.#: HGTG5N120CND,5N120CND OMO.#: OMO-HGTG5N120CND-5N120CND-1190	全新原装

可用性

库存:: Available
订购:: 3500
输入数量:

HGTG5N120BND的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]

参考价格（美元）

数量
单价
小计金额

1: ~~US$1.64~~; ~~US$1.64~~

10: ~~US$1.55~~; ~~US$15.53~~

100: ~~US$1.47~~; ~~US$147.15~~

500: ~~US$1.39~~; ~~US$694.90~~

1000: ~~US$1.31~~; ~~US$1 308.00~~

由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。

从...开始

HGTG5N120B 8
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HGTG5N120BND

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes