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IGZ100N65H5XKSA1

IGZ100N65H5XKSA1
Mfr. #:
IGZ100N65H5XKSA1
制造商:
Infineon Technologies
描述:
IGBT Transistors IGBT PRODUCTS
生命周期:
制造商新产品。
数据表:
IGZ100N65H5XKSA1 数据表
交货:
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支付:
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ECAD Model:
更多信息:
IGZ100N65H5XKSA1 更多信息
产品属性
属性值
制造商：
英飞凌
产品分类：
IGBT晶体管
技术：
硅
包装/案例：
TO-247-4
安装方式：
通孔
配置：
单身的
集电极-发射极电压 VCEO 最大值：
650 V
集电极-发射极饱和电压：
1.65 V
最大栅极发射极电压：
20 V
25 C 时的连续集电极电流：
161 A
Pd - 功耗：
536 W
最低工作温度：
- 40 C
最高工作温度：
+ 175 C
系列：
TRENCHSTOP 5 H5
打包：
管子
品牌：
英飞凌科技
栅极-发射极漏电流：
100 nA
产品类别：
IGBT晶体管
出厂包装数量：
240
子类别：
IGBT
商品名：
战壕
第 # 部分别名：
IGZ100N65H5 SP001160058
单位重量：
0.217475 oz
Tags
IGZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 161A 536000mW 4-Pin(4+Tab) TO-247 Tube
***ark
Igbt, Single, 650V, 161A, To-247; Dc Collector Current:161A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:536W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:4Pins; Rohs Compliant: Yes
***ineon
To further enhance the best-in-class performance of the TRENCHSTOP 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control loop and brings TRENCHSTOP 5 IGBT to the next level of best in class switching performance. The standard TO-247 package body has been taken and an extra, 4th pin, has been added to enable the Kelvin emitter configuration. | Summary of Features: Extremely low control inductance loop; Emitter pin for driver feedback; Same creepage distance of collector emitter as standard TO-247 package; 20% reduction in total switching losses compared to TO-247 package using same technology | Benefits: System efficiency improvement compared to standard TO-247; Benefit increase at high current conditions; IGBTs operates under lower junction temperature; Much less power dissipation under overcurrent conditions | Target Applications: Uninterruptible power supply; Datacenters; Telecom Rectifiers; Photovoltaic Inverters; Server
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs
Infineon TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs are high speed and designed with ultimate efficiency for applications switching faster than 30kHz. The High Speed 5 IGBTs feature TRENCHSTOP™ 5 technology and are co-packed with a RAPID 1 fast and soft antiparallel diode. The H5 IGBTs offer best-in-class efficiency in hard switching and resonant topologies and are a plug-and-play replacement for previous generation IGBTs. Typical applications include UPS, welding converters, solar string inverters, and mid to high range switching frequency converters.
型号 制造商 描述 库存 价格
IGZ100N65H5XKSA1
DISTI # V99:2348_06377191		Infineon Technologies AGTrans IGBT Chip N-CH 650V 161A 536000mW 4-Pin(4+Tab) TO-247 Tube0
    IGZ100N65H5XKSA1
    DISTI # V36:1790_06377191    		Infineon Technologies AGTrans IGBT Chip N-CH 650V 161A 536000mW 4-Pin(4+Tab) TO-247 Tube0
    • 240000:$3.4040
    • 120000:$3.4060
    • 24000:$3.6280
    • 2400:$4.0160
    • 240:$4.0800
    IGZ100N65H5XKSA1
    DISTI # IGZ100N65H5XKSA1-ND    		Infineon Technologies AGIGBT 650V 100A SGL TO-247-4
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		205In Stock
    • 720:$4.7557
    • 240:$5.4614
    • 25:$6.2900
    • 10:$6.5970
    • 1:$7.3000
    IGZ100N65H5XKSA1
    DISTI # IGZ100N65H5XKSA1    		Infineon Technologies AGTrans IGBT Chip N-CH 650V 161A 4-Pin TO-247 Tube - Rail/Tube (Alt: IGZ100N65H5XKSA1)
    RoHS: Compliant
    Min Qty: 240
    Container: Tube    		Americas - 0
    • 1440:$3.6900
    • 2400:$3.6900
    • 960:$3.8900
    • 480:$3.9900
    • 240:$4.1900
    IGZ100N65H5XKSA1
    DISTI # IGZ100N65H5XKSA1    		Infineon Technologies AGTrans IGBT Chip N-CH 650V 161A 4-Pin TO-247 Tube - Bulk (Alt: IGZ100N65H5XKSA1)
    RoHS: Compliant
    Min Qty: 100
    Container: Bulk    		Americas - 0
    • 500:$3.1900
    • 1000:$3.1900
    • 300:$3.2900
    • 200:$3.4900
    • 100:$3.5900
    IGZ100N65H5XKSA1
    DISTI # SP001160058    		Infineon Technologies AGTrans IGBT Chip N-CH 650V 161A 4-Pin TO-247 Tube (Alt: SP001160058)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 0
    • 1000:€2.9900
    • 500:€3.1900
    • 100:€3.2900
    • 50:€3.4900
    • 25:€3.5900
    • 10:€3.7900
    • 1:€4.0900
    IGZ100N65H5XKSA1
    DISTI # 49AC0267    		Infineon Technologies AGIGBT, SINGLE, 650V, 161A, TO-247,DC Collector Current:161A,Collector Emitter Saturation Voltage Vce(on):1.65V,Power Dissipation Pd:536W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-247,No. of Pins:4Pins,RoHS Compliant: Yes499
    • 500:$4.5700
    • 250:$5.0100
    • 100:$5.2500
    • 50:$5.6500
    • 25:$6.0500
    • 10:$6.3400
    • 1:$7.0200
    IGZ100N65H5XKSA1
    DISTI # 726-IGZ100N65H5XKSA1    		Infineon Technologies AGIGBT Transistors IGBT PRODUCTS236
    • 1:$6.9500
    • 10:$6.2800
    • 25:$5.9900
    • 100:$5.2000
    • 250:$4.9600
    • 500:$4.5200
    IGZ100N65H5XKSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 161A I(C), 650V V(BR)CES, N-Channel, TO-247
    RoHS: Compliant    		3790
    • 1000:$3.3200
    • 500:$3.4900
    • 100:$3.6300
    • 25:$3.7900
    • 1:$4.0800
    IGZ100N65H5XKSA1
    DISTI # IGZ100N65H5XKSA1    		Infineon Technologies AGTransistor: IGBT,650V,101A,268W,TO247-4,Series: H599
    • 120:$3.5500
    • 30:$3.9500
    • 5:$4.9200
    • 1:$5.7100
    IGZ100N65H5XKSA1
    DISTI # IGZ100N65H5    		Infineon Technologies AG650V 161A 536W TO247-4
    RoHS: Compliant    		240
    • 1:€7.0300
    • 10:€4.0300
    • 50:€3.0300
    • 100:€2.9100
    IGZ100N65H5XKSA1
    DISTI # 2839422    		Infineon Technologies AGIGBT, SINGLE, 650V, 161A, TO-247624
    • 500:£3.5100
    • 250:£3.8600
    • 100:£4.0500
    • 10:£4.6700
    • 1:£5.9300
    IGZ100N65H5XKSA1
    DISTI # 2839422    		Infineon Technologies AGIGBT, SINGLE, 650V, 161A, TO-247
    RoHS: Compliant    		499
    • 1000:$6.1700
    • 500:$6.4800
    • 250:$6.8400
    • 100:$7.2400
    • 10:$8.1700
    • 1:$8.7500
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    OMO.#: OMO-AD629ANZ-ANALOG-DEVICES-INC-ADI

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    可用性
    库存:
    228
    订购:
    2211
    输入数量:
    IGZ100N65H5XKSA1的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格（美元）
    数量
    单价
    小计金额
    1
    US$6.95
    US$6.95
    10
    US$6.28
    US$62.80
    25
    US$5.99
    US$149.75
    100
    US$5.20
    US$520.00
    250
    US$4.96
    US$1 240.00
    500
    US$4.52
    US$2 260.00
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